SILICON MOS FET POWER AMPLIFIER, 155-168MHz, 7W, FM PORTABLE RADIO
M68739M
MITSUBISHI RF POWER MODULE
Nov. ´97
OUTLINE DRAWING
PIN:
Pin : RF INPUT
VGG : GATE BIAS SUPPLY
VDD : DRAIN BIAS SUPPLY
PO: RF OUTPUT
GND: FIN
Dimensions in mm BLOCK DIAGRAM
1
2
3
4
5
Symbol Parameter Test conditions Limits
Min Max Unit
f
PO
ηT
2fO
ρin
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
VDD=9.6V, VGG=2.5V, Pin=20mW
155 168
7
50 -20
4
MHz
W
%
dBc
-
- Stability ZG=50Ω, VDD=4.8-13.2V,
Load VSWR <4:1 No parasitic oscillation -
No degradation or
destroy
- Load VSWR tolerance VDD=13.2V, Pin=20mW,
PO=7W (VGG Adjust), ZL=20:1 -
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Note. Above parameters are guaranteed independently.
Symbol Parameter Conditions Ratings Unit
V16VDD Supply voltage V3VGG Gate bias voltage mW30Pin Input power W10POOutput power
°C
-30 to +100TC (OP) Operation case temperature
°C
-40 to +110Tstg Storage temperature
VGG≤2.5V, ZG=ZL=50Ω
f=155-168MHz, ZG=ZL=50Ω
f=155-168MHz, ZG=ZL=50Ω
f=155-168MHz, ZG=ZL=50Ω
30±0.2
26.6±0.2
21.2±0.2 2-R1.5±0.1
φ 0.45
6±1
23.9±1
1
2
3
4
5
13.7±1
18.8±1
4
5
2
1
3
