1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol BC
635 BC
637 BC
639 Unit
Collector–Emitter Voltage VCEO 45 60 80 Vdc
Collector–Base Voltage VCBO 45 60 80 Vdc
Emitter–Base Voltage VEBO 5.0 Vdc
Collector Current — Continuous IC0.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watt
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0) BC635
BC637
BC639
V(BR)CEO 45
60
80
—
—
—
—
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 µAdc, IE = 0) BC635
BC637
BC639
V(BR)CBO 45
60
80
—
—
—
—
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 5.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ICBO —
——
—100
10 nAdc
µAdc
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
Order this document
by BC635/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
2
3
BASE
1
EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc) BC635
BC637
BC639
(IC = 500 mA, VCE = 2.0 V)
hFE 25
40
40
40
25
—
—
—
—
—
—
250
160
160
—
—
Collector–Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) — — 0.5 Vdc
Base–Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) — — 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) fT— 200 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 — pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 50 — pF
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
V, VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
1000
1
2
5
10
20
50
100
200
500
1001 2 3 4 5 7 10 20 30 40 50 70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC635
BC637
BC639
PD TA 25
°
C
PD TC 25
°
C
SOA = 1S
PD TC 25
°
C
PD TA 25
°
C
500
200
100
50
20 1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = 2 V
500
300
100
50
20 1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current–Gain — Bandwidth Product
VCE = 2 V
1
0.8
0.6
0.4
0.2
01 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. “Saturation” and “On” Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 2 V
VCE(sat) @ IC/IB = 10
–0.2
–1.0
–2.2
–1.6
1 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = 2 VOLTS
∆
T = 0
°
C to +100
°
C
θ
V for VBE
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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