SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E B *Complementary to MMBTA06 L D L H 1 MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA PC * 350 mW Junction Temperature Tj 150 Storage Temperature Tstg -55150 3 G A 2 Q Collector Power Dissipation P K J N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * : Package Mounted On 99.5% Alumina 10x8x0.6mm. Marking Lot No. ANX Type Name ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-80V, IE=0 - - -100 nA Emitter Cut-off Current ICEO VCE=-60V, IB=0 - - -100 nA V(BR)CEO IC=-1mA, IB=0 -80 - - V hFE(1) VCE=-1V, IC=-10mA 100 - - hFE(2) VCE=-1V, IC=-100mA 100 - - VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V Transition Frequency fT VCE=-1V, IC=-100mA 50 - - MHz - 14 - pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Collector Output Capacitance 2005. 11. 14 Revision No : 3 Cob VCB=-10V, IE=0, f=1MHz 1/2 MMBTA56 2005. 11. 14 Revision No : 3 2/2