PRELIMINARY DATA SHEET 512M bits DDR-II SDRAM EDE5104ABSE (128M words x 4 bits) EDE5108ABSE (64M words x 8 bits) EDE5116ABSE (32M words x 16 bits) Description Features The EDE5104AB is a 512M bits DDR-II SDRAM organized as 33,554,432 words x 4 bits x 4 banks. The EDE5108AB is a 512M bits DDR-II SDRAM organized as 16,777,216 words x 8 bits x 4 banks. It packaged in 64-ball FBGA (BGA) package. The EDE5116AB is a 512M bits DDR-II SDRAM organized as 8,388,608 words x 16 bits x 4 banks. It is packaged in 84-ball FBGA (BGA) package. * 1.8V power supply * Double-data-rate architecture: two data transfers per clock cycle * Bi-directional, differential data strobe (DQS and /DQS) is transmitted/received with data, to be used in capturing data at the receiver * DQS is edge aligned with data for READs: centeraligned with data for WRITEs * Differential clock inputs (CK and /CK) * DLL aligns DQ and DQS transitions with CK transitions * Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS * Four internal banks for concurrent operation * Data mask (DM) for write data * Burst lengths: 4, 8 * /CAS Latency (CL): 3, 4, 5 * Auto precharge operation for each burst access * Auto refresh and self refresh modes * 7.8s average periodic refresh interval * 1.8V (SSTL_18 compatible) I/O * Posted CAS by programmable additive latency for better command and data bus efficiency * Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality * Programmable RDQS, /RDQS output for making x 8 organization compatible to x 4 organization * /DQS, (/RDQS) can be disabled for single-ended Data Strobe operation. * FBGA(BGA) package is lead free solder (Sn-Ag-Cu) Document No. E0323E20 (Ver. 2.0) Date Published December 2002 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2002 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Ordering Information Part number EDE5104ABSE-5A-E EDE5104ABSE-4A-E EDE5108ABSE-5A-E EDE5108ABSE-4A-E EDE5116ABSE-5A-E EDE5116ABSE-4A-E Mask version B Organization (words x bits) 128M x 4 Internal Banks 4 64M x 8 32M x 16 Data rate (Mbps) /CAS latency 533 400 533 400 533 400 4, 5 3, 4, 5 4, 5 3, 4, 5 4, 5 3, 4, 5 Package 64-ball FBGA (BGA) 84-ball FBGA (BGA) Part Number E D E 51 04 A B SE - 4A - E Elpida Memory Type D: Monolithic Device Lead Free Product Code E: DDR-II Speed 5A: 533Mbps 4A: 400Mbps Density / Bank 51: 512M /4 banks Bit Organization 04: x4 08: x8 16: x16 Package SE: FBGA (BGA with back cover) Die Rev. Voltage, Interface A: 1.8V, SSTL_18 Preliminary Data Sheet E0323E20 (Ver. 2.0) 2 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Pin Configurations /xxx indicates active low signal. 64-ball FBGA (BGA) (x8, x4 organization) 1 2 NC NC A 3 84-ball FBGA (BGA) (x16 organization) 7 8 9 NC NC B C C D D E E VSSQ /DQS VDDQ (NC)* F DQ6 DM/RDQS (NC)* VSSQ (DM)* DQS VSSQ 3 7 8 9 VDD NC VSS VSSQ /UDQS VDDQ DQ14 VSSQ UDM UDQS VSSQ DQ15 VDDQ VDDQ DQ9 VDDQ DQ8 VDDQ DQ12 VSSQ DQ11 DQ10 VSSQ DQ13 VDD NC VSS VSSQ /LDQS VDDQ DQ6 VSSQ LDM LDQS VSSQ F DQ7 (NC)* G DQ7 G VDDQ H 2 A B VDD NU/ /RDQS VSS 1 DQ4 (NC)* DQ1 VDDQ VSSQ VDDQ DQ3 DQ2 DQ0 VSSQ VDDQ VDDQ DQ1 VDDQ VDDQ DQ0 VDDQ H DQ5 VSSQ DQ3 DQ2 VSSQ DQ5 VDDL VREF VSS VSSDL CK VDD CKE /WE /RAS /CK ODT BA0 BA1 /CAS /CS A10 A1 A2 A0 A3 A5 A6 A4 A7 A9 A11 A8 A12 NC NC NC DQ4 (NC)* J J VDDL VREF VSS VSSDL CK VDD /WE /RAS /CK ODT K K CKE L L NC BA0 BA1 /CAS /CS NC M M A10 A1 A2 A0 VDD N VDD N VSS A3 A5 A6 A4 VSS P P A7 A9 A11 A8 VSS R VSS R VDD A12 NC NC A13 VDD (Top view) (Top view) Note: ( )* marked pins are for x4 organization. Pin name Function Pin name Function A0 to A13 Address inputs ODT ODT control BA0, BA1 Bank select VDD Supply voltage for internal circuit DQ0 to DQ15 Data input/output VSS Ground for internal circuit DQS, /DQS UDQS, /UDQS LDQS, /LDQS Differential data strobe VDDQ Supply voltage for DQ circuit RDQS, /RDQS Differential data strobe for read VSSQ Ground for DQ circuit /CS Chip select VREF Input reference voltage /RAS, /CAS, /WE Command input VDDL Supply voltage for DLL circuit CKE Clock enable VSSDL Ground for DLL circuit CK, /CK Differential Clock input NC*1 No connection DM, UDM, LDM 2 Write Data mask NU* Notes: 1. Not internally connected with die. 2. Don't use other than reserved functions. Preliminary Data Sheet E0323E20 (Ver. 2.0) 3 Not usable EDE5104ABSE, EDE5108ABSE, EDE5116ABSE CONTENTS Description.....................................................................................................................................................1 Features.........................................................................................................................................................1 Ordering Information......................................................................................................................................2 Part Number ..................................................................................................................................................2 Pin Configurations .........................................................................................................................................3 Electrical Specifications.................................................................................................................................5 Block Diagram .............................................................................................................................................10 Pin Function.................................................................................................................................................11 Command Operation ...................................................................................................................................13 Simplified State Diagram .............................................................................................................................20 Operation of DDR-II SDRAM.......................................................................................................................21 Package Drawing ........................................................................................................................................54 Recommended Soldering Conditions ..........................................................................................................54 Preliminary Data Sheet E0323E20 (Ver. 2.0) 4 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Electrical Specifications * All voltages are referenced to VSS (GND) * Execute power-up and Initialization sequence before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit Note Power supply voltage VDD -0.5 to +2.3 V 1 Power supply voltage for output VDDQ -0.5 to +2.3 V 1 Input voltage VIN -0.5 to +2.3 V 1 Output voltage VOUT -0.5 to +2.3 V 1 Operating temperature (ambient) TA 0 to +70 C 1 Storage temperature TSTG -55 to +150 C 1 Power dissipation PD 1.0 W 1 Short circuit output current IOUT 50 mA 1 Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (SSTL_18) * There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions VDDQ must be less than or equal to VDD. Parameter Symbol min. Typ. max. Unit Notes Supply voltage VDD 1.7 Supply voltage for output VDDQ 1.7 1.8 1.9 V 4 1.8 1.9 V 4 Input reference voltage VREF 0.49 x VDDQ 0.50 x VDDQ 0.51 x VDDQ V 1, 2 Termination voltage VTT VREF - 0.04 VREF VREF + 0.04 V 3 DC input logic high VIH (dc) VREF + 0.125 VDDQ + 0.3V V DC input low VIL (dc) -0.3 VREF - 0.125 V AC input logic high VIH (ac) VREF + 0.250 V AC input low VIL (ac) VREF - 0.250 V Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF are expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed 2% VREF (dc). 3. VTT of transmitting device must track VREF of receiving device. 4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together. Preliminary Data Sheet E0323E20 (Ver. 2.0) 5 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE DC Characteristics 1 (TA = 0 to +70C, VDD, VDDQ = 1.8V 0.1V) max. Parameter Symbol Grade x 4, x 8 x 16 Unit Test condition one bank; tRC = tRC (min.) ; tCK = tCK (min.) ; DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle one bank; Burst = 4; tRC = tRC (min.) ; CL = 4; tCK = tCK (min.) ; IOUT = 0mA; address and control inputs changing once per clock cycle all banks idle; power-down mode; CKE = VIL (max.); tCK = tCK (min.) /CS = VIH (min.); all banks idle; CKE = VIH (min.); tCK = tCK (min.) ; address and control inputs changing once per clock cycle one bank active; power-down mode; CKE = VIL (max.); tCK = tCK (min.) one bank; active;/CS = VIH (min.); CKE = VIH (min.); tRC = tRAS max; tCK = tCK (min.); DQ, DM, and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle one bank; Burst = 4; burst; address and control inputs changing once per clock cycle; DQ and DQS outputs changing twice per clock cycle; CL = 4; tCK = tCK (min.) ; IOUT = 0mA one bank; Burst = 4; writes; continuous burst; address and control inputs changing once per clock cycle; DQ and DQS inputs changing twice per clock cycle; CL = 4; tCK = tCK (min.) Operating current (ACT-PRE) IDD0 TBD TBD mA Operating current (ACT-READ-PRE) IDD1 TBD TBD mA Precharge power-down IDD2P standby current TBD TBD mA Idle standby current IDD2N TBD TBD mA Active power-down standby current IDD3P TBD TBD mA Active standby current IDD3N TBD TBD mA Operating current (Burst read operating) IDD4R TBD TBD mA Operating current (Burst write operating) IDD4W TBD TBD mA Auto-refresh current IDD5 TBD TBD mA Self-refresh current IDD6 TBD TBD mA Self Refresh Mode; CKE = 0.2V mA Four bank interleaving READs (BL4) with auto precharge, tRC = tRC (min.); Address and control inputs change during Active, READ, or WRITE commands. Operating current (Bank interleaving) IDD7 TBD TBD tRC = tRFC (min.) DC Characteristics 2 (TA = 0 to +70C, VDD, VDDQ = 1.8V 0.1V) Parameter Symbol Minimum required output pull-up under AC VOH test load Maximum required output pull-down under VOL AC test load Output timing measurement reference level VOTR Unit Notes VTT + 0.603 V 5 VTT - 0.603 V 5 0.5 x VDDQ V 1 Output minimum sink DC current IOL +13.4 mA 3, 4, 5 Output minimum source DC current IOH -13.4 mA 2, 4, 5 Note: 1. 2. 3. 4. 5. The VDDQ of the device under test is referenced. VDDQ = 1.7V; VOUT = 1.42V. VDDQ = 1.7V; VOUT = 0.28V. The DC value of VREF applied to the receiving device is expected to be set to VTT. After OCD calibration to 18 at TA = 25C, VDD = VDDQ = 1.8V. Preliminary Data Sheet E0323E20 (Ver. 2.0) 6 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Pin Capacitance (TA = 25C, VDD, VDDQ = 1.8V 0.1V) Parameter Symbol CLK input pin capacitance CCK Input pin capacitance CIN Input/output pin capacitance CI/O Pins min. Typ max. Unit Notes CK 1.5 2.0 2.5 pF 1 1.5 2.0 2.5 pF 1 3.0 3.5 4.0 pF 2 /RAS, /CAS, /WE, /CS, CKE. ODT, Address DQ, DQS, /DQS, UDQS, /UDQS, LDQS, /LDQS, /RDQS, /RDQS, DM, UDM, LDM Notes: 1. Matching within 0.25pF. 2. Matching within 0.50pF. AC Characteristics (TA = 0 to +70C, VDD, VDDQ = 1.8V 0.1V, VSS, VSSQ = 0V) Frequency (Mbps) Parameter Symbol DQ output access time from CK, /CK DQS output access time from CK, /CK -5A -4A 533 400 min. max. min. max. Unit tAC -500 +500 -600 +600 ps tDQSCK -450 +450 -500 +500 ps CK high-level width tCH 0.45 0.55 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 0.45 0.55 tCK tHP min. (tCL, tCH) min. (tCL, tCH) ps CK half period Clock cycle time tCK 3750 8000 5000 8000 ps DQ and DM input hold time tDH 350 400 ps DQ and DM input setup time tDS 350 400 ps tIPW 0.6 0.6 tCK tDIPW 0.35 0.35 tCK tHZ tAC max. tAC max. ps tLZ tAC min. tAC max. tAC min. tAC max. ps tDQSQ 300 350 ps Control and Address input pulse width for each input DQ and DM input pulse width for each input Data-out high-impedance time from CK,/CK Data-out low-impedance time from CK,/CK DQS-DQ skew for DQS and associated DQ signals DQ hold skew factor tQHS 400 450 ps DQ/DQS output hold time from DQS tQH tHP - tQHS tHP - tQHS ps Write command to first DQS latching transition tDQSS WL - 0.25 WL + 0.25 WL - 0.25 WL + 0.25 tCK DQS input high pulse width tDQSH 0.35 0.35 tCK DQS input low pulse width tDQSL 0.35 0.35 tCK DQS falling edge to CK setup time tDSS 0.2 0.2 tCK DQS falling edge hold time from CK tDSH 0.2 0.2 tCK 2 2 tCK Mode register set command cycle time tMRD Write preamble setup time tWPRES 0 0 tCK Write postamble tWPST 0.4 0.6 0.4 0.6 tCK Write preamble tWPRE 0.25 0.25 tCK Preliminary Data Sheet E0323E20 (Ver. 2.0) 7 Notes EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Frequency (Mbps) -5A -4A 533 400 Parameter Symbol min. max. min. max. Unit Address and control input hold time tIH 500 600 ps ddress and A control input setup time tIS 500 600 ps Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 0.4 0.6 tCK Active to precharge command tRAS 45 45 ns Active to active/auto refresh command time tRC 60 65 ns Active to read or write command delay tRCD 15 20 ns Precharge command period tRP 15 20 ns Active to auto-precharge delay tRAP tRCD min. tRCD min. ns Active bank A to active bank B command period (EDE5104AB, EDE5108AB) tRRD 7.5 10 ns (EDE5116AB) tRRD 10 10 ns Write recovery time tWR 15 15 ns Auto precharge write recovery + precharge time tDAL (tWR/tCK)+ (tRP/tCK) (tWR/tCK)+ (tRP/tCK) tCK Internal write to read command delay tWTR 7.5 10 ns Exit self refresh to any command tXSC 200 200 tCK tXPNR 2 2 tCK tXPRD 6 - AL 6 - AL tCK 2 tXARD 2 2 tCK 3 tXARDS 6 - AL 6 - AL tCK 3 Output impedance test driver delay tOIT 0 12 0 12 ns Auto refresh to active/auto refresh command time tRFC 105 105 ns Average periodic refresh interval tREFI 7.8 7.8 s Exit power down to any non-read command Exit precharge power down to read command Exit active power down to read command Exit active power down to read command (slow exit/low power mode) Notes: 1. For each of the terms above, if not already an integer, round to the next highest integer. 2. AL: Additive Latency. 3. MRS A12 bit define which active power down exit timing to be applied. Preliminary Data Sheet E0323E20 (Ver. 2.0) 8 Notes 1 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE AC Electrical Characteristics and Operating Conditions Parameter Symbol min max Unit ODT turn-on delay tAOND 2 2 tCK ODT turn-on tAON tAC(min) tAC(max) + 1000 ps ODT turn-on (power - down mode) tAONPD tAC(min) + 2000 2tCK + tAC(max) + 1000 ps ODT turn-off delay tAOFD 2.5 2.5 tCK ODT turn-off tAOF tAC(min) tAC(max) + 600 ps ODT turn-off (power - down mode) tAOFPD tAC(min) + 2000 2.5tCK + tAC(max) + 1000 ns Notes 1 2 Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND. 2. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. Test Conditions tCK VDD CLK VSWING VX /CLK tCL tCH VDD VIH VIL VREF VSS t SLEW = (VIH (ac) - VIL (ac))/t Measurement point DQ VTT RT =25 Preliminary Data Sheet E0323E20 (Ver. 2.0) 9 VREF VSS EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Clock generator Block Diagram Bank 3 Bank 2 Bank 1 A0 to A13, BA0, BA1 Mode register Row address buffer and refresh counter Row decoder CK /CK CKE Memory cell array Bank 0 Control logic /CS /RAS /CAS /WE Command decoder Sense amp. Column decoder Column address buffer and burst counter Data control circuit Latch circuit CK, /CK DLL Input & Output buffer DQS, /DQS RDQS, /RDQS ODT DM DQ Preliminary Data Sheet E0323E20 (Ver. 2.0) 10 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Pin Function CK, /CK (input pins) CK and /CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of /CK. Output (read) data is referenced to the crossings of CK and /CK (both directions of crossing). /CS (input pin) All commands are masked when /CS is registered High. /CS provides for external bank selection on systems with multiple banks. /CS is considered part of the command code. /RAS, /CAS, /WE (input pins) /RAS, /CAS and /WE (along with /CS) define the command being entered. A0 to A13 (input pins) Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write commands to select one location out of the memory array in the respective bank. [Address Pins Table] Address (A0 to A13) Part number Row address Column address EDE5104AB AX0 to AX13 AY0 to AY9, AY11 EDE5108AB AX0 to AX13 AY0 to AY9 EDE5116AB AX0 to AX12 AY0 to AY9 Notes 1 Notes: 1. A13 pin is NC for x16 organization. A10 (AP) (input pin) A10 is sampled during a precharge command to determine whether the precharge applies to one bank (A10 = Low) or all banks (A10 = High). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during mode register set commands. BA0, BA1 (input pins) BA0 and BA1 define to which bank an active, read, write or precharge command is being applied. BA0 also determines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle. [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE (input pin) CKE High activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides precharge power-down and Self Refresh operation (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, /CK and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self refresh. Preliminary Data Sheet E0323E20 (Ver. 2.0) 11 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE DM, UDM and LDM (input pins) DM is an input mask signal for write data. In 32M x 16 products, UDM and LDM control upper byte (DQ8 to DQ15) and lower byte (DQ0 to DQ7). Input data is masked when DM is sampled High coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For x8 configuration, DM function will be disabled when RDQS function is enabled by EMRS. DQ (input/output pins) Bi-directional data bus. DQS, /DQS, UDQS, /UDQS, LDQS, /LDQS (input/output pins) Output with read data, input with write data for source synchronous operation. In 32M x 16 products, UDQS, /UDQS and LDQS, /LDQS control upper byte (DQ8 to DQ15) and lower byte (DQ0 to DQ7). Edge-aligned with read data, centered in write data. Used to capture write data. /DQS can be disabled by EMRS. RDQS, /RDQS (output pins) Differential Data Strobe for READ operation only. DM and RDQS functions are switch able by EMRS. These pins exist only in x8 configuration. /RDQS output will be disabled when /DQS is disabled by EMRS. ODT (input pins) ODT (On Die Termination control) is a registered High signal that enables termination resistance internal to the DDR II SDRAM. When enabled, ODT is only applied to each DQ, DQS, /DQS, RDQS, /RDQS, and DM signal for x 4, x 8 configurations. For x 16 configuration, ODT is applied to each DQ, UDQS, /UDQS, LDQS, /LDQS, UDM, and LDM signal. The ODT pin will be ignored if the Extended Mode Register (EMRS) is programmed to disable ODT. VDD, VSS, VDDQ, VSSQ (power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers. VDDL and VSSDL (power supply) VDDL and VSSDL are power supply pins for DLL circuits. VREF (Power supply) SSTL_18 reference voltage: (0.50 0.01) x VDDQ Preliminary Data Sheet E0323E20 (Ver. 2.0) 12 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Command Operation Command Truth Table The DDR-II SDRAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. CKE Function Symbol Previous Current cycle cycle /CS /RAS /CAS /WE BA1, BA0 A13 to A11 Mode register set MRS H H L L L L BA0 = 0 and MRS OP Code 1 Extended mode register set EMRS H H L L L L BA0 = 1 and EMRS OP Code 1 Auto (CBR) refresh REF H H L L L H x x x x 1 Self refresh entry SELF H L L L L H x x x x 1 Self refresh exit SELFX L H H x x x x x x x 1 Single bank precharge PRE H H L L H L BA x L x 1, 2 Precharge all banks PALL H H L L H L x x H x 1 Bank activate ACT H H L L H H BA Row Address A10 A0 to A9 Notes 1, 2 Write WRIT H H L H L L BA Column L Column 1, 2, 3 Write with auto precharge WRITA H H L H L L BA Column H Column 1, 2, 3 Read READ H H L H L H BA Column L Column 1, 2, 3 Read with auto precharge READA H H L H L H BA Column H Column 1, 2, 3 No operation NOP H x L H H H x x x x 1 Device deselect DESL H x H x x x x x x x 1 Power down mode entry PDEN H L x x x x x x x x 1, 4, 5 Power down mode exit PDEX L H x x x x x x x x 1, 4, 5 Remark: H = VIH. L = VIL. x = VIH or VIL Notes: 1. All DDR-II commands are defined by states of /CS, /RAS, /CAS, /WE, and CKE at the rising edge of the clock. 2. Bank Select (BA0, BA1), determine which bank is to be operated upon. 3. Burst reads or writes should not be terminated other than specified as Reads interrupted by a Read in Burst Read command [READ] or Writes interrupted by a Write in Burst Write command [WRIT]. 4. The Power Down Mode does not perform any refresh operations. The duration of Power Down is therefore limited by the refresh requirements of the device. One clock delay is required for mode entry and exit. 5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh. Preliminary Data Sheet E0323E20 (Ver. 2.0) 13 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE CKE Truth Table CKE Command Current state Function Previous Cycle Self refresh INVALID H x x x x x x 1 L H H x x x x 2 L H L H H H x 2 Address 2 Exit self refresh with device deselect Exit self refresh with no operation Power down /CS /RAS /CAS /WE BA1,BA0, A13 to A0 Notes Illegal L H L Command Maintain self refresh L L x x x x x INVALID H x x x x x x 1 Power down mode exit L H H x x x x 2 L Command except NOP Address 2 ILLEGAL All banks idle Current Cycle L H Maintain power down mode L L x x x x Device deselect H H H x x x Refer to the current state truth table H H L Command Power down H L H x Register command begin power H down next cycle L L Command Entry self refresh H L L L L H H x x x x x 3 Address 3 Address 3 H x 4 x x x Any state other Refer to operations in the current state truth table than listed above Power down entry H L x x x x x ILLEGAL L x x x x x x 5 Remark: H = VIH. L = VIL. x = VIH or VIL Notes: 1. For the given Current State CKE must be low in the previous cycle. 2. When CKE has a low to high transition, the clock and other inputs are re-enabled asynchronously. The minimum setup time for CKE (tCES) must be satisfied before any command other than self refresh exit. 3. The inputs (BA1, BA0, A13 to A0) depend on the command that is issued. See the Command Truth Table for more information. 4. The Auto Refresh, Self Refresh mode, and the Mode Register Set modes can only be entered from the all banks idle state. 5. Must be a legal command as defined in the Command Truth Table. Preliminary Data Sheet E0323E20 (Ver. 2.0) 14 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Function Truth Table The following tables show the operations that are performed when each command is issued in each state of the DDR SDRAM. Current state /CS Idle Bank(s) active Read /RAS /CAS /WE Address Command Operation H x x x x DESL Nop or Power down L H H H x NOP Nop or Power down L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT Row activating L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L H x REF Auto refresh 2 L L L H x SELF Self refresh 2 L L L L BA, MRS-OPCODE MRS Mode register accessing 2 2 L L L L BA, EMRS-OPCODE EMRS Extended mode register accessing H x x x x DESL Nop L H H H x NOP Nop L H L H BA, CA, A10 (AP) READ Begin Read L H L H BA, CA, A10 (AP) READA Begin Read L H L L BA, CA, A10 (AP) WRIT Begin Write Notes L H L L BA, CA, A10 (AP) WRITA Begin Write L L H H BA, RA ACT ILLEGAL L L H L BA, A10 (AP) PRE Precharge L L H L A10 (AP) PALL Precharge all banks L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL H x x x x DESL Continue burst to end -> Row active L H H H x NOP Continue burst to end -> Row active L H L H BA, CA, A10 (AP) READ Burst interrupt 1, 4 L H L H BA, CA, A10 (AP) READA Burst interrupt 1, 4 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Preliminary Data Sheet E0323E20 (Ver. 2.0) 15 1 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Current state /CS /RAS /CAS /WE Address Command Operation Note Write H x x x x DESL L H H H x NOP L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT Burst interrupt 1, 4 Continue burst to end -> Write recovering Continue burst to end -> Write recovering L H L L BA, CA, A10 (AP) WRITA Burst interrupt 1, 4 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Read with H x x x x DESL Continue burst to end -> Precharging auto precharge L H H H x NOP Continue burst to end -> Precharging L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Continue burst to end ->Write recovering with auto precharge Continue burst to end ->Write recovering with auto precharge Write with auto Precharge H x x x x DESL L H H H x NOP L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS Preliminary Data Sheet E0323E20 (Ver. 2.0) 16 ILLEGAL EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Current state /CS /RAS /CAS /WE Address Command Operation Precharging H x x x x DESL Nop -> Enter idle after tRP L H H H x NOP Nop -> Enter idle after tRP L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 Row activating Write recovering Note L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE Nop -> Enter idle after tRP L L H L A10 (AP) PALL Nop -> Enter idle after tRP L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL H x x x x DESL Nop -> Enter bank active after tRCD L H H H x NOP Nop -> Enter bank active after tRCD L H L H BA, CA, A10 (AP) READ ILLEGAL L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL 1 L L L L BA, EMRS-OPCODE EMRS ILLEGAL H x x x x DESL Nop -> Enter bank active after tWR L H H H x NOP Nop -> Enter bank active after tWR L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT New write L H L L BA, CA, A10 (AP) WRITA New write L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Preliminary Data Sheet E0323E20 (Ver. 2.0) 17 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Current state /CS /RAS /CAS /WE Address Command Operation Write recovering with H x x x x DESL Nop -> Enter bank active after tWR auto precharge L H H H x NOP Nop -> Enter bank active after tWR L H L H BA, CA, A10 (AP) READ ILLEGAL 1 L H L H BA, CA, A10 (AP) READA ILLEGAL 1 L H L L BA, CA, A10 (AP) WRIT ILLEGAL 1 L H L L BA, CA, A10 (AP) WRITA ILLEGAL 1 L L H H BA, RA ACT ILLEGAL 1 L L H L BA, A10 (AP) PRE ILLEGAL 1 L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Refresh Mode register accessing H x x x x DESL Nop -> Enter idle after tRFC L H H H x NOP Nop -> Enter idle after tRFC L H L H BA, CA, A10 (AP) READ ILLEGAL L H L H BA, CA, A10 (AP) READA ILLEGAL L H L L BA, CA, A10 (AP) WRIT ILLEGAL L H L L BA, CA, A10 (AP) WRITA ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 (AP) PRE ILLEGAL L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL H x x x x DESL Nop -> Enter idle after tMRD L H H H x NOP Nop -> Enter idle after tMRD L H L H BA, CA, A10 (AP) READ ILLEGAL L H L H BA, CA, A10 (AP) READA ILLEGAL L H L L BA, CA, A10 (AP) WRIT ILLEGAL L H L L BA, CA, A10 (AP) WRITA ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 (AP) PRE ILLEGAL L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Preliminary Data Sheet E0323E20 (Ver. 2.0) 18 Note EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Current state /CS /RAS /CAS /WE Address Command Operation Extended Mode H x x x x DESL Nop -> Enter idle after tMRD register accessing L H H H x NOP Nop -> Enter idle after tMRD L H L H BA, CA, A10 (AP) READ ILLEGAL L H L H BA, CA, A10 (AP) READA ILLEGAL L H L L BA, CA, A10 (AP) WRIT ILLEGAL L H L L BA, CA, A10 (AP) WRITA ILLEGAL L L H H BA, RA ACT ILLEGAL L L H L BA, A10 (AP) PRE ILLEGAL L L H L A10 (AP) PALL ILLEGAL L L L H x REF ILLEGAL L L L H x SELF ILLEGAL L L L L BA, MRS-OPCODE MRS ILLEGAL L L L L BA, EMRS-OPCODE EMRS ILLEGAL Remark: H = VIH. L = VIL. x = VIH or VIL Notes: 1. This command may be issued for other banks, depending on the state of the banks. 2. All banks must be in "IDLE". 3. All AC timing specs must be met. 4. Only allowed at the boundary of 4 bits burst. Burst interruption at other timings are illegal. Preliminary Data Sheet E0323E20 (Ver. 2.0) 19 Note EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Simplified State Diagram CKEL SELFX INITALIZATION AUTO REFRESH SELF REFRESH tRFC LF SE REF CKEL PDEN PRECHARGE POWER DOWN MRS IDLE CKEH MRS EMRS PRE ACT tMRD ACTIVATING tRCD WL + BL/2 + tWR READA E PR DA REA READ E PR READ READ CKEL AD A TA RI W W RI T RE WRITE READA PRECHARGE PRE WRIT WRITA WRITA RL + BL/2 + tRTP tRP AD RE ACTIVE POWER DOWN PDEN BANK ACTIVE CKEH Automatic sequence Command sequence Simplified State Diagram Preliminary Data Sheet E0323E20 (Ver. 2.0) 20 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Operation of DDR-II SDRAM Read and write accesses to the DDR-II SDRAM are burst oriented; accesses start at a selected location and continue for the fixed burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command is used to select the bank and row to be accessed (BA0, BA1 select the bank; A0 to A13 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location for the burst access and to determine if the auto precharge command is to be issued. Prior to normal operation, the DDR-II SDRAM must be initialized. The following sections provide detailed information covering device initialization; register definition, command descriptions and device operation. Power On and Initialization DDR-II SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF (and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent damage to the device. VREF can be applied any time after VDDQ, but is expected to be nominally coincident with VTT. By attempting to maintain CKE Low, the DQ and DQS outputs are in the High-Z state during power-up. After all power supply, reference voltages, and the clocks are stable, the DDR-II SDRAM requires a 200s delay prior to applying an executable command. Once the 200s delay has been satisfied, a Deselect or NOP command should be applied, and CKE must be brought high. Issuing the NOP command during tRFC period, a Precharge ALL command must be applied. Next a mode register set command must be issued for the extended mode register, to enable the DLL. Then a mode register set command must be issued for the mode register, to reset the DLL and to program the operating parameters. 200 clock cycles are required between the DLL reset and any read command. Precharge ALL command should be applied, placing the device in the "all banks idle" state. Once in the idle state, two Auto Refresh cycles must be performed. Additionally, a mode register set command for the mode register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the DLL) must be performed. Finally, OCD impedance adjustment should be performed. At least, ERMS OCD Default command must be issued. Following these cycles, the DDR-II SDRAM is ready for normal operation. Failure to follow these steps may lead to unpredictable start-up modes. Power-Up and Initialization Sequence The following sequence is required for Power-up and Initialization. 1. Apply power and attempt to maintain CKE and ODT at a low state (all other inputs may be undefined.) Apply VDD before or at the same time as VDDQ. Apply VDDQ before or at the same time as VTT and VREF. 2. Start clock and maintain stable condition for a minimum of 200s. 3. The minimum of 200s after stable power and clock(CK, /CK), apply NOP and take CKE High. 4. Wait tRFC then issue precharge commands for all banks of the device. 5. Issue EMRS to enable DLL. (To issue "DLL Enable" command, provide Low to A0, High to BA0 and Low to all of the rest address pins, A1 to A11 and BA1) 6. Issue a mode register set command for DLL reset. The additional 200 cycles of clock input is required to lock the DLL. (To issue DLL reset command, provide High to A8 and Low to BA0) 7. Issue precharge commands for all banks of the device. 8. Issue 2 or more auto-refresh commands. 9. Issue a mode register set command with low to A8 to initialize device operation. 10. Carry out OCD impedance adjustment (Follow "OCD Flow Chart" in the chapter of Off-Chip Driver (OCD) Impedance Adjustment). At least, EMRS OCD Default Command (A9=A8=A7=1) must be issued. Whenever issue extended mode register set command for OCD, keep previous setting of A0 to A6, A0 to A13 and BA1 CK /CK CKE Command NOP PALL tRFC tMRD DLL enable PALL MRS EMRS tRP tMRD REF REF tRP tRFC MRS tRFC DLL reset EMRS tMRD OCD drive(1) 200 cycles (min) Power up and Initialization Sequence Preliminary Data Sheet E0323E20 (Ver. 2.0) 21 Any command EMRS Follow OCD Flowchart tOIT OCD calibration mode exit EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Programming the Mode Register For application flexibility, burst type, /CAS latency, DLL reset function are user defined variables and must be programmed with a Mode Register Set (MRS) command. Additionally, DLL disable function, additive /CAS latency, and variable data-output impedance adjustment are also user defined variables and must be programmed with an Extended Mode Register Set (EMRS) command. Re-executing the MRS and EMRS Commands can alter contents of the MRS and EMRS. Even though the user chooses to modify only a subset of the MRS or EMRS variables, all variables must be redefined when the MRS or EMRS commands are issued. After initial power up, the both MRS and EMRS Commands must be issued before read or write cycles may begin. All four banks must be in a precharged state and CKE must be high at least one cycle before the Mode Register Set Command can be issued. Either MRS or EMRS Commands are activated by the low signals of /CS, /RAS, /CAS and /WE at the positive edge of the clock. When the bank address 0 (BA0) is low, the DDR-II SDRAM enables the MRS command. When the bank address 0 (BA0) is high, the DDR-II SDRAM enables the EMRS command. The address input data during this cycle defines the parameters to be set as shown in the MRS and EMRS table. A new command may be issued after the mode register set command cycle time (tMRD). MRS, EMRS and Reset DLL do not affect array contents, which means reinitialization including those can be executed any time after power-up without affecting array contents. DDR-II SDRAM Mode Register Set [MRS] The mode register stores the data for controlling the various operating modes of DDR-II SDRAM. It controls /CAS latency, burst sequence, test mode, DLL reset and various vendor specific options to make DDR-II SDRAM useful for various applications. The default value of the mode register is not defined, therefore the mode register must be written after power-up for proper operation. The mode register is written by asserting low on /CS, /RAS, /CAS, /WE and BA0, while controlling the state of address pins A0 to A13. The DDR-II SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register. The mode register set command cycle time (tMRD) is required to complete the write operation to the mode register. The mode register contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state. The mode register is divided into various fields depending on functionality. Burst address sequence type is defined by A3, and, /CAS latency is defined by A4 to A6. The DDR-II doesn't support half clock latency mode. A7 is used for test mode. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. A9 to A11 are used for define Write Recovery time in clocks using for Auto Precharge. Users are required to set the appropriate values according to tWR spec and operating frequency of the systems. A12 is used for Active Power Down exit timing selection. If Slow exit is set, DLL is turned off during Active Power Down, then Asynchronous ODT timings and tXARDS timing for exit should be used. Refer to the table for specific codes. BA1 BA0 A13 A12 A11 A10 A9 0* A8 BA1 BA0 0 0* 0* A8 WR A7 A6 DLL TM A5 A4 A3 /CAS latency BT A2 A1 A0 Address field Burst length Mode register DLL reset A7 Mode A3 Burst type 0 No 0 Normal 0 Sequential 1 Yes 1 Test 1 Interleave Burst length A2 A1 A0 BL 0 1 0 4 0 1 1 8 MRS mode WR for Auto Precharge /CAS latency 0 0 MRS 0 1 EMRS(1) A11 A10 A9 WR A6 A5 A4 Latency 1 0 EMRS(2): Reserved 0 0 0 Reserved 0 0 0 Reserved 1 1 EMRS(3): Reserved 0 0 1 2 0 0 1 Reserved 0 1 0 3 0 1 0 Reserved A12 Active power down exit timing 0 1 1 4 0 1 1 3 0 Fast exit (use tXARD timing) 1 0 0 Reserved 1 0 0 4 1 Slow exit (use tXARDS timing) 1 0 1 Reserved 1 0 1 5 1 1 0 Reserved 1 1 0 Reserved 1 1 1 Reserved 1 1 1 Reserved *BA1, A12 and A13 are reserved for future use and must be programmed to 0 when setting the mode register. Mode Register Set (MRS) Preliminary Data Sheet E0323E20 (Ver. 2.0) 22 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE DDR-II SDRAM Extended Mode Register Set [EMRS] The extended mode register stores the data for enabling or disabling the DLL, output driver strength and additive latency. The default value of the extended mode register is not defined, therefore the extended mode register must be written after power-up for proper operation. The extended mode register is written by asserting low on /CS, /RAS, /CAS, /WE and High on BA0, while controlling the states of address pins A0 to A13. The DDR-II SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register. The mode register set command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register. Mode register contents can be changed using the same command and clock cycle requirements during normal operation as long as all banks are in the precharge state. A0 is used for DLL enable or disable. A1 is used for enabling a half strength data-output driver. A3 to A5 determines the additive latency, A7 to A9 are used for OCD control, A10 is used for /DQS enable and A11 is used for RDQS enable. A12 is used for Qoff (output buffers disable). DLL Enable/Disable The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon returning to normal operation after having the DLL disabled. The DLL is automatically disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any time the DLL is enabled (and subsequently reset), 200 clock cycles must occur before a Read command can be issued to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization to occur may result in a violation of the tAC or tDQSCK parameters. BA1 BA0 A13 A12 A11 A10 A9 0*1 1 0*1 A8 A7 A6 A5 A4 A3 A2 A1 A0 Qoff RDQS /DQS OCD program ODT Additive latency ODT D.I.C DLL A10 Address field Extended mode register /DQS enable A11 RDQS enable 0 Enable A0 0 Disable 1 Disable 0 Enable 1 Enable 1 Disable BA1 BA0 0 0 MRS mode A6 A2 ODT (nominal Rtt) ODT Disabled DLL enable MRS 0 0 0 1 EMRS(1) 0 1 1 0 EMRS(2): Reserved A4 A3 Latency 0 1 1 150W A5 1 EMRS(3): Reserved 0 0 0 0 1 1 Reserved 0 0 1 1 0 1 0 2 0 1 1 3 Additive latency 75W Driver impedance adjustment*2 Operation A9 A8 A7 0 0 0 OCD calibration mode exit 1 0 0 4 0 0 1 Drive(1) 1 0 1 Reserved 0 1 0 Drive(0) 1 1 0 Reserved 1 0 0 Adjust mode 1 1 1 Reserved 1 1 1 OCD calibration Default Driver strength control A12 Qoff Output Driver Driver Impedance Control Size 0 Output buffers enabled A1 1 Output buffers disabled 0 Normal 100% 1 Weak 60% *1: BA1 and A13 are reserved for future use, and must be programmed to 0 when setting the extended mode register. *2: Refer to the chapter "Off-chip Driver (OCD) impedance Adjustment" for detailed information Extended Mode Register Set (EMRS) Preliminary Data Sheet E0323E20 (Ver. 2.0) 23 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE [Pin Function Matrix for RDQS, /RDQS, /DQS] RDQS enable (A11) /DQS enable (A10) DM/ RDQS /RDQS /DQS 0(disable) 0(enable) DM High - Z /DQS 0(disable) 1(disable) DM High - Z High - Z 1(enable) 0(enable) RDQS /RDQS /DQS 1(enable) 1(disable) RDQS High - Z High - Z Off-Chip Driver (OCD) Impedance Adjustment DDR-II SDRAM supports driver calibration feature and the "OCD Flow Chart " is an example of sequence. Every calibration mode command should be followed by "OCD calibration mode exit" before any other command being issued. MRS should be set before entering OCD impedance adjustment and ODT (On Die Termination) should be carefully controlled depending on system environment. MRS should be set before entering OCD impedance adjustment and ODT should be carefully controlled depending on system environment Start EMRS: OCD calibration mode exit EMRS: Drive(1) EMRS: Drive(0) DQ & DQS High ; /DQS Low DQ & DQS Low ; /DQS High ALL OK ALL OK Test Need calibration Test Need calibration EMRS: OCD calibration mode exit EMRS: OCD calibration mode exit EMRS : EMRS : Enter Adjust Mode Enter Adjust Mode BL=4 code input to all DQs BL=4 code input to all DQs Inc, Dec, or NOP Inc, Dec, or NOP EMRS: OCD calibration mode exit EMRS: OCD calibration mode exit EMRS: OCD calibration mode exit End OCD Flow Chart Preliminary Data Sheet E0323E20 (Ver. 2.0) 24 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Extended Mode Register Set for OCD Impedance Adjustment OCD impedance adjustment can be done using the following EMRS mode. In drive mode all outputs are driven out by DDR-II SDRAM and drive of RDQS is dependent on EMRS bit enabling RDQS operation. In Drive(1) mode, all DQ, DQS (and RDQS) signals are driven high and all /DQS signals are driven low. In drive(0) mode, all DQ, DQS (and RDQS) signals are driven low and all /DQS signals are driven high. In adjust mode, BL = 4 of operation code data must be used. In case of OCD calibration default, output driver characteristics follow approximate nominal V/I curve for 18 output drivers, but are not guaranteed. If tighter control is required, which is controlled within 18 3 driver impedance range, OCD must be used. [OCD Mode Set Program] A9 A8 A7 Operation 0 0 0 OCD calibration mode exit 0 0 1 Drive (1) DQ, DQS, (RDQS) High and /DQS Low 0 1 0 Drive (0) DQ, DQS, (RDQS) Low and /DQS High 1 0 0 Adjust mode 1 1 1 OCD calibration default OCD Impedance Adjustment To adjust output driver impedance, controllers must issue the ADJUST EMRS command along with a 4bit burst code to DDR-II SDRAM as in table X. For this operation, burst length has to be set to BL = 4 via MRS command before activating OCD and controllers must drive this burst code to all DQs at the same time. DT0 in table X means all DQ bits at bit time 0, DT1 at bit time 1, and so forth. The driver output impedance is adjusted for all DDR-II SDRAM DQs simultaneously and after OCD calibration, all DQs of a given DDR-II SDRAM will be adjusted to the same driver strength setting. The maximum step count for adjustment is 16 and when the limit is reached, further increment or decrement code has no effect. The default setting may be any step within the 16 step range. [OCD Adjustment Program] 4bits burst data inputs to all DQs Operation DT0 DT1 DT2 DT3 Pull-up driver strength Pull-down driver strength 0 0 0 0 NOP NOP 0 0 0 1 Increase by 1 step NOP 0 0 1 0 Decrease by 1 step NOP 0 1 0 0 NOP Increase by 1 step 1 0 0 0 NOP Decrease by 1 step 0 1 0 1 Increase by 1 step Increase by 1 step 0 1 1 0 Decrease by 1 step Increase by 1 step 1 0 0 1 Increase by 1 step Decrease by 1 step 1 0 1 0 Decrease by 1 step Decrease by 1 step Other combinations Reserved For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1 clocks and tDS/tDH should be met as the following timing diagram. For input data pattern for adjustment, DT0 to DT3 is a fixed order and not affected by MRS addressing mode (ie.sequentialorinterleave). Preliminary Data Sheet E0323E20 (Ver. 2.0) 25 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE For proper operation of adjust mode, WL = RL - 1 = AL + CL - 1 clocks and tDS/tDH should be met as the "Output Impedance Control Register Set Cycle". For input data pattern for adjustment, DT0 to DT3 is a fixed order and not affected by MRS addressing mode (i.e. sequential or interleave). /CK CK Command EMRS NOP EMRS WL NOP tWR DQS, /DQS tDS tDH DQ_in DT0 DT1 DT2 DT3 OCD adjust mode OCD calibration mode exit Output Impedance Control Register Set Cycle Drive Mode Drive mode, both drive (1) and drive (0), is used for controllers to measure DDR-II SDRAM Driver impedance before OCD impedance adjustment. In this mode, all outputs are driven out tOIT after "Enter drive mode" command and all output drivers are turned-off tOIT after "OCD calibration mode exit" command as the "Output Impedance Measurement/Verify Cycle". /CK CK Command EMRS NOP EMRS High-Z High-Z DQS, /DQS DQs High for drive (1) DQ DQs Low for drive (0) tOIT tOIT Enter drivemode OCD Calibration mode exit Output Impedance Measurement/Verify Cycle Preliminary Data Sheet E0323E20 (Ver. 2.0) 26 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE ODT(On Die Termination) On Die Termination (ODT), is a feature that allows a DRAM to turn on/off termination resistance for each DQ, DQS, /DQS, RDQS, /RDQS, and DM signal for x 4 x 8 configurations via the ODT control pin. For x 16 configuration ODT is applied to each DQ, UDQS, /UDQS, LDQS, /LDQS, UDM, and LDM signal via the ODT control pin. The ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all DRAM devices. The ODT function is turned off and not supported in self refresh mode. VDDQ VDDQ sw2 sw1 Rval1 Rval2 DRAM input buffer Input Pin Rval1 sw1 Rval2 sw2 VSSQ VSSQ Switch sw1 or sw2 is enabled by ODT pin. Selection between sw1 or sw2 is determined by Rtt (nomial) in EMRS Termination included on all DQs, DM, DQS, /DQS, RDQS and /RDQS pins. Target Rtt ( ) = (Rval1) / 2 or (Rval2) / 2 Functional Representation of ODT Preliminary Data Sheet E0323E20 (Ver. 2.0) 27 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE DC Electrical Characteristics and Operating Conditions Parameter Symbol min Typ max Unit Notes Rtt effective impedance value for EMRS (A6, A2) = 0,1 ; 75 Rtt1(eff) 60 75 90 1 Rtt effective impedance value for EMRS (A6, A2) = 1,0 ; 150 Rtt2(eff) 120 150 180 1 Rtt mismatch tolerance between any pull-up and pull-down pair Rtt(mis) -3.75 +3.75 % 1 *1 Test Condition For Rtt Measurements Measurement Definition for Rtt(eff) Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively. Rtt(eff) = VIH(AC) - VIL(AC) I(VIH(AC)) - I(VIL(AC)) Measurement Definition for Rtt(mis) Measure voltage (Vm) at test pin (midpoint) with no load. Rtt(mis) = Notes: 1. 2 x Vm VDDQ VIH(AC), and VDDQ values defined in SSTL_18. Preliminary Data Sheet E0323E20 (Ver. 2.0) 28 - 1 x 100% EDE5104ABSE, EDE5108ABSE, EDE5116ABSE /CK T0 T1 T2 T3 T4 T5 T6 CK CKE tIS tIS ODT tAOFD tAOND Internal Term Res. Rtt tAON min. tAOF min. tAON max. tAOF max. ODT Timing for Active and Standby Mode /CK T0 T1 T2 T3 T4 T5 T6 CK CKE tIS tIS ODT tAOFPD max. tAOFPD min. Internal Term Res. Rtt tAONPD min. tAONPD max. ODT Timing for Power down Mode Preliminary Data Sheet E0323E20 (Ver. 2.0) 29 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE ODT Control of Reads At a minimum, ODT must be latched High by CK at (Read Latency - 3tCK) after the READ command and remain High until (Read Latency + BL/2 - 2tCK) after the READ command (where Read Latency = AL + CL). The controller is also required to activate its own termination with a turn on time the same as the DRAM and keeping it on until valid data is no longer on the system bus. /CK T0 T1 T2 T3 T4 T5 T6 CK Controller Term Res. Command (to slot1) Rtt (Controller) READ NOP ODT (to slot2) at DRAM in slot1 Command READ NOP DQS RL DQ out0 out1 out2 out3 at DRAM in slot2 ODT tAOFD tAOND DRAM Term Res. Rtt (DRAM) Read Example for a 2 Slot Registered System with 2nd Slot in Active Mode (Read Latency = 3tCK ; tAOND = 2tCK ; tAOFD = 2.5tCK) Preliminary Data Sheet E0323E20 (Ver. 2.0) 30 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE /CK T0 T1 T2 T3 T4 T5 T6 T7 CK Controller Term Res. Command (to slot1) Rtt (Controller) READ NOP ODT (to slot2) at DRAM in slot1 Command READ NOP DQS RL DQ out0 out1 out2 out3 at DRAM in slot2 ODT tAOFD tAOND DRAM Term Res. Rtt (DRAM) Read Example for a 2 Slot Registered System with 2nd Slot in Active Mode (Read Latency = 4tCK ; tAOND = 2tCK ; tAOFD = 2.5tCK) Preliminary Data Sheet E0323E20 (Ver. 2.0) 31 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE At a minimum, ODT must be latched High by CK at (Write Latency - 3 tCK) after the WRIT command and remain high until (Write Latency + BL/2 - 2tCK) after the WRIT command(Where Write Latency = Read Latency - 1tCK). During writes, no ODT is required at the controller. /CK T0 T1 T2 T3 T4 T5 T6 CK Controller Term Res. Command (to slot1) WRIT NOP ODT (to slot2) at DRAM in slot1 Command WRIT NOP DQS RL DQ in0 in1 in2 in3 at DRAM in slot2 ODT tAOFD tAOND DRAM Term Res. Rtt (DRAM) Write Example for a 2 Slot Registered System with 2nd Slot in Active Mode (Read Latency = 3tCK ; tAOND = 2tCK ; tAOFD = 2.5tCK) Preliminary Data Sheet E0323E20 (Ver. 2.0) 32 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE /CK T0 T1 T2 T3 T4 T5 T6 CK Controller Term Res. Command (to slot1) WRIT NOP ODT (to slot2) at DRAM in slot1 Command WRIT NOP DQS RL DQ in0 in1 in2 in3 at DRAM in slot2 ODT tAOFD tAOND DRAM Term Res. Rtt (DRAM) Write Example for a 2 Slot Registered System with 2nd Slot in Active Mode (Read Latency = 4tCK ; tAOND = 2tCK ; tAOFD = 2.5tCK) Preliminary Data Sheet E0323E20 (Ver. 2.0) 33 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Bank Activate Command [ACT] The bank activate command is issued by holding /CAS and /WE High with /CS and /RAS Low at the rising edge of the clock. The bank addresses BA0 and BA1, are used to select the desired bank. The row address A0 through A13 is used to determine which row to activate in the selected bank. The Bank activate command must be applied before any read or write operation can be executed. Immediately after the bank active command, the DDR-II SDRAM can accept a read or write command on the following clock cycle. If a R/W command is issued to a bank that has not satisfied the tRCD (min.) specification, then additive latency must be programmed into the device to delay when the R/W command is internally issued to the device. The additive latency value must be chosen to assure tRCD (min.) is satisfied. Additive latencies of 0, 1, 2, 3 and 4 are supported. Once a bank has been activated it must be precharged before another bank activate command can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The minimum time interval between successive bank activate commands to the same bank is determined by the /RAS cycle time of the device (tRC), which is equal to tRAS + tRP. The minimum time interval between successive bank activate commands to the different bank is determined by (tRRD). /CK T0 T1 T2 T3 Tn Tn+1 Tn+2 Tn+3 PRE ACT CK Command ACT Posted READ ACT Posted READ PRE tRCD(min.) Address ROW: 0 COL: 0 ROW: 1 COL: 1 ROW: 0 tCCD Additive latency (AL) tRCD =1 Bank0 Read begins tRRD tRAS tRP tRC Bank0 Active Bank1 Active Bank0 Precharge Bank1 Precharge Bank Activate Command Cycle (tRCD = 3, AL = 2, tRP = 3, tRRD = 2, tCCD = 2) Preliminary Data Sheet E0323E20 (Ver. 2.0) 34 Bank0 Active EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Read and Write Access Modes After a bank has been activated, a read or write cycle can be executed. This is accomplished by setting /RAS High, /CS and /CAS Low at the clock's rising edge. /WE must also be defined at this time to determine whether the access cycle is a read operation (/WE high) or a write operation (/WE low). The DDR-II SDRAM provides a fast column access operation. A single read or write Command will initiate a serial read or write operation on successive clock cycles. The boundary of the burst cycle is strictly restricted to specific segments of the page length. For example, the 32M bits x 4 I/O x 4 Banks chip has a page length of 2048 bits (defined by CA0 to CA9, CA11). The page length of 2048 is divided into 512 uniquely addressable boundary segments (4 bits each). A 4 bits burst operation will occur entirely within one of the 512 groups beginning with the column address supplied to the device during the read or write Command (CA0 to CA9, CA11). The second, third and fourth access will also occur within this group segment, however, the burst order is a function of the starting address, and the burst sequence. A new burst access must not interrupt the previous 4-bit burst operation. The minimum /CAS to /CAS delay is defined by tCCD, and is a minimum of 2 clocks for read or write cycles. Posted /CAS Posted /CAS operation is supported to make command and data bus efficient for sustainable bandwidths in DDR-II SDRAM. In this operation, the DDR-II SDRAM allows a /CAS read or write command to be issued immediately after the /RAS bank activate command (or any time during the /RAS-/CAS-delay time, tRCD, period). The command is held for the time of the additive latency (AL) before it is issued inside the device. The Read Latency (RL) is controlled by the sum of AL and the /CAS latency (CL). Therefore if a user chooses to issue a R/W command before the tRCD (min), then AL (greater than 0) must be written into the EMRS. The Write Latency (WL) is always defined as RL - 1 (read latency -1) where read latency is defined as the sum of additive latency plus /CAS latency (RL=AL+CL). -1 0 1 2 ACT READ 3 4 5 6 7 8 9 10 11 12 11 12 /CK CK Command NOP NOP WRIT AL = 2 WL = RL n-1 = 4 CL = 3 DQS, /DQS > tRCD = RL = AL + CL = 5 DQ out0 out1 out2 out3 in0 in1 in2 in3 > tRAC = Read followed by a write to the same bank [AL = 2 and CL = 3, RL = (AL + CL) = 5, WL = (RL - 1) = 4] -1 0 1 2 3 4 5 6 7 8 9 10 /CK CK Command ACT NOP AL = 0 READ NOP CL = 3 WRIT NOP WL = RL n-1 = 2 DQS, /DQS > tRCD = RL = AL + CL = 3 DQ out0 out1 out2 out3 > tRAC = Read followed by a write to the same bank [AL = 0 and CL = 3, RL = (AL + CL) = 3, WL = (RL - 1) = 2] Preliminary Data Sheet E0323E20 (Ver. 2.0) 35 in0 in1 in2 in3 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Burst Mode Operation Burst mode operation is used to provide a constant flow of data to memory locations (write cycle), or from memory locations (read cycle). The parameters that define how the burst mode will operate are burst sequence and burst length. DDR-II SDRAM supports 4 bits burst and 8bits burst modes only. For 8 bits burst mode, full interleave address ordering is supported, however, sequential address ordering is nibble based for ease of implementation. The burst type, either sequential or interleaved, is programmable and defined by the address bit 3 (A3) of the MRS, which is similar to the DDR-I SDRAM operation. Seamless burst read or write operations are supported. Unlike DDR-I devices, interruption of a burst read or writes operation is limited to ready by Read or Write by Write at the boundary of Burst 4. Therefore the burst stop command is not supported on DDR-II SDRAM devices. [Burst Length and Sequence] Burst length 4 8 Starting address (A2, A1, A0) Sequential addressing (decimal) Interleave addressing (decimal) 000 0, 1, 2, 3 0, 1, 2, 3 001 1, 2, 3, 0 1, 0, 3, 2 010 2, 3, 0, 1 2, 3, 0, 1 011 3, 0, 1, 2 3, 2, 1, 0 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 Note: Page length is a function of I/O organization and column addressing 32M bits x 4 organization (CA0 to CA9, CA11); Page Length = 2048 bits 16M bits x 8 organization (CA0 to CA9); Page Length = 1024 bits 8M bits x 16 organization (CA0 to CA9); Page Length = 1024 bits Preliminary Data Sheet E0323E20 (Ver. 2.0) 36 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Burst Read Command [READ] The Burst Read command is initiated by having /CS and /CAS low while holding /RAS and /WE high at the rising edge of the clock. The address inputs determine the starting column address for the burst. The delay from the start of the command to when the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The data strobe output (DQS) is driven low 1 clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst is synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with the DQS signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus /CAS latency (CL). The CL is defined by the mode register set (MRS), similar to the existing SDR and DDR-I SDRAMs. The AL is defined by the extended mode register set (EMRS). T0 T1 T2 T3 T4 T5 T6 T7 T8 T7 T8 /CK CK Command READ NOP <tDQSCK = DQS, /DQS CL = 3 RL = 3 DQ out0 out1 out2 out3 Burst Read Operation (RL = 3, BL = 4 (AL = 0 and CL = 3)) T0 T1 T2 T3 T4 T5 T6 /CK CK Command READ NOP <tDQSCK = DQS, /DQS CL = 3 RL = 3 DQ out0 out1 out2 out3 out4 out5 out6 out7 Burst Read Operation (RL = 3, BL = 8 (AL = 0 and CL = 3)) Preliminary Data Sheet E0323E20 (Ver. 2.0) 37 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK Command Posted READ NOP <tDQSCK = DQS, /DQS AL = 2 CL = 3 RL = 5 out0 out1 out2 out3 DQ Burst Read Operation (RL = 5, BL = 4 (AL = 2, CL = 3)) T0 T1 T3 T4 T5 T6 T7 T8 T9 /CK CK Command Posted READ NOP NOP Posted WRIT NOP tRTW (Read to Write = 4 clocks) DQS, /DQS RL = 5 WL = RL - 1 = 4 out0 out1 out2 out3 DQ in0 in1 in2 in3 Burst Read followed by Burst Write (RL = 5, WL = RL-1 = 4, BL = 4) The minimum time from the burst read command to the burst write command is defined by a read-to-write-turnaround-time, which is 4 clocks. T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK Command Posted READ NOP Posted READ NOP DQS, /DQS AL = 2 CL = 3 RL = 5 out0 out1 out2 out3 out4 out5 out6 DQ Seamless Burst Read Operation (RL = 5, AL = 2, and CL = 3) ) Preliminary Data Sheet E0323E20 (Ver. 2.0) 38 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Enabling a read command at every other clock supports the seamless burst read operation. This operation is allowed regardless of same or different banks as long as the banks are activated. T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 /CK CK Command NOP READ NOP READ A B DQS, /DQS RL = 4 DQ out0 out1 out2 out3 out0 out1 out2 out3 out4 out5 out6 out7 Burst interrupt is only allowed at this timing. Burst Read Interrupt by Read Preliminary Data Sheet E0323E20 (Ver. 2.0) 39 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Burst Write Command [WRIT] The Burst Write command is initiated by having /CS, /CAS and /WE low while holding /RAS high at the rising edge of the clock. The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL) minus one and is equal to (AL + CL -1). A data strobe signal (DQS) should be driven low (preamble) one clock prior to the WL. The first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The tDQSS specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the DQS until the burst length of 4 is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored. The DQ Signal is ignored after the burst write operation is complete. The time from the completion of the burst write to bank precharge is the write recovery time (tWR). T0 T1 T2 T3 T4 T5 T6 T7 T9 /CK CK Command WRIT NOP PRE NOP ACT Completion of the Burst Write <tDQSS = DQS, /DQS >tWR = WL = RL -1 = 2 in0 DQ in1 in2 >tRP = in3 Burst Write Operation (RL = 3, WL = 2, BL = 4 tWR = 2 (AL=0, CL=3)) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T11 /CK CK Command WRIT PRE NOP NOP Completion of the Burst Write <tDQSS = DQS, /DQS >tWR = WL = RL -1 = 2 DQ in0 in1 in2 in3 in4 in5 in6 in7 Burst Write Operation (RL = 3, WL = 2, BL = 8 (AL=0, CL=3)) Preliminary Data Sheet E0323E20 (Ver. 2.0) 40 >tRP = ACT EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T9 /CK CK Posted WRIT Command PRE NOP Completion of the Burst Write <tDQSS = DQS, /DQS >tWR = WL = RL -1 = 4 in0 DQ in1 in2 in3 Burst Write Operation (RL = 5, WL = 4, BL = 4 tWR = 3 (AL=2, CL=3)) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 /CK CK Write to Read = CL + 1 + tWTR (2) = 6 Command Posted READ NOP NOP DQS, /DQS AL = 2 WL = RL -1 = 4 CL = 3 RL = 5 >tWTR = in0 DQ in1 in2 in3 out0 out1 Burst Write followed by Burst Read (RL = 5, BL = 4, WL = 4, tWTR = 2 (AL=2, CL=3)) The minimum number of clock from the burst write command to the burst read command is CL + 1 + a write to-readturn-around-time (tWTR). This tWTR is not a write recovery time (tWR) but the time required to transfer the 4bit write data from the input buffer into sense amplifiers in the array. T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK Command Posted WRIT NOP Posted WRIT NOP DQS, /DQS WL = RL - 1 = 4 in 0 DQ in 1 in 2 in 3 in 4 in 5 in 6 in 7 Seamless Burst Write Operation (RL = 5, WL = 4, BL = 4) Enabling a write command every other clock supports the seamless burst write operation. This operation is allowed regardless of same or different banks as long as the banks are activated. Preliminary Data Sheet E0323E20 (Ver. 2.0) 41 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 /CK CK Command NOP WRIT NOP WRIT DQS, /DQS WL = 3 DQ in0 in1 in2 in3 in0 in1 in2 in3 in4 in5 in6 in7 Burst interrupt is only allowed at this timing. Write interrupt by Write (WL = 3, BL = 8) Preliminary Data Sheet E0323E20 (Ver. 2.0) 42 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Write data mask One write data mask (DM) pin for each 8 data bits (DQ) will be supported on DDR-II SDRAMs, Consistent with the implementation on DDR-I SDRAMs. It has identical timings on write operations as the data bits, and though used in a uni-directional manner, is internally loaded identically to data bits to insure matched system timing. DM is not used during read cycles. T1 T2 T3 T4 in in T5 T6 DQS /DQS in DQ in in in in in DM Write mask latency = 0 Data Mask Timing [tDQSS(min.)] /CK CK tWR Command WRIT NOP tDQSS DQS, /DQS DQ in0 in2 in3 DM [tDQSS(max.)] tDQSS DQS, /DQS in0 DQ in2 in3 DM Data Mask Function, WL = 3, AL = 0 shown Preliminary Data Sheet E0323E20 (Ver. 2.0) 43 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Precharge Command [PRE] The precharge command is used to precharge or close a bank that has been activated. The precharge command is triggered when /CS, /RAS and /WE are low and /CAS is high at the rising edge of the clock. The precharge command can be used to precharge each bank independently or all banks simultaneously. Three address bits A10, BA0 and BA1 are used to define which bank to precharge when the command is issued. [Bank Selection for Precharge by Address Bits] A10 BA0 BA1 Precharged Bank(s) L L L Bank 0 only L H L Bank 1 only L L H Bank 2 only L H H Bank 3 only H x x All banks 0 to 3 Remark: H: VIH, L: VIL, x: VIH or VIL Burst Read Operation Followed by Precharge Minimum read to precharge command spacing to the same bank = AL + BL/2 clocks For the earliest possible precharge, the precharge command may be issued on the rising edge that is "Additive latency (AL) + BL/2 clocks" after a Read command. A new bank active (command) may be issued to the same bank after the RAS precharge time (tRP). A precharge command cannot be issued until tRAS is satisfied. /CK T0 T1 T2 T3 T4 T5 T6 T7 T8 CK Command Posted READ NOP PRE ACT NOP NOP AL + 2 clocks DQS, /DQS AL = 1 > tRP = CL = 3 RL = 4 out0 DQ > tRAS = out1 out2 out3 CL = 3 Burst Read Operation Followed by Precharge (RL = 4, BL = 4 (AL=1, CL=3)) /CK T0 T1 T2 T3 T4 T5 T6 T7 T8 CK Command Posted READ NOP PRE ACT NOP AL + 2 clocks DQS, /DQS AL = 2 > tRP = CL = 3 RL = 5 DQ out0 > tRAS = out1 out2 out3 CL = 3 Burst Read Operation Followed by Precharge (RL = 5, BL = 4 (AL=2, CL=3)) Preliminary Data Sheet E0323E20 (Ver. 2.0) 44 NOP EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 /CK CK Command Posted READ NOP PRE NOP NOP ACT AL + BL/2 Clocks DQS, /DQS >t = RP CL = 4 AL = 2 RL = 6 out0 DQ out1 out2 out3 out4 >t = RAS(min.) Burst Read Operation Followed by Precharge (RL = 6 (AL=2, CL=4, BL=8)) Preliminary Data Sheet E0323E20 (Ver. 2.0) 45 out5 out6 out7 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Burst Write followed by Precharge Minimum Write to Precharge Command spacing to the same bank = WL + BL/2 clocks + tWR For write cycles, a delay must be satisfied from the completion of the last burst write cycle until the precharge command can be issued. This delay is known as a write recovery time (tWR) referenced from the completion of the burst write to the precharge command. No precharge command should be issued prior to the tWR delay, as DDR-II SDRAM allows the burst interrupt operation only Read by Read or Write by Write at the boundary of burst 4. T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK Command Posted WRIT NOP PRE > = tWR DQS, /DQS WL = 3 in0 DQ in1 in2 in3 Completion of the Burst Write Burst Write followed by Precharge (WL = (RL-1) =3) T0 T1 T2 T3 T4 T5 T6 T7 T9 /CK CK Command Posted WRIT NOP PRE > tWR = DQS, /DQS WL = 4 in0 DQ in1 in2 in3 Completion of the Burst Write Burst Write followed by Precharge (WL = (RL-1) = 4) Preliminary Data Sheet E0323E20 (Ver. 2.0) 46 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T11 /CK CK Command WRIT PRE NOP NOP Completion of the Burst Write <tDQSS = DQS, /DQS >tWR = WL = RL -1 = 2 DQ in0 in1 in2 in3 in4 in5 in6 in7 Burst Write followed by Precharge (WL = (RL-1) = 4,BL= 8) Preliminary Data Sheet E0323E20 (Ver. 2.0) 47 >tRP = ACT EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Auto-Precharge Operation Before a new row in an active bank can be opened, the active bank must be precharged using either the precharge command or the auto-precharge function. When a read or a write command is given to the DDR-II SDRAM, the /CAS timing accepts one extra address, column address A10, to allow the active bank to automatically begin precharge at the earliest possible moment during the burst read or write cycle. If A10 is low when the read or write Command is issued, then normal read or write burst operation is executed and the bank remains active at the completion of the burst sequence. If A10 is high when the Read or Write Command is issued, then the autoprecharge function is engaged. During auto-precharge, a read Command will execute as normal with the exception that the active bank will begin to precharge on the rising edge which is /CAS latency (CL) clock cycles before the end of the read burst. Auto-precharge can also be implemented during Write commands. The precharge operation engaged by the Auto precharge command will not begin until the last data of the burst write sequence is properly stored in the memory array. This feature allows the precharge operation to be partially or completely hidden during burst read cycles (dependent upon /CAS latency) thus improving system performance for random data access. The /RAS lockout circuit internally delays the Precharge operation until the array restore operation has been completed so that the auto precharge command may be issued with any read or write command. Burst Read with Auto Precharge [READA] If A10 is high when a Read Command is issued, the Read with Auto-Precharge function is engaged. The DDR-II SDRAM starts an auto Precharge operation on the rising edge which is (AL + BL/2) cycles later from the read with AP command when the condition that. When tRAS (min) is satisfied. If tRAS (min.) is not satisfied at the edge, the start point so auto-precharge operation will be delayed until tRAS (min.) is satisfied. A new bank active (command) may be issued to the same bank if the following two conditions are satisfied simultaneously. (1) The /RAS precharge time (tRP) has been satisfied from the clock at which the auto precharge begins. (2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied. T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK A10 = 1 Command Posted READ NOP ACT > tRAS(min.) = DQS, /DQS > tRP = AL = 2 CL = 3 RL = 5 out0 DQ out1 out2 out3 CL = 3 > = tRC Auto precharge begins Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRC limit) (RL = 5, BL = 4 (AL = 2, CL = 3, internal tRCD = 3)) Preliminary Data Sheet E0323E20 (Ver. 2.0) 48 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T1 T2 T3 T4 T5 T6 T7 T8 /CK CK A10 = 1 Command Posted READ ACT NOP NOP > = tRAS(min.) DQS, /DQS > tRP = AL = 2 CL = 3 RL = 5 out0 DQ out1 out2 out3 CL = 3 > tRC = Auto precharge begins Burst Read with Auto Precharge Followed by an Activation to the Same Bank (tRP limit) (RL = 5, BL = 4 (AL = 2, CL = 3, internal tRCD = 3) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 /CK CK A10 = 1 Command NOP READ ACT tRAS (min.) DQS, /DQS AL = 2 CL = 3 tRP RL = 5 out0 out1 out2 out3 out4 out5 out6 out7 DQ tRC Auto Precharge begins. Burst Read with Auto Precharge Followed by an Activation to the Same Bank (RL = 5, BL = 8 (AL = 2, CL = 3) Preliminary Data Sheet E0323E20 (Ver. 2.0) 49 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Burst Write with Auto-Precharge [WRITA] If A10 is high when a write command is issued, the Write with auto-precharge function is engaged. The DDR-II SDRAM automatically begins precharge operation after the completion of the burst writes plus write recovery time (tWR). The bank undergoing auto-precharge from the completion of the write burst may be reactivated if the following two conditions are satisfied. (1) The data-in to bank activate delay time (tWR + tRP) has been satisfied. (2) The /RAS cycle time (tRC) from the previous bank activation has been satisfied. T0 T1 T2 T3 T4 T5 T6 T7 T12 /CK CK Command A10 = 1 Posted WRIT NOP ACT DQS, /DQS > tWR = WL = RL -1 = 2 in0 DQ in1 in2 > tRP = in3 > tRC = Completion of the Burst Write Auto Precharge Begins Burst Write with Auto-Precharge (tRC Limit) (WL = 2, tWR =2, tRP=3) T0 T3 T4 T5 T6 T7 T8 T9 T10 /CK CK Command A10 = 1 Posted WRIT NOP NOP ACT DQS, /DQS > tWR = WL = RL -1 = 4 in0 DQ in1 in2 in3 > tRC = Completion of the Burst Write Auto Precharge Begins Burst Write with Auto-Precharge (tWR + tRP) (WL = 4, tWR =2, tRP=3) Preliminary Data Sheet E0323E20 (Ver. 2.0) 50 > tRP = EDE5104ABSE, EDE5108ABSE, EDE5116ABSE T0 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 /CK CK A10 = 1 Command NOP WRIT ACT DQS, /DQS tWR tRP WL = RL - 1 = 4 in0 in1 in2 in3 in4 in5 in6 in7 DQ tRC Auto Precharge begins. Burst Write with Auto Precharge Followed by an Activation to the Same Bank (WL = 4, BL = 8, tWR = 2, tRP = 3) Preliminary Data Sheet E0323E20 (Ver. 2.0) 51 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Refresh Requirements DDR-II SDRAM requires a refresh of all rows in any rolling 64 ms interval. Each refresh is generated in one of two ways: by an explicit Automatic Refresh command, or by an internally timed event in Self Refresh mode. Dividing the number of device rows into the rolling 64 ms interval defines the average refresh interval, tREFI, which is a guideline to controllers for distributed refresh timing. Automatic Refresh Command (/CAS Before /RAS Refresh) [REF] When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the clock, the chip enters the Automatic Refresh mode (CBR). All banks of the DDR-II SDRAM must be precharged and idle for a minimum of the Precharge time (tRP) before the Auto Refresh Command (CBR) can be applied. An address counter, internal to the device, supplies the bank address during the refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has completed, all banks of the DDR-II SDRAM will be in the precharged (idle) state. A delay between the Auto Refresh Command (CBR) and the next Activate Command or subsequent Auto Refresh Command must be greater than or equal to the Auto Refresh cycle time (tRFC). The DDR-II SDRAM requires Automatic Refresh cycles at an average periodic interval of tREFI (maximum). A maximum of eight Automatic Refresh commands can be posted to any given DDR-II SDRAM, and the maximum absolute interval between any Auto Refresh command and the next Auto Refresh command is 8 x tREFI. T0 T1 T2 T3 T15 T7 T8 /CK CK High > tRP = CKE Command PRE > tRFC = > tRFC = NOP CBR CBR NOP Any Command Automatic Refresh Command Self Refresh Command [SELF] The DDR-II SDRAM device has a built-in timer to accommodate Self Refresh operation. The self refresh command is defined by having /CS, /RAS, /CAS and CKE held low with /WE high at the rising edge of the clock. Once the Command is registered, CKE must be held low to keep the device in self refresh mode. When the SDRAM has entered self refresh mode all of the external control signals, except CKE, are disabled. The clock is internally disabled during self refresh operation to save power. The user may halt the external clock while the device is in Self Refresh mode, however, the clock must be restarted before the device can exit self refresh operation. Once the clock is cycling, the exit command will be registered asynchronously by bringing CKE high. After CKE is brought high, an internal timer is started to insure CKE is held high for approximately 10ns before registering the self refresh exit command. The purpose of this circuit is to filter out noise glitches on the CKE input that may cause the DDR-II SDRAM to erroneously exit self refresh operation. Once the self refresh command is registered, a delay equal or longer than the tXSC must be satisfied before any command can be issued to the device. CKE must remain high for the entire Self Refresh exit period (tXSC) and commands must be gated off with /CS held High. Alternatively, NOP commands may be registered on each positive clock edge during the self refresh exit interval. (Self Refresh Command) T0 T1 T2 T3 Tm Tn Tn+1 /CK CK => tXSC CKE Command SELF NOP Any Command : VIH or VIL Self Refresh Command Preliminary Data Sheet E0323E20 (Ver. 2.0) 52 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Power-Down [PDEN] Power-down is entered when CKE is registered (no accesses can be in progress). If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active power-down. Entering power-down deactivates the input and output buffers, excluding CK, /CK and CKE. In power down mode, CKE Low and a stable clock signal must be maintained at the inputs of the DDR-II SDRAM, and all other input signals are "VIH or VIL". Power-down duration is limited by the refresh requirements of the device. The power-down state is synchronously exited when CKE is registered High (along with a NOP or DESL). A valid, executable command may be applied after satisfied tXPRD or tXARD for read command exiting form precharge power-down or active power-down respectively ,and after satisfied tXPNR for non-read command. /CK CK tIS tIS CKE VALID Command NOP NOP No column access in progress Enter power down mode (Burst read or write operation must not be in progress) VALID tXPRD, tXPNR Exit tXARD power down mode : VIH or VIL Power Down Burst Interruption Interruption of a burst read or write cycle is prohibited. No Operation Command [NOP] The no operation command should be used in cases when the DDR-II SDRAM is in an idle or a wait state. The purpose of the no operation command is to prevent the DDR-II SDRAM from registering any unwanted commands between operations. A no operation command is registered when /CS is low with /RAS, /CAS, and /WE held high at the rising edge of the clock. A no operation command will not terminate a previous operation that is still executing, such as a burst read or write cycle. Deselect Command [DESL] The deselect command performs the same function as a no operation command. Deselect Command occurs when /CS is brought high at the rising edge of the clock, the /RAS, /CAS, and /WE signals become don't cares. Preliminary Data Sheet E0323E20 (Ver. 2.0) 53 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE Package Drawing 64-ball FBGA ( BGA) (TBD) Solder ball: Lead free (Sn-Ag-Cu) 80-ball FBGA ( BGA) (TBD) Solder ball: Lead free (Sn-Ag-Cu) Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the EDE51XXABSE. Type of Surface Mount Device EDE51XXABSE: 64-ball FBGA (BGA) , 80-ball FBGA (BGA) < Lead free (Sn-Ag-Cu) > Preliminary Data Sheet E0323E20 (Ver. 2.0) 54 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Preliminary Data Sheet E0323E20 (Ver. 2.0) 55 EDE5104ABSE, EDE5108ABSE, EDE5116ABSE BGA is a registered trademark of Tessera, Inc. The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Preliminary Data Sheet E0323E20 (Ver. 2.0) 56