Order this document by BC635/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 635 BC 637 BC 639 Unit Collector - Emitter Voltage VCEO 45 60 80 Vdc Collector - Base Voltage VCBO 45 60 80 Vdc Emitter - Base Voltage VEBO 5.0 Vdc Collector Current -- Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg - 55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W Rating Operating and Storage Junction Temperature Range 3 CASE 29-04, STYLE 14 TO-92 (TO-226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 45 60 80 -- -- -- -- -- -- 45 60 80 -- -- -- -- -- -- 5.0 -- -- Vdc -- -- -- -- 100 10 nAdc Adc OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CEO BC635 BC637 BC639 Vdc V(BR)CBO BC635 BC637 BC639 Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) V(BR)EBO Vdc ICBO 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max 25 40 40 40 25 -- -- -- -- -- -- 250 160 160 -- Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 (IC = 500 mA, VCE = 2.0 V) -- Collector - Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) -- -- 0.5 Vdc Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) -- -- 1.0 Vdc fT -- 200 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob -- 7.0 -- pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib -- 50 -- pF DYNAMIC CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 100 50 PD TC 25C 20 10 5 1 1 100 BC635 BC637 BC639 PD TA 25C PD TC 25C 2 200 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 0.8 V, VOLTAGE (VOLTS) f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 V, TEMPERATURE COEFFICIENTS (mV/C) Figure 3. Current-Gain -- Bandwidth Product 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 4. "Saturation" and "On" Voltages -0.2 -1.0 VCE = 2 VOLTS T = 0C to +100C -1.6 V for VBE -2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 5. Temperature Coefficients Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. 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