NPN SILICON POWER TRANSISTOR
... fast switching speeds and high current capacity ideally suit
these parts for use in switching regulators, inverters, wideband
amplifiers and power oscillators in industrial and commercial
applications.
e, High speed TF max. =0.5 ps
●Low saturation VCE(sat) =1.O’V (max.) @Ic =12A
,.,
.4,
2N5038
20 AMPERES .:?::
h:;),,
MAXIMUM RATINGS
Rating Symbol Value
Collector-Emitter Voltage ‘CEO (SUS) 90 ~~’ ‘$/$ ~dc
Collector-Base Voltage VCBO 15W*> ‘“J.t:~ Vdc
..’,,? .,’
,,,.<,,..... ,
Emitter-Base Voltage VEgo ‘-*S’” Vdc
Collector-Emitter Voltage (VBE =–1.5 V) VCEX >$$50 Vdc
Collector-Current –continuous Ic;,: “%$,, 20 Adc
–paak (pw<l Ores) ,.W3,>> “30’ Apk
Base-Current continuous ,.$:,\;>t#* 5Adc
Total Power Dissipation @Tc =25 ‘C 140 Watts
Operating and Storage Junction ‘c
Temperature Range ,~?’..b
~\,}* –65 to 200
r:~ m
a
2“
+—
H11❑
G
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE-COLLECTOR
All JEOEC cl!nltellsiot)s;IIIII tIrIles ~IpIIlv
CASE 1.03
(TO.31
Tc, TEMPERATURE (%)
I