NEC / NPN SILICON TRANSISTOR 2SD471 DESCRIPTION The 2SD471 is designed for use in driver and output stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters (inches) FEATURES High Total Power Dissipation: : 70MA 1.0 W at 25C Ambient Temperature. (0278 MAX) oben : ae Complementary to the NEC 2SB564 PNP Transistor. efi: 3 3! 33 ow a ao ABSOLUTE MAXIMUM RATINGS 08+01 x Ss i (0.031 = Maximum Temperatures _ 31) Uy {gs Storage Tmperature ..............04. 55 to +150 C 0.6+01 | me ze Junction Temperature .............-. +150 C Maximum 0.024) 06301 => Maximum Power Dissipation (Ta=25 C) | To6e01 SS Total Power Dissipation ....... 0.00. 10W (0.024) Thermal Resistance (Junction to Ambient) ...... 125 C/W 17 PY i : (0.067) 7 TP > (0.067 oae - Maximum Voltages and Currents (Ta=25 C) ) TI oe?) x= oa 55 Vcso Collector to Base Voltage ............. 30 V 773 } | [85 ao VecEO Collector to Emitter Voltage ....... a... 25V BOS VeEBO Emitter to Base Voltage ............. 5.0 V 1. EMITTER lc Collector Current 2.2... 0.0.0. cee eee 1.0A 2, COLLECTOR ! B 3. BASE B ase Current ..........4.--0-00-005 O1A ELECTRICAL CHARACTERISTICS (Ta = 25 C) SYMBOL CHARACTERISTIC MIN. = TYP, MAX. UNIT TEST CONDITIONS hee, DC Current Gain 90 200 400 Vce=1.0 V, Ic=0.1 A hFE2 DC Current Gain 50 140 Vce=1.0 V,Ic=1.0A ft Gain Bandwidth Product 100 MHz Vce=6.0 V, IE= 10 mA: Cab Collector to Base Capacitance 22 pF Vcg=6.0 V, 1e=0, f=1.0 MHz IcBo Collector Cutoff Current , 100 nA Vog=30 V, 1=0 lEBO Emitter Cutoff Current 100 nA VeEBp=5.0 V, Ic=0 VBE Base to Emitter Voltage 600 630 700 mV Vce=6.0 V, Ic=10mA VCE(sat} Collector Saturation Voltage 0.21 0.35 Vv i=1.0A, ip=0.1 A VBE(sat} Base Saturation Voltage 1.0 1.2 Vv I=1.0 A, tg=0.1 A Classification of hre4 ' Rank M L K Range 90 180 135 270 200 ~ 400 hee, Test Conditions: Voce = 1.0V, Ic =0.1A 418NEC TYPICAL CHARACTERISTICS (Ta=25 C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.0 0.8 06 04 Collector Current A 0.2 P,Total Power Dissipation W 0 50 100 150 200 250 TaAmbient Temperature TC COLLECTOR CURRENT vs, COLLECTOR TO EMITTER VOLTAGE 1.0 = vo bo = < 08 2 5 8 5 06 8 3 2 6 a 8 04 3 8 2 3 + 02 ; 0 04 08 12 #416 20 = Veg ~Collector ta Emitter Voltage V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE oo 10 Vay =6.0V Pulsed 50) 200 <x | 100 r= 2 5 50 c . oS 3 o 9 20 x 3 2 y 10 3 oO a 5 ie = 2 1 04 #05 O06 O7 O08 vd 1.9 Vii 7Base to Emitter Voltage V 10000 unless otherwise noted) SAFE OPERATING AREAS (TRANSIENT THERMAL RESISTANCE) 10 - 5 2 = I ! < 2 0.5 5 3 0.2 s o 0.1 2 8 0.05 1 0.02 0.01 1 2 5 10 20 50 100 Vey, Collector to Emitter Voltage V COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 k=] 5 05 02 01 0.05 002 Virtsaty 7 Base Saturation VoltageV .O1 Tm 2m 5ml0 md mD mi mad m5 mj) 2 i 10 i; ~Collector Current A DC CURRENT GAIN vs. COLLECTOR CURRENT WY. -10V 5000 . Pulsed n 3 o 3 1000 $00 200 100 50 20 10 f,Gain Bandwidth Product - MHz Lm 2m $m 10m 20m 30m 100 200m 500m 1 5 10 I. Collector CurrentA 2SD471 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 450 400 80 350 300 60 2 40 150 - 20 - 100 In =50 pA Qo 0 - 2 4 6 8 10 Voy, Collector to Emitter VoltageV BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 Pulsed 4-4 | 05 0.2 01 0.05 0.02 Im 2m Sm10m20m50m1O m2 ms0Om: 2 4 10 Ic Collector Current A GAIN BANOWIOTH PRODUCT vs. EMITTER CURRENT 1000 wu 2 y O o o wn o Nn a Q 1 2 5 10 20 0 100 200 500 1000 |, Emitter Current-~mA 4192SD471 COLLECTOR TO BASE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 100 f=1 =O 50 20 10 2 C,,Collector to Base Capacitance pF 1 010.2 05 1 2 5 10 20 50 100 Vey Callectar to Base Voltage V 420 NEC