© Semiconductor Components Industries, LLC, 1994
October, 2017 − Rev. 8 1Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1G,
MMBT6429LT1G,
NSVMMBT6429LT1G
Amplifier Transistors
NPN Silicon
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 6428LT1 6429LT1 Unit
Collector−Emitter Voltage VCEO 50 45 Vdc
Collector−Base Voltage VCBO 60 55 Vdc
Emitter−Base Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC200 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
MMBT6428LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
MMBT6429LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
12
3
1
XXX MG
G
XXX = Specific Device Code
MMBT6428LT1 − 1KM
NSV/MMBT6429LT1 − M1L
M = Date Code*
G= Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
NSVMMBT6429LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
www.onsemi.com
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) MMBT6428
(IC = 1.0 mAdc, IB = 0) MMBT6429 / NSVMMBT6429
V(BR)CEO 50
45 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) MMBT6428
(IC = 0.1 mAdc, IE = 0) MMBT6429 / NSVMMBT6429
V(BR)CBO 60
55 −
−
Vdc
Collector Cutoff Current
(VCE = 30 Vdc) ICES − 0.1 mAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO − 0.01 mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO − 0.01 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
hFE 250
500
250
500
250
500
250
500
−
−
650
1250
−
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat) −
−0.2
0.6
Vdc
Base−Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) 0.56 0.66 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT100 700 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 3.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 8.0 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300 mA
30 mA
RS ≈ 0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS ≈ 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
RS ≈ 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
IC = 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
4
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2
1.00.1 5.0
FE
VCE = 5.0 V
TA = 125°C
25°C
-55°C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.01
0
-0.8
-1.2
-1.6
-2.4
TJ = 25°C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25°C to 125°C
-55°C to 25°C
RVBE, BASE-EMITTER
θ
TEMPERATURE COEFFICIENT (mV/ C)°
-0.4
-2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25°C
Ccb
Cob Ceb Cib
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25°C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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