© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1 VCES = 1200V
IC110 = 17A
VCE(sat)
3.4V
tfi(typ) = 108ns
DS100485B(8/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
GCE Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250A, VGE = 0V 1200 V
VGE(th) IC= 250A, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 125C 350 μA
IGES VCE = 0V, VGE = 20V 100 nA
VCE(sat) IC= 20A, VGE = 15V, Note 1 3.4 V
TJ = 150C 4.0 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1M 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 36 A
IC110 TC= 110°C 17 A
IF110 TC= 110°C 20 A
ICM TC= 25°C, 1ms 88 A
IATC= 25°C 10 A
EAS TC= 25°C 400 mJ
SSOA VGE = 15V, TVJ = 150°C, RG = 10 ICM = 40 A
(RBSOA) Clamped Inductive Load @VCE VCES
PCTC= 25°C 230 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque 1.13/10 Nm/lb.in.
Weight 6g
1200V XPTTM IGBT
GenX3TM w/ Diode
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Anti-Parallel Ultra Fast Diode
Avalanche Rated
International Standard Package
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
e
P
TO-247 (IXYH) Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 20A, VCE = 10V, Note 1 7.0 11.5 S
Cies 1110 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 120 pF
Cres 27 pF
Qg(on) 53 nC
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 9 nC
Qgc 22 nC
td(on) 20 ns
tri 29 ns
Eon 1.3 mJ
td(off) 90 ns
tfi 108 ns
Eoff 0.5 1.0 mJ
td(on) 20 ns
tri 40 ns
Eon 3.7 mJ
td(off) 115 ns
tfi 105 ns
Eoff 0.7 mJ
RthJC 0.54 °C/W
RthCS 0.21 °C/W
Inductive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
Inductive load, TJ = 150°C
IC = 20A, VGE = 15V
VCE = 0.5 • VCES, RG = 10
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
(TJ = 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
VF 3.00 V
TJ = 150°C 1.75 V
IRM 9 A
trr 195 ns
RthJC 0.90 °C/W
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C
VR = 600V TJ = 100°C
IF = 30A,VGE = 0V, Note 1
Reverse Diode (FRED)
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1
Fig. 1. Output Characteristic s @ T
J
= 25ºC
0
5
10
15
20
25
30
35
40
00.511.522.533.544.555.56
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
7V
9V
6V
8V
Fig. 2. Exte nded Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
0 5 10 15 20 25 30
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
12V
9V
13V
10V
7V
11V
6V
8V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
5
10
15
20
25
30
35
40
012345678
V
CE
- Volts
I
C
- Amperes
7V
6V
9V
8V
V
GE
= 15V
13V
11V
10V
5V
Fig. 4. Dependence of V
CE(sat)
on
Junc tion Tempe ratu re
0.4
0.8
1.2
1.6
2.0
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 20A
I
C
= 10A
I
C
= 40A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1
3
5
7
9
11
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 40A
T
J
= 25ºC
10A
20A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
3.5 4.5 5.5 6.5 7.5 8.5 9.5 10.5
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
150ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
Fig. 11 . Maximum Transient Thermal Impedanc e (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 7. Transc onduc ta nc e
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
200 400 600 800 1000 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50 55
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 20A
I
G
= 10mA
Fig. 9 . Capa citance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
0.4
0.8
1.2
1.6
2
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
40
80
120
160
200
240
280
320
360
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 13. Inductive Switching Energy Loss v s.
Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs .
Junction Temperature
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 16. Inductive Turn-off Switching Times vs.
Collec t o r Curre nt
20
40
60
80
100
120
140
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
f i
- Nanoseconds
70
80
90
100
110
120
130
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
RG = 10
, VGE = 15V
VCE = 600V
TJ = 25ºC
TJ = 150ºC
Fig. 17. Induc tive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanosecond
s
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
RG = 10
, VGE = 15V
VCE = 600V
I C = 20A
I C = 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH20N120C3D1
IXYS REF: IXY_20N120C3(4L) 9-06-13-C
Fig. 19. Inductive Turn-on Switching Tim es vs.
Collecto r Curre nt
0
40
80
120
160
200
20 22 24 26 28 30 32 34 36 38 40
I
C
- Amperes
t
r i
- Nanoseconds
19
20
21
22
23
24
t
d(on) - Nanoseconds
t
r i
td(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Time s vs.
Junction Temperature
0
40
80
120
160
200
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i - Nanosecond
s
17
19
21
23
25
27
t
d(on) - Nanoseconds
t
r i
td(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 20A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r i - Nanosecond
s
15
20
25
30
35
40
45
50
t
d(on) - Nanoseconds
t
r i
td(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 20A
I
C
= 40A
Fig. 21. Maximum Peak Load Current vs . Frequency
0
10
20
30
40
50
60
70
80
0.1 1 10 100 1000
f
max - KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 600V
V
GE
= 15V
R
G
= 10
D = 0.5
Square Wave
Triangular Wave
Fig. 22. Maximum Transient Thermal Impedance (Diode)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved
IXYH20N120C3D1
Fig. 23 . Fo rward Current I
F
vs V
F
0
10
20
30
40
50
60
70
00.511.522.533.54
V
F
[V]
I
F
[A]
25ºC
T
VJ
= 150ºC
100ºC
Fig. 24. Reverse Recovery Charge Q
RM
vs. -di
F
/dt
0
1
2
3
4
5
100 1000
-di
F
/dt [A/µs]
Q
RM
[µC]
TVJ = 100ºC
VR = 600V
IF = 60A
15A
30A
500
Fig. 25. Peak Reverse Current I
RM
vs. -di
F
/dt
0
10
20
30
40
50
60
0 200 400 600 800 1000
-di
F
/dt [A/µs]
IRM
[A]
T
VJ
= 100ºC
V
R
= 600V
IF = 60A, 30A, 15A
Fig. 2 6 . Dynamic Parameters Q
RM
, I
RM
vs. T
VJ
0
0.5
1
1.5
2
20 40 60 80 100 120 140 160
T
VJ
[ºC]
IRM & QRM [normalized]
IRM
QRM
Fig. 27. Recov e ry Time t
rr
vs. -di
F
/dt
120
140
160
180
200
220
0 200 400 600 800 1000
-diF/dt [A/µs]
t
rr
[ns]
T
VJ
= 100ºC
V
R
= 600V
I
F
= 60A
30A
15A
Fig. 28. Peak Forward Voltage V
FR
, t
rr
vs -di
F
/dt
0
20
40
60
80
100
120
0 100 200 300 400 500 600 700 800 900 1000
-di
F
/dt [A/µs]
V
FR
[V]
0
0.2
0.4
0.6
0.8
1
1.2
t
rr
[µs]
t
rr
T
VJ
= 100ºC
I
F
= 30A
V
FR
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