TO-220 Plastic-Encapsulate Transistors 4& @Q ~ 60 3DD13005 TRANSISTOR(NPN) FEATURES of TO-220 1.BASE 2.COLLECTOR 3.EMITTER Vericso: FOO V SS ee eee nection temperature range wo EES See _ NO- Ts, Tstg: -55C to + 150T ELECTRICAL CHARACTERISTICS (Tamb=25C unless otherwise specified) Collector-base breakdown voltage ViBR)}CBO Ic= 1mA, le=0 700 Vv Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, Is=0 400 | Vv Emitter-base breakdown voltage ViBR)EBO le= 1mA, Ic=0 9 Vv Collector cut-off current Icao Ves= 700 V, le=0 1 mA Collector cut-off current IcEo Vce= 400 V, In=0 100 BA Emitter cut-off current leBo Ves= 9 V, Ic=0 1 | mA DC current gain . hre Vce= 5 V,ic= 1A 10 40 Collector-emitter saturation voltage VcEsat Ic= 2A, lee 500 mA 0.6 V Base-emitter saturation voltage . VBEsat Ic= 2A, In= 500 mA 1.6 V Vce= 10 V, ic= 500 mA - Transition frequency fr 5 MHz f =1MHz Fail time | t l= 2A, ter= -teo= 0.4 A, 0.9 us Storage time te Vec=120V | 4 ns CLASSIFICATION OF hRWre Rank Range 10-15 15-20 20-25 25-30 30-35 35-40Typical Characteristics 100 70 z 50 3 = 30 Cc S a 20 Q Oo wi = 10 Vee = 2V TTT Veg =5V 0.04 0.06 0.1 0.2 0.4 0.6 1 Ic, COLLECTOR CURRENT (AMP) DC Current Gain 1.3 Veesat @ Io/lg = 4 ip, ~~ (Ver @ Vee =2V 09 Ty = -85C 07 25C 05 Vpg, BASE-EMITTER VOLTAGE (VOLTS) 150C 0.3 0.04 0.06 0.1 0.2 0.4 0.6 1 Ic, COLLECTOR CURRENT (AMP) BaseEmitter Voltage 10k Voce = 250 V Ss 1k Ty = 150C tu ac = 100 125C oO Fs 100C i 10 o oO i 50C oS ot REVERSE FORWARD -0.4 -0.2 0 +0.2 Vee, BASE-EMITTER VOLTAGE (VOLTS) Collector Cutoff Region 3DD13005 Voge, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0 0.03 = 0.05 0.41 02 03 #05 07 1 2 3 , lp, BASE CURRENT (AMP) Collector Saturation Region 0.55 0.45 2 a , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) & 0.15 VCE (sat) 0.05 0.04 0.06 0.1 0.2 04 0.6 1 2 4 Ic, COLLECTOR CURRENT (AMP) CollectorEmitter Saturation Voltage C, CAPACITANCE (pF) 0.3 05 #13 ~=5 10 = 30 50 100 300 Vp. REVERSE VOLTAGE (VOLTS} Capacitance . 61