2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 -4 to -10 30 5 4 2N/PN/SST4392 -2 to -5 60 5 4 2N/PN/SST4393 -0.5 to -3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 4391<30 D Fast Switching--tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss D D D D D D D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Commutators DESCRIPTION The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applications and for specialized amplifier circuits. TO-206AA (TO-18) The 2N series hermetically-sealed TO-206AA (TO-18) can is available with processing per MIL-S-19500 (see Military Information). Both the PN, TO-226AA (TO-92), and SST, TO-236 (SOT-23), series are available in tape-and-reel for automated assembly (see Packaging Information). For similar dual products, see the 2N5564/5565/5566 data sheet. TO-226AA (TO-92) S D 1 S 2 1 TO-236 (SOT-23) D 3 S 2 3 D G 1 G 2 3 G and Case Top View Top View Top View 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 (CA)* SST4392 (CB)* SST4393 (CC)* *Marking Code for TO-236 For applications information see AN104 and AN106 . Document Number: 70241 S-04028--Rev. F, 04-Jan-01 www.vishay.com 7-1 2N/PN/SST4391 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage: (2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . -40 V (SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . -35 V Operating Junction Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . -55 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Power Dissipation : Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature : (2N Prefix)a . . . . . . . . . . (TC = 25_C) 1800 mW (PN/SST Prefixes)b . . . . . . . . . . . . . . . 350 mW Notes a. Derate 10 mW/_C above 25_C b. Derate 2.8 mW/_C above 25_C (2N Prefix) . . . . . . . . . . . . . . . . . . -65 to 200 _C (PN/SST Prefixes) . . . . . . . . . . . -55 to 150 _C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4391 Parameter Symbol Test Conditions Typa V(BR)GSS IG = -1 A, VDS = 0 V -55 Min -40 4392 Max Min 4393 Max Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb VGS(off) IDSS VDS = 20 V 2N/PN: ID = 1 nA VDS = 15 V SST: ID = 10 nA VDS = 20 V, VGS = 0 V VGS = -20 V VDS = 0 V Gate Reverse Current Gate Operating Current IGSS IG ID(off) VDS = 20 V TA = 150_C VDS = 20 V TA = 100_C VDS = 10 V TA = 125_C Drain-Source On-Voltage VDS(on) VGS = 0 V -2 -5 -0.5 -3 50 150 25 75 5 30 50 150 25 100 5 60 SST 50 25 2N/SST -5 -100 -100 -100 PN -5 -1000 -1000 -1000 -13 -200 -200 -200 -1 -200 -200 -200 SST: TA = 125_C -3 5 2N: VGS = -7 V 5 5 PN: VGS = -5 V 0.005 PN: VGS = -7 V 0.005 PN: VGS = -12 V 0.005 1 5 100 2N: VGS = -5 V 13 2N: VGS = -7 V 13 2N: VGS = -12 V 13 PN: VGS = -5 V 1 PN: VGS = -7 V 1 PN: VGS = -12 V 1 SST: VGS = -10 V 3 ID = 3 mA 0.25 ID = 6 mA 0.3 ID = 12 mA 0.35 VGS(F) IG = 1 mA VDS = 0 V nA 100 2N 0.7 PN/SST 0.7 pA 100 2N: VGS = -12 V Gate-Source Forward Voltage pA -5 2N: VGS = -5 V VGS = 0 V, ID = 1 mA mA 5 2N: TA = 150_C rDS(on) 7-2 -10 PN: TA = 100_C Drain-Source On-Resistance www.vishay.com V -4 2N SST VDS = 10 V, VGS = -10 V Drain Cutoff Current -40 PN VDG = 15 V, ID = 10 mA VDS = 20 V -40 100 1 1 100 nA 100 pA 200 200 200 200 nA 200 200 0.4 0.4 V 0.4 30 60 100 1 1 1 V Document Number: 70241 S-04028--Rev. F, 04-Jan-01 2N/PN/SST4391 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits 4391 Parameter Symbol Typa Test Conditions Min 4392 Max Min 4393 Max Min Max Unit Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs 6 mS 25 S VDS = 20 V, ID = 1 mA, f = 1 kHz gos rDS(on) Ciss Crss en VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = 20 V, VGS = 0 V f = 1 MHz VDS = 0 V f = 1 MHz 30 60 100 2N 12 14 14 14 PN 12 16 16 16 SST 13 2N: VGS = -5 V 3.3 2N: VGS = -7 V 3.2 2N: VGS = -12 V 2.8 PN: VGS = -5 V 3.5 PN: VGS = -7 V 3.4 PN: VGS = -12 V 3.0 SST: VGS = -5 V 3.6 SST: VGS = -7 V 3.5 SST: VGS = -12 V 3.1 VDS = 10 V, ID = 10 mA f = 1 kHz 3.5 3.5 3.5 5 pF 5 5 nV Hz 3 Switching td(on) Turn-On Time tr td(off) Turn-Off Time tf VDD = 10 V VGS(H) = 0 V See Switching Circuit 2N/PN 2 SST 2 2N/PN 2 SST 2 2N/PN 6 SST 6 2N/PN 13 SST 13 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 s duty cycle v3%. Document Number: 70241 S-04028--Rev. F, 04-Jan-01 15 15 15 5 5 5 20 35 50 15 20 30 ns NCB www.vishay.com 7-3 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 V IDSS @ VDS = 20 V, VGS = 0 V TA = 25_C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 On-Resistance vs. Drain Current 100 200 IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 tr approximately independent of ID VDD = 5 V, RG = 50 W VGS(L) = -10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 tr Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) 200 120 VGS(off) = -2 V 80 -4 V -8 V 40 0 -55 -35 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 0 -15 5 65 25 45 TA - Temperature (_C) 85 105 0 125 Turn-Off Switching 30 -10 f = 1 MHz VDS = 0 V 24 18 Capacitance (pF) 24 Switching Time (ns) -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) Capacitance vs. Gate-Source Voltage 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V VGS(off) = -2 V tf 12 18 12 td(off) Ciss 6 6 VGS(off) = -8 V Crss 0 0 0 www.vishay.com 7-4 100 2 4 6 ID - Drain Current (mA) 8 10 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 Document Number: 70241 S-04028--Rev. F, 04-Jan-01 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output onductance vs. Gate-Source Cutoff Voltage* Noise Voltage vs. Frequency 100 50 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz Hz en - Noise Voltage nV / 10 ID = 1 mA ID = 10 mA 1 10 100 1k f - Frequency (Hz) 10 k 40 400 gfs 30 200 10 100 0 VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA 1 mA 10 pA 10 mA 0 10 1 mA 100 pA -10 gig big (mS) IG - Gate Leakage) 1 nA -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 100 IGSS @ 125_C TA = 125_C -2 Common-Gate Input Admittance Gate Leakage Current 10 nA 200 20 0 100 k gos gos - Output Conductance (S) gfs - Forward Transconductance (mS) VDS = 10 V IGSS @ 25_C 1 TA = 25_C 1 pA IG(on) @ ID 0.1 pA 0.1 0 6 12 18 24 VDG - Drain-Gate Voltage (V) 100 30 Common-Gate Forward Admittance 100 VDG = 10 V ID = 10 mA TA = 25_C bfg 1.0 10 (mS) gfg (mS) 1000 Common-Gate Reverse Admittance 10 VDG = 10 V ID = 10 mA TA = 25_C -gfg 200 500 f - Frequency (MHz) -brg -grg +grg 0.1 1 0.01 0.1 100 Document Number: 70241 S-04028--Rev. F, 04-Jan-01 200 500 f - Frequency (MHz) 1000 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-5 2N/PN/SST4391 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transconductance vs. Drain Current Common-Gate Output Admittance 100 100 VGS(off) = -2 V gfs - Forward Transconductance (mS) VDG = 10 V ID = 10 mA TA = 25_C bog (mS) 10 gog 1 0.1 TA = -55_C 25_C 10 125_C 1 100 200 500 0.1 1000 1.0 10 ID - Drain Current (mA) f - Frequency (MHz) Output Characteristics Transfer Characteristics 100 100 VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V 80 ID - Drain Current (mA) 80 ID - Drain Current (mA) VDS = 10 V f = 1 kHz VGS = 0 V 60 -0.5 V 40 -1.0 V -1.5 V 20 TA = -55_C 60 25_C 40 20 -2.0 V 125_C -2.5 V 0 0 0 2 4 6 10 8 0 -1 VDS - Drain-Source Voltage (V) -2 -3 -4 -5 VGS - Gate-Source Voltage (V) VDD RL SWITCHING TIME TEST CIRCUIT 4391 OUT 4392 4393 VGS(L) -12 V -7 V -5 V RL* 800 1600 3000 ID(on) 12 mA 6 mA 3 mA VGS(H) VGS(L) 1 k 51 *Non-inductive INPUT PULSE SAMPLING SCOPE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M Input Capacitance 1.5 pF VIN Scope 51 See Typical Characteristics curves for changes. www.vishay.com 7-6 Document Number: 70241 S-04028--Rev. F, 04-Jan-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1