Semiconductor Group 1
PNP Silicon AF Transistor BCP 69
Maximum Ratings
1234
B C E C
Type Ordering Code
(tape and reel)
Marking Package1)
Pin Configuration
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
SOT-223
Parameter Symbol Values Unit
Collector-emitter voltage VCE0
VCES 20
25 V
Peak collector current ICM 2
Base current IB100 mA
Collector current IC1A
Junction temperature Tj150 ˚C
Total power dissipation, TS = 124 ˚C2) Ptot 1.5 W
Storage temperature range Tstg – 65 … + 150
Collector-base voltage VCB0 25
Thermal Resistance
Junction - ambient2) Rth JA ≤ 72 K/W
Emitter-base voltage VEB0 5
Peak base current IBM 200
Junction - soldering point Rth JS ≤ 17
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm ×40 mm ×1.5 mm/6 cm2 Cu.
●For general AF application
●High collector current
●High current gain
●Low collector-emitter saturation voltage
●Complementary type: BCP 68 (NPN)
01.97
Semiconductor Group 2
BCP 69
–
DC current gain1)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V BCP 69
BCP 69-10
BCP 69-16
BCP 69-25
IC = 1 A, VCE = 1 V
hFE 50
85
85
100
160
60
–
–
100
160
250
–
–
375
160
250
375
–
MHzTransition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz fT– 100 –
AC characteristics
V
Collector-emitter saturation voltage1)
IC = 1 A, IB = 100 mA VCEsat – – 0.5
Base-emitter voltage1)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VBE –
–0.6
––
1
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 30 mA, IB = 0 V(BR)CE0 20 – –
Collector-base breakdown voltage
I
C = 10 µA, IB = 0 V(BR)CB0 25 – –
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Emitter-base breakdown voltage
I
E = 10 µA, IB = 0 V(BR)EB0 5––
nA
µA
Collector-base cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
100 nAEmitter-base cutoff current
VEB = 5 V, IC = 0 IEB0 – – 100
Collector-emitter breakdown voltage
I
C = 10 µA, VBE = 0 V(BR)CES 25 – –
1) Pulse test conditions: t≤300 µs, D = 2 %.
Semiconductor Group 3
BCP 69
Total power dissipation Ptot =f(TA*; TS)
* Package mounted on epoxy
Collector cutoff current ICB0 =f(TA)
VCB = 25 V
Transition frequency fT=f(IC)
VCE = 5 V, f = 100 MHz
DC current gain hFE =f(IC)
VCB = 1 V
Semiconductor Group 4
BCP 69
Collector-emitter saturation voltage
IC=f(VCEsat)
hFE = 10
Permissible pulse load Ptot max/Ptot DC =f(tp)
Base-emitter saturation voltage
IC=f(VBEsat)
hFE = 10
