STGW80H65FB, STGWA80H65FB, STGWT80H65FB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features * Maximum junction temperature: TJ = 175 C TAB * High speed switching series * Minimized tail current * VCE(sat) = 1.6 V (typ.) @ IC = 80 A 2 3 3 2 1 1 * Safe paralleling TO-3P TO-247 TO-247 long leads * Tight parameter distribution * Low thermal resistance Applications Figure 1. Internal schematic diagram * Photovoltaic inverters * High frequency converters C (2 or TAB) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order code Marking Package Packaging STGW80H65FB GW80H65FB TO-247 Tube STGWA80H65FB GWA80H65FB TO-247 long leads Tube STGWT80H65FB GWT80H65FB TO-3P Tube June 2014 This is information on a product in full production. DocID026401 Rev 1 1/18 www.st.com 18 Contents STGW80H65FB, STGWA80H65FB, STGWT80H65FB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 2/18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 TO-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DocID026401 Rev 1 STGW80H65FB, STGWA80H65FB, STGWT80H65FB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 650 V (1) IC Continuous collector current at TC = 25 C IC Continuous collector current at TC = 100 C 80 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C 469 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit 0.32 C/W 50 C/W TJ 120 A 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID026401 Rev 1 3/18 Electrical characteristics 2 STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.6 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 80 A TJ = 175 C VGE(th) Max. 650 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2 1.8 V 1.9 5 6 7 V VCE = 650 V 100 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/18 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 80 A, VGE = 15 V, see Figure 23 Qge Gate-emitter charge Qgc Gate-collector charge DocID026401 Rev 1 Min. Typ. Max. Unit - 10524 - pF - 385 - pF - 215 - pF - 414 - nC - 78 - nC - 170 - nC STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 84 - ns Current rise time - 52 - ns - 1270 - A/s - 280 - ns - 31 - ns Turn-on current slope VCE = 400 V, IC = 80 A, RG = 10 , VGE = 15 V, see Figure 22 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 2.1 - mJ Eoff(2) Turn-off switching losses - 1.5 - mJ Total switching losses - 3.6 - mJ Turn-on delay time - 77 - ns Current rise time - 51 - ns Turn-on current slope - 1270 - A/s - 328 - ns - 30 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 80 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 22 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 4.4 - mJ Eoff(2) Turn-off switching losses - 2.1 - mJ Total switching losses - 6.5 - mJ Ets 1. Parameter Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed STGW80H65DFB 2. Turn-off losses include also the tail of the collector current. DocID026401 Rev 1 5/18 Electrical characteristics 2.1 STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25C) GIPD130920131606FSR IC (A) VGE=15V Figure 3. Output characteristics (TJ = 175C) GIPD160920130919FSR IC (A) VGE=15V 11V 140 11V 140 9V 9V 120 120 100 100 80 80 60 60 40 40 20 20 7V 0 2 1 0 4 3 Figure 4. Transfer characteristics GIPD160920130924FSR IC (A) 0 VCE(V) VCE=10V 2 1 0 3 4 VCE(V) Figure 5. Collector current vs. case temperature GIPD160920130941FSR IC (A) VGE = 15 V, TJ = 175 C 120 140 120 100 25C 100 80 TJ=175C -40C 80 60 60 40 40 20 20 0 8 7 6 9 Figure 6. Power dissipation vs. case temperature GIPD160920130948FSR Ptot (W) 450 0 11 VGE(V) 10 VGE = 15 V, TJ = 175 C 400 0 25 50 75 100 125 150 Figure 7. VCE(sat) vs. junction temperature VCE(sat) (V) 2.6 GIPD160920130952FSR VGE= 15V 2.4 IC= 160A 350 2.2 300 2 250 200 1.8 IC= 80A 150 1.6 100 1.4 50 0 0 6/18 TJ(C) 25 50 75 100 125 150 TJ(C) 1.2 -50 DocID026401 Rev 1 IC= 40A 0 50 100 150 TJ(C) STGW80H65FB, STGWA80H65FB, STGWT80H65FB Figure 8. VCE(sat) vs. collector current Figure 9. Forward bias safe operating area GIPD160920131029FSR VCE(sat) (V) 2.6 Electrical characteristics GIPD160920131115FSR IC (A) VGE= 15V 2.4 100 TJ= 175C 2.2 TJ= 25C 10s 2 1.8 100s 10 1.6 1.4 1 1.2 1ms Single pulse Tc= 25C, TJ 175C VGE= 15V TJ= -40C 1 0.8 0 20 40 60 80 100 120 140 IC(A) Figure 10. Capacitance variations 1 10 VCE(V) 100 Figure 11. Normalized V(BR)CES vs. junction temperature GIPD160920131200FSR C (pF) 0.1 GIPD160920131144FSR V(BR)CES (norm) 1.1 10000 Cies 1000 1 IC= 2mA Coes Cres 100 10 0.1 1 100 10 Figure 12. Normalized VGE(th) vs. junction temperature GIPD160920131151FSR VGE (norm) 1.1 0.9 -50 VCE(V) IC= 1mA 0 50 100 150 TJ(C) Figure 13. Gate charge vs. gate-emitter voltage GIPD160920131156FSR VGE (V) 16 14 1 IC= 80A VCC= 520V 12 10 0.9 8 0.8 6 4 0.7 2 0.6 -50 0 50 100 150 TJ(C) DocID026401 Rev 1 0 0 100 200 300 400 Qg(nC) 7/18 Electrical characteristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB Figure 14. Switching loss vs temperature E (J) 4500 GIPD160920131504FSR VCC= 400V, VGE = 15V IC= 80A, Rg= 10 EON 4000 Figure 15. Switching loss vs gate resistance GIPD160920131208FSR E (J) VCC= 400V, VGE = 15V IC= 80A, TJ= 175C 5000 3500 4200 3000 3400 EON 2500 EOFF 2600 2000 1000 0 25 50 75 100 125 150 175 TJ(C) Figure 16. Switching loss vs collector current E (J) EOFF 1800 1500 GIPD160920131436FSR VCC= 400V, VGE = 15V RG= 10, TJ= 175C 1000 2 6 10 14 RG() 18 Figure 17. Switching loss vs collector emitter voltage GIPD160920131524FSR E (J) 6000 TJ= 175C, VGE = 15V IC= 80A, Rg= 10 EON 9000 5000 8000 7000 EON 6000 4000 5000 4000 3000 3000 EOFF 2000 1000 0 0 20 40 EOFF 2000 60 80 100 120 140 IC(A) 1000 150 200 250 300 350 400 450 VCE(V) Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance GIPD160920131533FSR t (ns) GIPD160920131539FSR t (ns) tdoff 100 tdon tdon tr 10 1 20 8/18 tdoff TJ= 175C, VGE = 15V VCC= 400V, IC= 80A 100 tr tf tf TJ= 175C, VGE = 15V VCC= 400V, Rg= 10 40 60 80 100 120 140 IC(A) DocID026401 Rev 1 10 4 8 12 16 20 Rg() STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics Figure 20. Collector current vs. switching frequency GIPD260520141426FSR Ic [A] 160 140 120 Tc=80C Tc=100 C 100 80 60 40 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=10 , VGE = 0/15 V, TJ =175C) f [kHz] 10 Figure 21. Thermal impedance ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 DocID026401 Rev 1 10-2 10-1 tp (s) 9/18 Test circuits 3 STGW80H65FB, STGWA80H65FB, STGWT80H65FB Test circuits Figure 22. Test circuit for inductive load switching Figure 23. Gate charge test circuit k k k k k k AM01504v1 Figure 24. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 10/18 DocID026401 Rev 1 AM01505v1 STGW80H65FB, STGWA80H65FB, STGWT80H65FB 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247, STGW80H65FB Figure 25. TO-247 drawing 0075325_G DocID026401 Rev 1 11/18 Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB Table 7. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 12/18 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID026401 Rev 1 5.70 STGW80H65FB, STGWA80H65FB, STGWT80H65FB 4.2 Package mechanical data TO-247 long leads, STGWA80H65FB Figure 26. TO-247 long leads drawing 8463846_A_F DocID026401 Rev 1 13/18 Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB Table 8. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 14/18 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID026401 Rev 1 6.25 STGW80H65FB, STGWA80H65FB, STGWT80H65FB 4.3 Package mechanical data TO-3P, STGWT80H65FB Figure 27. TO-3P drawing 8045950_B DocID026401 Rev 1 15/18 Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB Table 9. TO-3P mechanical data mm Dim. 16/18 Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 oP 3.30 3.40 3.50 oP1 3.10 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 DocID026401 Rev 1 STGW80H65FB, STGWA80H65FB, STGWT80H65FB 5 Revision history Revision history Table 10. Document revision history Date Revision 13-Jun-2014 1 Changes Initial release. DocID026401 Rev 1 17/18 STGW80H65FB, STGWA80H65FB, STGWT80H65FB Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. 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