© Semiconductor Components Industries, LLC, 1994
October, 2017 − Rev. 8 1Publication Order Number:
MMBT6428LT1/D
MMBT6428LT1G,
MMBT6429LT1G,
NSVMMBT6429LT1G
Amplifier Transistors
NPN Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 6428LT1 6429LT1 Unit
CollectorEmitter Voltage VCEO 50 45 Vdc
CollectorBase Voltage VCBO 60 55 Vdc
EmitterBase Voltage VEBO 6.0 Vdc
Collector Current − Continuous IC200 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MMBT6428LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
MMBT6429LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
12
3
1
XXX MG
G
XXX = Specific Device Code
MMBT6428LT1 − 1KM
NSV/MMBT6429LT1 − M1L
M = Date Code*
G= Pb−Free Package
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
NSVMMBT6429LT1G SOT−23
(Pb−Free) 3000 Tape &
Reel
www.onsemi.com
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) MMBT6428
(IC = 1.0 mAdc, IB = 0) MMBT6429 / NSVMMBT6429
V(BR)CEO 50
45
Vdc
CollectorBase Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) MMBT6428
(IC = 0.1 mAdc, IE = 0) MMBT6429 / NSVMMBT6429
V(BR)CBO 60
55
Vdc
Collector Cutoff Current
(VCE = 30 Vdc) ICES 0.1 mAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO 0.01 mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) IEBO 0.01 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.01 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 0.1 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
(IC = 10 mAdc, VCE = 5.0 Vdc) MMBT6428
MMBT6429 / NSVMMBT6429
hFE 250
500
250
500
250
500
250
500
650
1250
CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.6
Vdc
BaseEmitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) 0.56 0.66 Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT100 700 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo 3.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 8.0 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
3
Figure 2. Effects of Frequency
f, FREQUENCY (Hz)
7.0
10
20
30
5.0
Figure 3. Effects of Collector Current
IC, COLLECTOR CURRENT (mA)
Figure 4. Noise Current
f, FREQUENCY (Hz)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (OHMS)
3.0
10
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
NOISE VOLTAGE
en, NOISE VOLTAGE (nV)
en, NOISE VOLTAGE (nV)
In, NOISE CURRENT (pA)
NF, NOISE FIGURE (dB)
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
IC = 10 mA
300 mA
30 mA
RS 0
3.0 mA
1.0 mA 7.0
10
20
30
5.0
3.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
RS 0
f = 10 Hz
100 Hz
1.0 kHz
10 kHz
100 kHz
IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
10 mA
RS 0
10
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0.1
0.2
0.3
1.0
0.7
2.0
3.0
5.0
7.0
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
0
4.0
8.0
12
16
20
BANDWIDTH = 10 Hz to 15.7 kHz
IC = 1.0 mA
500 mA
100 mA
10 mA
100 Hz NOISE DATA
300
200
100
3.0
5.0
7.0
10
20
30
50
70
RS, SOURCE RESISTANCE (OHMS)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
VT, TOTAL NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
0
4.0
8.0
12
16
20
Figure 6. Total Noise Voltage
BANDWIDTH = 1.0 Hz IC = 10 mA
3.0 mA
1.0 mA
300 mA
100 mA
30 mA
10 mA
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
IC = 10 mA
300 mA
100 mA
30 mA
3.0 mA
1.0 mA
10 mA
BANDWIDTH = 1.0 Hz
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Noise Figure
0.5
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
4
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.4
1.0
2.0
3.0
4.0
0.3
0.01
h , DC CURRENT GAIN (NORMALIZED)
0.05 2.0 3.0 100.02 0.03
0.2
1.00.1 5.0
FE
VCE = 5.0 V
TA = 125°C
25°C
-55°C
0.7
0.5
0.50.2 0.3
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Figure 9. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 10. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
0.01
0
-0.8
-1.2
-1.6
-2.4
TJ = 25°C
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
TJ = 25°C to 125°C
-55°C to 25°C
RVBE, BASE-EMITTER
θ
TEMPERATURE COEFFICIENT (mV/ C)°
-0.4
-2.0
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
8.0
0.8
1.0
2.0
3.0
4.0
6.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
TJ = 25°C
Ccb
Cob Ceb Cib
1.0 2.0 5.03.0 7.0 10 20 30 50 70 100
500
300
200
70
50
100
VCE = 5.0 V
TJ = 25°C
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
Figure 12. Current−Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
MMBT6428LT1G, MMBT6429LT1G, NSVMMBT6429LT1G
www.onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT*
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE0.35 0.54 0.69 0.014 0.021 0.027
c0 −−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MMBT6428LT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ON Semiconductor:
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G