CPV364M4K - International Rectifier

CPV364M4K

PRELIMINARY

PD- 5.042

Short Circuit Rated UltraFast IGBT

IGBT SIP MODULE

Features

Description

71319

10 164

D1 D3 D5

D2 D4 D6

Output Current in a Typical 20 kHz Motor Drive

Product Summary

• Short Circuit Rated UltraFast: Optimized for high

operating frequencies >5.0 kHz , and Short Circuit

Rated to 10µs @ 125°C, VGE = 15V

• Fully isolated printed circuit board mount package

• Switching-loss rating includes all "tail" losses

• HEXFREDTM soft ultrafast diodes

• Optimized for high operating frequency (over 5kHz)

See Fig. 1 for Current vs. Frequency curve

11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,

Power Factor 0.8, Modulation Depth 115% (See Figure 1)

The IGBT technology is the key to International Rectifier's advanced line of

IMS (Insulated Metal Substrate) Power Modules. These modules are more

efficient than comparable bipolar transistor modules, while at the same time

having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials

system that maximizes power throughput with low thermal resistance. This

package is highly suited to motor drive applications and where space is at a

premium.

7/18/97

IMS-2

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 24

IC @ TC = 100°C Continuous Collector Current 13 A

ICM Pulsed Collector Current 48

ILM Clamped Inductive Load Current 48

tsc Short Circuit Withstand Time 9.3 µ s

VGE Gate-to-Emitter Voltage ±20 V

VISOL Isolation Voltage, any terminal to case, 1 min 2500 VRMS

PD @ TC = 25°C Maximum Power Dissipation, each IGBT 63 W

PD @ TC = 100°C Maximum Power Dissipation, each IGBT 25

TJOperating Junction and -55 to +150

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw. 5-7 lbf•in ( 0.55-0.8 N•m)

Parameter Typ. Max. Units

RθJC (IGBT) Junction-to-Case, each IGBT, one IGBT in conduction ––– 2.0

RθJC (DIODE) Junction-to-Case, each diode, one diode in conduction ––– 3.0 °C/W

RθCS (MODULE) Case-to-Sink, flat, greased surface 0.10 –––

Wt Weight of module 20 (0.7) ––– g (oz)

Thermal Resistance

CPV364M4K

Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage600 ––– ––– V VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA

VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.80 2.3 IC = 13A VGE = 15V

––– 1.80 ––– V IC = 24A See Fig. 2, 5

––– 1.56 ––– IC = 13A, TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA

∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage –– – -13 –– – mV/°C VCE = VGE, IC = 250µA

gfe Forward Transconductance 11 18 ––– S VCE = 100V, IC = 10A

ICES Zero Gate Voltage Collector Current –– – ––– 250 µA VGE = 0V, V CE = 600V

––– ––– 3500 VGE = 0V, VCE = 600V, TJ = 150°C

VFM Diode Forward Voltage Drop ––– 1.3 1.7 V IC = 15A See Fig. 13

––– 1.2 1.6 IC = 15A, TJ = 150°C

IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

QgTotal Gate Charge (turn-on) — 11 0 1 70 IC = 13A

Qge Gate - Emitter Charge (turn-on) — 14 21 nC V CC = 400V See Fig.8

Qgc Gate - Collector Charge (turn-on) — 49 74 VGE = 15V

td(on) Turn-On Delay Time — 50 —

trRise Time — 3 0 — TJ = 25°C

td(off) Turn-Off Delay Time — 110 170 IC = 13A, VCC = 480V

tfFall Time — 91 140 VGE = 15V, RG = 10Ω

Eon Turn-On Switching Loss — 0.56 — Energy losses include "tail"

Eoff Turn-Off Switching Loss — 0.28 — mJ and diode reverse recovery

Ets Total Switching Loss — 0.84 1.1 See Fig. 9,10, 18

tsc Short Circuit Withstand Time 10 — — µ s VCC = 360V, TJ = 125°C

VGE = 15V, RG = 10Ω , VCPK < 500V

td(on) Turn-On Delay Time — 47 — TJ = 150°C, See Fig. 11,18

trRise Time — 3 0 — IC = 13A, VCC = 480V

td(off) Turn-Off Delay Time — 250 — VGE = 15V, RG = 10Ω

tfFall Time — 150 — Energy losses include "tail"

Ets Total Switching Loss — 1.28 — mJ and diode reverse recovery

LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package

Cies Input Capacitance — 1600 — VGE = 0V

Coes Output Capacitance — 130 — pF VCC = 30V See Fig. 7

Cres Reverse Transfer Capacitance — 55 — ƒ = 1.0MHz

trr Diode Reverse Recovery Time — 42 60 ns T J = 25°C See Fig.

— 74 120 TJ = 125°C 14 IF = 15A

Irr Diode Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C See Fig.

— 6.5 10 TJ = 125°C 15 VR = 200V

Qrr Diode Reverse Recovery Charge — 80 18 0 nC TJ = 25°C See Fig.

— 220 600 TJ = 125°C 16 di/dt = 200Aµs

di(rec)M/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs TJ = 25°C See Fig.

During tb— 160 — TJ = 125°C 17

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

CPV364M4K

0.1 1 10 100

f, Frequency (KHz)

LOAD CURRENT (A)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

Tc = 90°C

Tj = 125°C

Power Factor = 0.8

M odulation D epth = 1.15

V cc = 50% of Rated Voltage

0.00

0.59

1.17

1.76

Total Output Power (kW)

3.51

5.27

2.34

2.93

4.10

4.68

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

100

1 10

V , Collector-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 15V

20µs PULSE WIDTH

T = 25 C

J°

T = 150 C

J°

100

5678910

V , Gate-to-Emitter Voltage (V)

I , Collector-to-Emitter Current (A)

V = 50V

5µs PULSE WIDTH

T = 25 C

J°

T = 150 C

J°

CPV364M4K

-60 -40 -20 0 20 40 60 80 100 120 140 160

1.0

2.0

3.0

4.0

T , Junction Temperature ( C)

V , Collector-to-Emitter Voltage(V)

J°

V = 15V

80 us PULSE WIDTH

I = A26

I = A13

I = A6.5

Fig. 4 - Maximum Collector Current vs.

Case Temperature

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

25 50 75 100 125 150

Maximu m DC Co ll e c tor Cu rren t (A)

T , C ase Te m peratu re (°C )

V = 15V

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

t , Rec t a ngular Pu lse Du ration (s ec)

thJC

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(T HERMAL RESPONSE)

Therm al R espon se (Z )

Notes :

1. D uty fac tor D = t / t

2. P ea k T = P x Z + T

JDM thJC C

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

CPV364M4K

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

Fig. 9 - Typical Switching Losses vs. Gate

Resistance Fig. 10 - Typical Switching Losses vs.

Junction Temperature

010 20 30 40 50

0.5

1.0

1.5

R , Gate Resistance (Ohm)

Total Switching Losses (mJ)

V = 480V

V = 15V

T = 25 C

I = 13A

RG , Gate Resistance ( Ω ) -60 -40 -20 0 20 40 60 80 100 120 140 160

0.1

T , Junction Temperature ( C )

Total Switching Losses (mJ)

J°

R = Ohm

V = 15V

V = 480V

CC I = A

I = A

6.5

10Ω

020 40 60 80 100 120

Q , Total Gate Charge (nC)

V , Gate-to-Emitter Voltage (V)

V= 400V

I = 13A

1 10 100

500

1000

1500

2000

2500

3000

V , Collector-to-Emitter Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

ies ge gc , ce

res gc

oes ce gc

Cies

Coes

Cres

CPV364M4K

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current Fig. 12 - Turn-Off SOA

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

100

0.8 1.2 1.6 2.0 2.4

Instantan eous Forw ard C urrent - I (A)

F orwa rd V olta ge Drop - V (V)

T = 150°C

T = 125°C

T = 25 ° C

100

1000

1 10 100 1000

I , Co llec to r-to - Emitte r Curre n t ( A )

SAF E OPERATING AREA

V = 20V

T = 125°C

V , Co ll e c to r-to-Emitte r Vo lta g e (V)

0 5 10 15 20 25 30

0.0

1.0

2.0

3.0

4.0

I , Collector-to-emitter Current (A)

Total Switching Losses (mJ)

R = Ohm

T = 150 C

V = 480V

V = 15V

10Ω

CPV364M4K

Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. di f/dt

100

1000

100 1000

di /d t - (A /µ s )

d i(rec )M/d t - (A/ µ s )

I = 5.0A

I = 15A

I = 30A

V = 200V

T = 125°C

T = 25°C

200

400

600

800

100 1000

d i /dt - ( A /µ s)

Q - ( n C )

I = 30A

I = 15 A

I = 5.0A

V = 200V

T = 125°C

T = 25°C

100

100 1000

d i /d t - (A/ µ s )

I - ( A )

IRRM

I = 5.0 A

I = 15A

I = 30 A

V = 200V

T = 125°C

T = 25°C

100

100 1000

di /dt - (A/µs)

t - (ns)

I = 30A

I = 15A

I = 5.0A

V = 200V

T = 125°C

T = 25°C

CPV364M4K

Vce

t1 t2

90% Ic

10 % Vc e

td(off) tf

Ic 5% Ic

t1+5µS

Vce ic dt

90% Vge

+Vge

∫

E off =

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫

Vce ie dt

5% Vc e

Ipk

Vcc 10% Ic

Vce

t1 t2

DUT VOLTAGE

AND CURRENT

G ATE VO LTAGE D .U.T.

+Vg

10% +Vg

90% Ic

trtd(on)

DIODE REVERSE

RECOVERY ENERGY

E on =

∫

Er ec = t4

Vd id dt

DIODE RE COV ERY

WAVEFORMS

Vpk

10% Vcc

Irr

10 % Ir r Vcc

trr

∫

Q rr = trr

id d t

Same type

device as

D.U.T.

430µF

80%

of Vce

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

CPV364M4K

Vg GATE SIGN AL

DE VICE UNDER TE ST

CURRENT D.U.T.

VO L T A G E IN D .U.T .

CURRENT IN D1

t0 t1 t2

D.U.T.

V *

50V

1000V

6000µF

100 V

Figure 19. Clamped Inductive Load Test

Circuit

Figure 20. Pulsed Collector Current

Test Circuit

RL=480V

4 X IC @25°C

0 - 480V

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

CPV364M4K

Case Outline  IMS-2

Notes:

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)

VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (Figure 19)

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/ Data and specifications subject to change without notice. 7/97

Dimens ions in Millimeters and (Inc hes)

IMS-2 Package Outline (13 Pins)

7.87 ( .310)

5.46 (.215)

1.27 (.050)

6.10 (.240)

3.05 ± 0.38

(.120 ± .015)

0.51 (.020)

0.38 (.015)

62.43 (2.458)

53.85 (2.120)

3.91 (.154)

21.97 (.865)

3.94 (.155)

4.06 ± 0.51

(.160 ± .020)

5.08 (.200)

1.27 (.050)

13X

2.54 ( .100)

6X 0.76 ( .030)

13X

1 2 3 4 5 6 7 8 9 10 1 1 1 2 13 14 1 5 1 6 17 18 19

NOTES:

1. Tolerance unless otherwise

specified ± 0.254 (.010).

2. Controlling Dimension: Inch.

3. Dimensions are shown in

Millimeter (Inches).

4. Terminal numbers are shown

for reference only.