2005. 11. 14 1/2
SEMICONDUCTOR
TECHNICAL DATA
MMBTA56
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-500 mA
Emitter Current IE500 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Tstg -55～150 ℃
* : Package Mounted On 99.5% Alumina 10×8×0.6mm.
Type Name
Marking
Lot No.
ANX
AUDIO FREQUENCY AMPLIFIER APPLICATIONS.
FEATURE
·Complementary to MMBTA06
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-80V, IE=0 -- -100 nA
Emitter Cut-off Current ICEO VCE=-60V, IB=0 -- -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -80 - - V
DC Current Gain
hFE(1) VCE=-1V, IC=-10mA 100 - -
hFE(2) VCE=-1V, IC=-100mA 100 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V
Transition Frequency fTVCE=-1V, IC=-100mA 50 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 14 - pF
2005. 11. 14 2/2
MMBTA56
Revision No : 3
