R1122N SERIES
LOW NOISE 150mA LDO REGULATOR
NO.EA-060-111027
1
OUTLINE
The R1122N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low
supply current, low ON-resistance, and high Ripple Rejection. Each of these voltage regulator ICs consists of a
voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs
perform with low dropout voltage and a chip enable function.
The line transient response and load transient response of the R1122N Series are excellent, thus these ICs
are very suitable for the power supply for hand-held communication equipment.
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
(Mini-mold) package , high density mounting of the ICs on boards is possible.
FEATURES
Supply Current ................................................................ Typ. 100μA
Standby Mode Current .................................................. Typ. 0.1μA
Dropout Voltage ..............................................................Typ. 0.19V (IOUT=100mA 3.0V Output type)
Ripple Rejection.............................................................. Typ. 80dB(f=1kHz)
Temperature-Drift Coefficient of Output Voltage ............. Typ. ±100ppm/°C
Line Regulation ...............................................................Typ. 0.05%/V
Output Voltage Accuracy.................................................±2.0%
Output Voltage Range..................................................... 1.5V to 5.0V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
Package ........................................................................ SOT-23-5 (Mini-mold)
Built-in chip enable circuit ( 2 types; A: active “Low”, B: active “High”)
Built-in fold-back protection circuit .................................. Short Current Typ.30mA
Pin-out.............................................................................Similar to the TK112,TK111
Ceramic Capacitors Recommended to be used with this IC
APPLICATIONS
Power source for cellular phones such as GSM, CDMA, PCS and so forth.
Power source for domestic appliances such as cameras, VCRs and camcorders.
Power source for battery-powered equipment.
R1122N
2
BLOCK DIAGRAM
R1122Nxx1A R1122Nxx1B
31
4
+
_
Current Limit
Vref
V
OUT
V
DD
CE GND
2
31
4
+
_
Current Limit
Vref
V
OUT
V
DD
CE GND
2
SELECTION GUIDE
The output voltage, the active type for the ICs can be selected at the user's request.
Product Name Package Quantity per Reel Pb Free Halogen Free
R1122Nxx1-TR-FE SOT-23-5 3,000 pcs Yes Yes
xx : The output voltage can be designated in the range from 1.5V(15) to 5.0V(50) in 0.1V steps.
(For other voltages, please refer to MARK INFORMATIONS.)
: Designation of Active Type.
(A) "L" active
(B) "H" active
R1122N
3
PIN CONFIGURATION
SOT-23-5
1
4
5
23
(mark side)
PIN DESCRIPTION
Pin No Symbol Description
1 VOUT Output pin
2 GND Ground Pin
3 VDD Input Pin
4 CE or CE Chip Enable Pin
5 NC No Connection
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 7.0 V
VCE Input Voltage(CE or CE Pin) -0.3 ~ VIN+0.3 V
VOUT Output Voltage -0.3 ~ VIN+0.3 V
IOUT Output Current 200 mA
PD Power Dissipation (SOT-23-5) 420 mW
Topt Operating Temperature Range -40 ~ 85 °C
Tstg Storage Temperature Range -55 ~ 125 °C
) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field.
The functional operation at or over these absolute maximum ratings is not assured.
R1122N
4
ELECTRICAL CHARACTERISTICS
R1122Nxx1A Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output Voltage VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
30mA
VOUT
×0.98 VOUT
×1.02 V
IOUT Output Current VIN = Set VOUT + 1V
When VOUT = Set VOUT -0.1V 150 mA
ΔVOUT/ΔIOUT Load Regulation VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
80mA 12 40 mV
VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS Supply Current VIN = Set VOUT + 1V 100 170 μA
Istandby Supply Current (Standby) VIN = VCE = Set VOUT + 1V 0.1 1.0 μA
ΔVOUT/ΔVIN Line Regulation Set VOUT+0.5V
<
=
VIN
<
=
6.0V
IOUT = 30mA 0.05 0.20 %/V
RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V 80 dB
VIN Input Voltage 2.0 6.0 V
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
IOUT = 30mA
40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
ISC Short Current Limit VOUT = 0V 30 mA
RPU
CE
Pull-up Resistance 2.5 5.0 10.0 MΩ
VCEH
CE
Input Voltage “H” 1.5 VIN V
VCEL
CE
Input Voltage “L” 0.00 0.25 V
en Output Noise BW=10Hz to 100kHz 30 μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
R1122N
5
R1122Nxx1B Topt=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT Output Voltage VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
30mA
VOUT
×0.98 VOUT
×1.02 V
IOUT Output Current VIN = Set VOUT + 1V
When VOUT = Set VOUT -0.1V 150 mA
ΔVOUT/ΔIOUT Load Regulation VIN = Set VOUT + 1V
1mA
<
=
IOUT
<
=
80mA 12 40 mV
VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
ISS Supply Current VIN = Set VOUT + 1V 100 170
μA
Istandby Supply Current (Standby)
VIN = Set VOUT + 1V
VCE =GND 0.1 1.0
μA
ΔVOUT/ΔVIN Line Regulation Set VOUT + 0.5V
<
=
VIN
<
=
6.0V
IOUT = 30mA 0.05 0.20 %/V
RR Ripple Rejection f = 1kHz, Ripple 0.5Vp-p
VIN = Set VOUT + 1V 80 dB
VIN Input Voltage 2.0 6.0 V
ΔVOUT/
ΔTopt
Output Voltage
Temperature Coefficient
IOUT = 30mA
40°C
<
=
Topt
<
=
85°C ±100 ppm/°C
ISC Short Current Limit VOUT = 0V 30 mA
RPD CE Pull-down Resistance 2.5 5.0 10.0
MΩ
VCEH CE Input Voltage “H” 1.5 VIN V
VCEL CE Input Voltage “L” 0.00 0.25 V
en Output Noise BW=10Hz to 100kHz 30
μVrms
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
R1122N
6
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage
VDIF (V)
Output Voltage
V
OUT (V)
Condition Typ. Max.
1.5
<
=
VOUT
<
=
1.6 0.32 0.55
1.7
<
=
VOUT
<
=
1.8 0.28 0.47
1.9
<
=
VOUT
<
=
2.3 0.25 0.35
2.4
<
=
VOUT
<
=
2.7 0.20 0.29
2.8
<
=
VOUT
<
=
5.0
IOUT = 100mA
0.19 0.26
OPERATION
R1122Nxx1A R1122Nxx1B
31
4
+
_
Current Limit
Vref
V
OUT
V
DD
CE GND
R1
R2
2
R1
R2
31
4
+
_
Current Limit
Vref
V
OUT
V
DD
CE GND
2
In these ICs, fluctuation of the output voltage, VOUT is detected by feed-back registers R1, R2, and the result is
compared with a reference voltage by the error amplifier, so that a constant voltage is output.
A current limit circuit for protection at short mode, and a chip enable circuit, are included.
R1122N
7
TEST CIRCUITS
IN
IOUT
VDD VOUT
GND
R1122Nxx1B
Series
CE
OUT
1
4
2
3
2.2μF
IN
I
SS
V
DD
V
OUT
GND
R1122Nxx1B
Series
CE
OUT
1
4
2
3
2.2μF
Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit
IN
I
OUT
V
DD
V
OUT
GND
R1122Nxx1B
Series
CE
OUT
1
4
2
3
P.G
IN
I
OUT
V
DD
V
OUT
GND
R1122Nxx1B
Series
CE
OUT
I1 I2
1
4
2
3
2.2μF
Fig.3 Ripple Rejection, Line Transient Fig.4 Load Transient Response Test Circuit
Response Test Circuit
R1122N
8
TECHNICAL NOTES
When using these ICs, consider the following points:
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, be sure to use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series
Resistance).
(Note: When the additional ceramic capacitors are connected to the output pin with the output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with the same external
components as the ones to be used on the PCB.)
Recommended Capacitors ; GRM40X5R225K6.3 (Murata)
GRM40-034X5R335K6.3 (Murata)
GRM40-034X5R475K6.3 (Murata)
PCB Layout
Make VDD and GND lines sufficient. If their impedance is high, picking up the noise or unstable operation may
result. Connect a capacitor with a capacitance of 2.2μF or more between VDD and GND pin as close as possible.
Set external components, especially output capacitor as close as possible to the ICs and make wiring as short
as possible.
TYPICAL APPLICATION
IN V
DD
V
OUT
GND
R1122Nxx1A
Series
CE
OUT
Cap.
+
Cap.
+
IN V
DD
V
OUT
GND
R1122Nxx1B
Series
CE
OUT
Cap.
+
Cap.
+
(External Components)
Output Capacitor ; Ceramic 2.2μF (Set output voltage in the range from 2.5 to 5.0V)
Ceramic 4.7μF (Set output voltage in the range from 1.5 to 2.5V)
Input Capacitor ; Ceramic 2.2μF
R1122N
9
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current
R1122N151B R1122N201B
Output Voltage V
OUT
(V)
V
IN
=2.0V
V
IN
=2.5V
V
IN
=3.5V
Output Current I
OUT
(mA)
0 100 200 300 500400
1.6
1.8
1.4
1.2
1
0.8
0.4
0.2
0.6
0
Output Voltage VOUT(V)
VIN=2.3V
VIN=2.5V
VIN=3.0V
VIN=4.0V
Output Current IOUT(mA)
0 100 200 300 500400
2.5
2
1.5
0.5
1
0
R1122N301B R1122N401B
Output Voltage V
OUT
(V)
V
IN
=3.3V
V
IN
=3.5V
V
IN
=4.0V
V
IN
=5.0V
Output Current I
OUT
(mA)
0 100 200 300 500400
3.5
3
2.5
0.5
1.5
1
2
0
Output Voltage V
OUT
(V)
V
IN
=4.3V
V
IN
=4.5V
V
IN
=5.0V
V
IN
=6.0V
Output Current I
OUT
(mA)
0 100 200 300 500400
5
4
3
1
2
0
R1122N501B
Output Voltage V
OUT
(V)
V
IN
=5.3V
V
IN
=5.5V
V
IN
=6.0V
V
IN
=7.0V
Output Current I
OUT
(mA)
0 100 200 300 500400
6
5
4
1
2
3
0
R1122N
10
2) Output Voltage vs. Input Voltage
R1122N151B R1122N201B
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
Input Voltage V
IN
(V)
12 34 675
1.600
1.500
1.400
1.300
1.200
1.100
1.000
Output Voltage V
OUT
(V)
I
OUT
=1mA
I
OUT
=30mA
I
OUT
=50mA
Input Voltage V
IN
(V)
12 34 675
2.100
2.000
1.900
1.800
1.700
1.600
1.500
R1122N301B R1122N401B
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
Input Voltage V
IN
(V)
234 675
3.100
3.000
2.900
2.800
2.700
2.600
2.500
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
Input Voltage V
IN
(V)
234 675
4.500
4.000
3.500
3.000
2.500
R1122N501B
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
Input Voltage V
IN
(V)
234 675
5.500
5.000
4.500
4.000
3.500
3.000
2.500
R1122N
11
3) Dropout Voltage vs. Output Current
R1122N151B R1122N201B
Dropout Voltage V
DIF
(V)
Topt=-40°C
Topt=25°C
Topt=85°C
Output Current I
OUT
(mA)
0 50 150100
0.600
0.500
0.400
0.300
0.200
0.100
0.000
Dropout Voltage V
DIF
(V)
Topt=-40°C
Topt=25°C
Topt=85°C
Output Current I
OUT
(mA)
0 50 150100
0.600
0.500
0.400
0.300
0.200
0.100
0.000
R1122N301B R1122N401B
Dropout Voltage V
DIF
(V)
Topt=-40°C
Topt=25°C
Topt=85°C
Output Current I
OUT
(mA)
0 50 150100
0.600
0.500
0.400
0.300
0.200
0.100
0.000
Dropout Voltage V
DIF
(V)
Topt=-40°C
Topt=25°C
Topt=85°C
Output Current I
OUT
(mA)
0 50 150100
0.600
0.500
0.400
0.300
0.200
0.100
0.000
R1122N501B
Dropout Voltage V
DIF
(V)
Topt=-40°C
Topt=25°C
Topt=85°C
Output Current I
OUT
(mA)
0 50 150100
0.600
0.500
0.400
0.300
0.200
0.100
0.000
R1122N
12
4) Output Voltage vs. Temperature
R1122N151A/B R1122N201A/B
Output VoltageV
OUT
(V)
V
IN
=2.5V C
IN
=1μF
C
OUT
=2.2μF I
OUT
=30mA
Temperature Topt (°C)
-50 -25 0 25 100
50 75
1.53
1.52
1.51
1.50
1.49
1.47
1.48
Output VoltageVOUT(V)
VIN=3.0V CIN=1μF
COUT=2.2μF IOUT=30mA
Temperature Topt (°C)
-50 -25 0 25 100
50 75
2.10
2.08
2.04
2.06
2.00
2.02
1.98
1.96
1.90
1.94
1.92
R1122N301A/B R1122N401A/B
Output VoltageV
OUT
(V)
V
IN
=4.0V C
IN
=1μF
C
OUT
=2.2μF I
OUT
=30mA
Temperature Topt (°C)
-50 -25 0 25 100
50 75
3.06
3.04
3.02
3.00
2.98
2.94
2.96
Output VoltageVOUT(V)
VIN=5.0V CIN=1μF
COUT=2.2μF IOUT=30mA
Temperature Topt (°C)
-50 -25 0 25 100
50 75
4.08
4.06
4.04
4.00
4.02
3.98
3.92
3.96
3.94
R1122N501A/B
Output VoltageVOUT(V)
VIN=6.0V CIN=1μF
COUT=2.2μF IOUT=30mA
Temperature Topt (°C)
-50 -25 0 25 100
50 75
5.10
5.08
5.04
5.06
5.00
5.02
4.98
4.96
4.90
4.94
4.92
R1122N
13
5) Supply Current vs. Input Voltage
R1122N151B R1122N201B
Supply Current I
SS
(μA)
Input Voltage V
IN
(V)
12 34 756
120
100
80
60
40
20
0
Supply Current I
SS
(μA)
Input Voltage V
IN
(V)
12 34 756
120
100
80
60
40
20
0
R1122N301B R1122N401B
Supply Current I
SS
(μA)
Input Voltage V
IN
(V)
12 34 756
120
100
80
60
40
20
0
Supply Current I
SS
(μA)
Input Voltage V
IN
(V)
12 34 756
120
100
80
60
40
20
0
R1122N501B
Supply Current I
SS
(μA)
Input Voltage V
IN
(V)
12 34 756
120
100
80
60
40
20
0
R1122N
14
6) Supply Current vs. Temperature
R1122N151A/B R1122N201A/B
Supply Current I
SS
(μA)
Temperature Topt (°C)
-50 -25 0 25
V
IN
=2.5V C
IN
=1μF
C
OUT
=2.2μF
10050 75
200
150
100
50
0
Supply Current ISS (μA)
Temperature Topt (°C)
-50 -25 0 25
VIN=3.0V CIN=1μF
COUT=2.2μF
10050 75
200
150
100
50
0
R1122N301A/B R1122N401A/B
Supply Current I
SS
(μA)
Temperature Topt (°C)
-50 -25 0 25
V
IN
=4.0V C
IN
=1μF
C
OUT
=2.2μF
10050 75
200
150
100
50
0
Supply Current ISS (μA)
Temperature Topt (°C)
-50 -25 0 25
VIN=5.0V CIN=1μF
COUT=2.2μF
10050 75
200
150
100
50
0
R1122N501A/B
Supply Current I
SS
(μA)
Temperature Topt (°C)
-50 -25 0 25
V
IN
=6.0V C
IN
=1μF
C
OUT
=2.2μF
10050 75
200
150
100
50
0
R1122N
15
7) Ripple Rejection vs. Frequency
R1122N151A/B R1122N201A/B
Ripple Rejection RR (dB)
Frequency Freq (kHz)
0.1 1
V
IN
=2.5V+0.5Vp-p
C
OUT
=2.2μF I
OUT
=30mA
10010
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
Ripple Rejection RR (dB)
Frequency Freq (kHz)
0.1 1
V
IN
=3.0V+0.5Vp-p
C
OUT
=2.2μF I
OUT
=30mA
10010
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
R1122N301A/B R1122N401A/B
Ripple Rejection RR (dB)
Frequency Freq (kHz)
0.1 1
V
IN
=4.0V+0.5Vp-p
C
OUT
=2.2μF I
OUT
=30mA
10010
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
Ripple Rejection RR (dB)
Frequency Freq (kHz)
0.1 1
V
IN
=5.0V+0.5Vp-p
C
OUT
=2.2μF I
OUT
=30mA
10010
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
R1122N501A/B
Ripple Rejection RR (dB)
Frequency Freq (kHz)
0.1 1
V
IN
=6.0V+0.5Vp-p
C
OUT
=2.2μF I
OUT
=30mA
10010
90.00
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
R1122N
16
8) Ripple Rejection vs. Input Voltage (DC bias)
R1122N301B R1122N301B
Ripple Rejection RR (dB)
Input Voltage VIN (V)
3.10 3.20 3.30 3.40
COUT=Ceramic 2.2μF
IOUT=1mA
3.50
90.00
f=400Hz
f=1kHz
f=10kHz
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
Ripple Rejection RR (dB)
Input Voltage VIN (V)
3.10 3.20 3.30 3.40
COUT=Ceramic 2.2μF
IOUT=10mA
3.50
90.00
f=400Hz
f=1kHz
f=10kHz
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
R1122N301B
Ripple Rejection RR (dB)
Input Voltage VIN (V)
3.10 3.20 3.30 3.40
COUT=Ceramic 2.2μF
IOUT=50mA
3.50
90.00
f=400Hz
f=1kHz
f=10kHz
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
9) Input Transient Response
R1122N501B To p t= 2 5 °C
2
1
Ch1 1.00V Ch2Ch1 20.0mV M20.0μs
VIN
VOUT
Tek Run : 2.50MS/s Average
VIN=2.5V
3.5V
IOUT=30mA
CIN=none
COUT=2.2μF
tr/tf=5μs
R1122N
17
R1122N201B To p t= 2 5 °C
2
1
1.00V Ch2Ch1 20.0mV M20.0μs
V
IN
V
OUT
Tek Run : 2.50MS/s Average
R1122N301B To p t= 2 5 °C
2
1
1.00V Ch2Ch1 20.0mV M20.0μs
V
IN
V
OUT
Tek Run : 2.50MS/s Average
R1122N401B To p t= 2 5 °C
2
1
1.00V Ch2Ch1 20.0mV M20.0μs
V
IN
V
OUT
Tek Run : 2.50MS/s Average
VIN=3.0V
4.0V
IOUT=30mA
CIN=none
COUT=2.2μF
tr/tf=5μs
VIN=4.0V
5.0V
IOUT=30mA
CIN=none
COUT=2.2μF
tr/tf=5μs
VIN=5.0V
6.0V
IOUT=30mA
CIN=none
COUT=2.2μF
tr/tf=5μs