MJ11021 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 "  

 !  

. . . designed for use as general purpose amplifiers, low frequency switching and

motor control applications.

•High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)

•Collector–Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) – MJ11018, 17

VCEO(sus) = 250 Vdc (Min) – MJ11022, 21

•Low Collector–Emitter Saturation

VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

•Monolithic Construction

•100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎ

Symbol

ÎÎÎÎ

MJ11018

MJ11017

ÎÎÎÎ

MJ11022

MJ11021

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎ

VCEO

ÎÎÎÎ

150

ÎÎÎÎ

250

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎ

VCB

ÎÎÎÎ

150

ÎÎÎÎ

250

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎ

VEB

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current —

Continuous Peak

ÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎ

ÎÎÎÎÎÎÎ

0.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate Above 25

ÎÎÎ

ÎÎÎÎÎÎÎ

175

1.16

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +175

–65 to +200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.86

ÎÎÎ

C/W

(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle

10%.

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (

50 75 100 125 200

200

PD, POWER DISSIPATION (WATTS)

100

0 150 17525

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ11017/D

 Motorola, Inc. 1995









30 AMPERE

DARLINGTON

POWER TRANSISTORS

COMPLEMENTARY

SILICON

60–120 VOLTS

200 WATTS

*Motorola Preferred Device





 

CASE 1–07

TO–204AA

(TO–3)

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0. 1 Adc, IB = 0) MJ11017, MJ11018

MJ11021, MJ11022

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

150

250

ÎÎÎÎ

—

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 75, IB = 0) MJ11017, MJ11018

(VCE = 125, IB = 0) MJ11021, MJ11022

ÎÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

0.5

5.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

hFE

ÎÎÎÎ

400

100

ÎÎÎÎ

15,000

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 10 Adc, IB = 100 mA)

(IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

3.4

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

IC = 10 A, VCE = 5.0 Vdc)

ÎÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 15 Adc, IB = 150 mA)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.8

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain Bandwidth Product

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

[hfe]

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎÎ

Mhz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJ11018, MJ11022

MJ11017, MJ11021

ÎÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

400

600

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

Typical

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

NPN

ÎÎÎÎ

PNP

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

150

ÎÎÎÎ

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

1.2

ÎÎÎÎ

0.5

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 100 V, IC = 10 A, IB = 100 mA

VBE(off) = 50 V) (See Figure 2.)

ÎÎÎÎÎ

ÎÎÎÎ

4.4

ÎÎÎÎ

2.7

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎ

10.0

ÎÎÎÎ

2.5

ÎÎÎÎ

µs

(1) Pulsed Test: Pulse Width = 300 µs, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

APPROX

+12 V

APPROX

–8.0 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

VCC

100 V

RCSCOPE

TUT

+4.0 V

≈

10 K

≈

8.0

for td and tr, D1 is disconnected

and V2 = 0

For NPN test circuit reverse diode and voltage polarities.

   

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1.0

0.01

0.1

r(t), EFFECTIVE TRANSIENT THERMAL

1.0 1.0 100

JC(t) = r(t) R

JC(t) = 0.86

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

SINGLE PULSE

RESISTANCE (NORMALIZED)

1000

D = 0.5

0.2

0.05

DUTY CYCLE, D = t1/t2

Figure 3. Thermal Response

0.05

0.03

0.02

0.07

0.5

0.3

0.2

0.7

0.02 0.03 0.05 0.2 0.3 0.5 2.0 3.0 5.0 200 300 50010 20 30 50

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0 10 20 2003.0 50 100

Figure 4. Maximum Rated Forward Bias Safe

Operating Area (FBSOA)

0.3

0.2

0.5

7.0 30 70 150

0.1 ms

3.0

2.0

1.0

5.0

IC, COLLECTOR CURRENT (AMPS)

TJ = 175

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25

SINGLE PULSE

0.5 ms

1.0 ms

5.0 ms

MJ11017, 18

MJ11021, 22

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 175

C, TC is

variable dependIng on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

175

C. TJ(pk) may be calculated from the data in Figure 3.

At high case temperatures thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

20 100 140 2600 180 22060

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum RBSOA, Reverse Bias Safe

Operating Area

IC, COLLECTOR CURRENT (AMPS)

L = 200

IC/IB1

≥

TC = 25

VBE(off) 0 – 5.0 V

RBE = 47

Ω

DUTY CYLE = 10%

MJ11017, 18

MJ11021, 22

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be hold to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 5 gives ROSOA characteristics.

   

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

COLLECTOR CURRENT (AMPS)

4.0

0.1

3.0

2.5

1.5

3.5

2.0

1.0

0.5 0.7 1.0 2.0 3.0 5.0 107.0 503020 70

4.0

3.0

2.5

1.5

3.5

2.0

1.0

0.5

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (A)IC, COLLECTOR CURRENT (A)

hFE, DC CURRENT GAIN

Figure 6. DC Current Gain

Figure 7. Collector Saturation Region

IB, BASE CURRENT (mA)

7000

5000

10,000

0.3 0.5 1.0 200.2

3000

2000

1000

700

500

300

200

0.7

COLLECTOR CURRENT (AMPS)

Figure 8. “On” Voltages

VBE(sat) @ IC/IB = 100

VCE = 5.0 Vdc

100 3.0 5.0 107.0 152.0

20,000

10,000

30,000

2000

1000

700

500

300

TJ = 25

TJ = 150

TJ = – 55

7000

5000

3000

VOLTAGE (VOLTS)

4.0

0.5 IB, BASE CURRENT (mA) 500

3.0

2.5

1.5

3.5

2.0

1.0

0.5 300200

0.7 1.0 2.0 3.0 5.0 107.0 503020 10070

IC = 5.0 A

TJ = 25

IC = 15 A

0.2 0.3 0.5

TJ = 25

VBE @ VCE = 5.0 V

VCE(sat) @ IC/IB = 100

VOLTAGE (VOLTS)

PNP NPN

0.3 0.5 1.0 200.2 0.7 3.0 5.0 107.0 152.0

VCE = 5.0 Vdc

TJ = 150

TJ = 25

CTJ = – 55

IC = 10 A

4.0

0.5 500

3.0

2.5

1.5

3.5

2.0

1.0

0.5 300200

0.7 1.0 2.0 3.0 5.0 107.0 503020 10070

TJ = 25

IC = 5.0 A

IC = 15 A

IC = 10 A

0.1 0.7 1.0 2.0 3.0 5.0 107.0 5030200.2 0.3 0.5

TJ = 25

VBE(sat) @ IC/IB = 100

VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

   

6 Motorola Bipolar Power Transistor Device Data

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

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MJ11017/D

*MJ11017/D*

◊