This is information on a product in full production.
June 2014 DocID026401 Rev 1 1/18
18
STGW80H65FB, STGWA80H65FB,
STGWT80H65FB
Trench gate field-stop IGBT, HB series
650 V, 80 A high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.6 V (typ.) @ I
C
= 80 A
•Tight parameter distribution
•Safe paralleling
•Low thermal resistance
Applications
•Photovoltaic inverters
•High frequency converters
Description
This device is an IGBT developed using an
advanc ed propr i etary trench gate and fie ld sto p
structure. The device is part of the new “HB”
series of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequency converter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
TO-247
1
23
TO-3P
12
3
TAB
TO-247 long leads
C (2 or TAB)
E (3)
G (1)
Table 1. Device summary
Order code Marking Package Packaging
STGW80H65FB GW80H65FB TO-247 Tube
STGWA80H65FB GWA80H65FB TO-247 long leads Tube
STGWT80H65FB GWT80H65FB TO-3P Tube
www.st.com
Contents STGW80H65FB, STG WA80H6 5F B, STG WT80 H 65 FB
2/18 DocID026401 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1 T O-247, STGW80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.2 T O-247 long leads, STGWA80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3 T O-3P, STGWT80H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026401 Rev 1 3/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 650 V
I
C
Continu ous collec tor current at T
C
= 25 °C 120
(1)
1. Current level is limited by bond wires.
A
I
C
Continu ous collec tor current at T
C
= 100 °C 80 A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25 °C 469 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case 0.32 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
Electrical charact eristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
4/18 DocID026401 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0) I
C
= 2 mA 650 V
V
CE(sat)
Collect or-emitter sat uration
voltage
V
GE
= 15 V, I
C
= 80 A 1.6 2
V
V
GE
= 15 V, I
C
= 80 A
T
J
= 125 °C 1.8
V
GE
= 15 V, I
C
= 80 A
T
J
= 175 °C 1.9
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 650 V 100 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
- 10524 - pF
C
oes
Output capacitance - 385 - pF
C
res
Reverse tran sfer
capacitance -215-pF
Q
g
Total gate charge V
CC
= 520 V, I
C
= 80 A,
V
GE
= 15 V, see Figure 23
-414-nC
Q
ge
Gate-emitter charge - 78 - nC
Q
gc
Gate-collector charge - 170 - nC
DocID026401 Rev 1 5/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
see Figure 22
-84-ns
t
r
Current rise time - 52 - ns
(di/dt)
on
Turn-on current slope - 1270 - A/µs
t
d(off)
Tu rn-off delay time - 280 - ns
t
f
Current fall time - 31 - ns
E
on(1)
1. Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW80H65DFB
Turn-on switch ing losses - 2.1 - mJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Tu rn-off switching losses - 1.5 - mJ
E
ts
Total switch ing losses - 3.6 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 10 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 22
-77-ns
t
r
Current rise time - 51 - ns
(di/dt)
on
Turn-on current slope - 1270 - A/µs
t
d(off)
Tu rn-off delay time - 328 - ns
t
f
Current fall time - 30 - ns
E
on(1)
Turn-on switch ing losses - 4.4 - mJ
E
off(2)
Tu rn-off switching losses - 2.1 - mJ
E
ts
Total switch ing losses - 6.5 - mJ
Electrical charact eristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
6/18 DocID026401 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
I
C
60
40
20
001V
CE
(V)
(A)
4
80
23
100
V
GE
=15V
120
140
9V
11V
GIPD130920131606FSR
I
C
60
40
20
001V
CE
(V)
(A)
4
80
23
100
V
GE
=15V
120
140
9V
11V
7V
GIPD160920130919FSR
Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature
I
C
60
40
20
067V
GE
(V)
(A)
10
80
89
100
T
J
=175°C
120
140
-40°C
11
25°C
V
CE
=10V
GIPD160920130924FSR
I
C
60
40
20
0
025 T
J
(°C)
(A)
100
80
50 75
100
120
125 150
V
GE
= 15 V, T
J
= 175 °C
GIPD160920130941FSR
Figure 6. Power dissipation vs. case
temperature Figure 7. V
CE(sat)
vs. junction temperature
P
tot
150
100
50
0025 T
J
(°C)
(W)
100
200
50 75
250
300
350
125 150
400
450
V
GE
= 15 V, T
J
= 175 °C
GIPD160920130948FSR
V
CE(sat)
1.8
1.6
1.4
1.2
-50 T
J
(°C)
(V)
100
2
050
2.2
2.4
2.6
150
V
GE
= 15V
I
C
= 160A
I
C
= 80A
I
C
= 40A
GIPD160920130952FSR
DocID026401 Rev 1 7/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 8. V
CE(sat)
vs. collector current Figure 9. Forward bias safe operating area
V
CE(sat)
1.4
1.2
1
0.80I
C
(A)
(V)
60
1.6
20 40
1.8
2
2.2
80
V
GE
= 15V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
2.4
2.6
100 120 140
GIPD160920131029FSR
I
C
100
10
1
0.11V
CE
(V)
(A)
10 100
10μs
100μs
1ms
Single pulse
Tc= 25°C, T
J
≤ 175°C
V
GE
= 15V
GIPD160920131115FSR
Figure 10. Capacitance variations Figure 1 1. Normalized V
(BR)CES
vs. junction
temperature
C
1000
100
10
0.1 V
CE
(V)
(pF)
110
C
ies
C
oes
C
res
100
10000
GIPD160920131200FSR
V
(BR)CES
1.1
1
0.9
-50 T
J
(°C)
(norm)
0 50 100 150
I
C
= 2mA
GIPD160920131144FSR
Figure 12. Normalized V
GE(th)
vs. junction
temperature Figure 13. Gate charge vs. gate-emitter voltage
V
GE
0.8
0.7
0.6
-50 T
J
(°C)
(norm)
0 50 100 150
0.9
1
1.1 I
C
= 1mA
GIPD160920131151FSR
V
GE
4
2
0
0Q
g
(nC)
(V)
100 200 300 400
6
8
10
12
14
16
I
C
= 80A
V
CC
= 520V
GIPD160920131156FSR
Electrical charact eristics STGW80H65FB, STGWA80H65FB, STGWT80H65FB
8/18 DocID026401 Rev 1
Figure 14. Switching loss vs temperature Figure 15. Switching loss vs gate resistance
E
1500
1000
25 T
J
(°C)
(μJ)
50 75 100 125
2000
2500
3000
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, R
g
= 10Ω
150
E
OFF
E
ON
175
0
3500
4000
4500
GIPD160920131504FSR
E
2600
1800
1000
2R
G
(Ω)
(μJ)
610
14 18
3400
4200
5000
V
CC
= 400V, V
GE
= 15V
I
C
= 80A, T
J
= 175°C
E
ON
E
OFF
GIPD160920131208FSR
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs collector emitter
voltage
E
2000
1000
0
0I
C
(A)
(μJ)
20 40 60 80
3000
4000
5000
V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, T
J
= 175°C
100 120 140
6000
7000
8000
9000
E
ON
E
OFF
GIPD160920131436FSR
E
3000
2000
1000
150 V
CE
(V)
(μJ)
200 250 300 350
4000
5000
6000 T
J
= 175°C, V
GE
= 15V
I
C
= 80A, R
g
= 10Ω
400
E
OFF
E
ON
450
GIPD160920131524FSR
Figure 18. Switching times vs. collector current Figure 19. Switching times vs. gate resistance
t
100
10
1I
C
(A)
(ns)
20 40 60 80
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, R
g
= 10Ω
100
t
f
t
don
120
t
r
t
doff
140
GIPD160920131533FSR
t
100
10 R
g
(Ω)
(ns)
48
T
J
= 175°C, V
GE
= 15V
V
CC
= 400V, I
C
= 80A
12
t
r
t
don
t
f
t
doff
16 20
GIPD160920131539FSR
DocID026401 Rev 1 9/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Electrical characteristics
Figure 21. Thermal impedance
Figure 20. C ollector current vs. switching
frequency
40
60
80
100
120
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
140
160
GIPD260520141426FSR
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
Test circuits STGW80H65FB, STGWA80H65FB, STGWT80H65FB
10/18 DocID026401 Rev 1
3 Test circuits
Figure 22. Test circuit for inductive load
switching Figure 23. Gate charge test circuit
Figure 24. Switching waveform
AM01504v1
AM01505v1
k
k
k
k
k
k
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
DocID026401 Rev 1 11/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST tradema rk .
4.1 TO-247, STGW80H65FB
Figure 25. TO-2 47 drawing
0075325_G
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
12/18 DocID026401 Rev 1
Table 7. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID026401 Rev 1 13/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4.2 TO-247 long leads, STGWA80H65FB
Figure 26. TO-247 long leads drawing
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
14/18 DocID026401 Rev 1
Table 8. TO-247 long leads mechanical data
Dim. mm
Min. Typ. Max.
A4.905.005.10
A1 2.31 2.41 2.51
A2 1.90 2.00 2.10
b1.16 1.26
b2 3.25
b3 2.25
c0.59 0.66
D 20.90 21.00 21.10
E 15.70 15.80 15.90
E2 4.90 5.00 5.10
E3 2.40 2.50 2.60
e5.345.445.54
L 19.80 19.92 20.10
L1 4.30
P3.503.603.70
Q5.60 6.00
S6.056.156.25
DocID026401 Rev 1 15/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Package mechanical data
4.3 TO-3P, STGWT80H65FB
Figure 27. TO-3P drawin g
8045950_B
Package mechanical data STGW80H65FB, STGWA80H65FB, STGWT80H65FB
16/18 DocID026401 Rev 1
Tab l e 9. TO-3P mechanical da ta
Dim. mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4
DocID026401 Rev 1 17/18
STGW80H65FB, STGWA80H65FB, STGWT80H65FB Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
13-Jun-2014 1 Initial release.
STGW80H65FB, STG WA80H65FB, STG WT80 H65 FB
18/18 DocID026401 Rev 1
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