3LP03S Ordering number : ENA0010 P-Channel Silicon MOSFET 3LP03S General-Purpose Switching Device Applications Features * * * * Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage (*1) VGSS --10 V --0.25 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW10s, duty cycle1% V --1 A 0.15 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Ratings min ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=--8V, VDS=0V --30 VDS=--10V, ID=--100A VDS=--10V, ID=--120mA --0.4 Forward Transfer Admittance VGS(off) yfs Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--120mA, VGS=--4V ID=--60mA, VGS=--2.5V Input Capacitance RDS(on)3 Ciss ID=--10mA, VGS=--1.5V VDS=--10V, f=1MHz Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS Output Capacitance Coss Reverse Transfer Capacitance Crss 0.24 typ Unit max V --1 A --1 A --1.4 V 1.5 1.9 2.0 2.8 4.0 8.0 0.4 S 40 VDS=--10V, f=1MHz VDS=--10V, f=1MHz Marking : XG pF 8 pF 4.5 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81005PE MS IM TA-101200 No. A0010-1/4 3LP03S Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 9.5 Rise Time tr td(off) See specified Test Circuit. 5 ns See specified Test Circuit. 15 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 13 ns VDS=--10V, VGS=--4V, ID=--250mA 0.8 nC 0.3 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--10V, VGS=--4V, ID=--250mA VDS=--10V, VGS=--4V, ID=--250mA Diode Forward Voltage VSD IS=--250mA, VGS=0V 0.2 --1.2 V Switching Time Test Circuit unit : mm 7027-004 VDD= --15V VIN 0V --4V 1.6 0.8 0.4 ID= --120mA RL=125 VIN 0.2 D 0.3 1.6 0.5 0.5 nC --0.9 Package Dimensions 0.4 ns 1 2 VOUT PW=10s D.C.1% 3 0 to 0.1 0.75 0.6 0.1 G 0.1 MIN 1 : Gate 2 : Source 3 : Drain 3LP03S P.G 50 S SANYO : SMCP ID -- VDS C --0.40 --0.35 --0.30 --0.25 --0.20 --0.15 25 C --0.10 --0.05 --0.05 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- ID= --120mA 3.0 --60mA 2.5 2.0 1.5 1.0 0.5 0 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT08162 --2.0 --2.5 --3.0 --3.5 IT07654 RDS(on) -- Ta 4.0 4.5 3.5 --1.5 Gate-to-Source Voltage, VGS -- V Ta=25C 4.0 --1.0 --0.5 IT07653 RDS(on) -- VGS 5.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta= 75 C --25 C VGS= --1.5V --0.10 Drain Current, ID -- A --0.15 VDS= --10V 75 C 25 C --0.45 .0V --0.20 Ta= --25 V .5 V --2.0 --6. --4.5V 0V --4 Drain Current, ID -- A --0.25 ID -- VGS --0.50 --2 --3. 5 V --3 . 0V --0.30 3.5 3.0 .5V --2 S= 2.5 , VG 0mA --6 I D= 2.0 A, 120m 0V = --4. VGS I D= -- 1.5 1.0 0.5 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 IT07656 No. A0010-2/4 3LP03S yfs -- ID 5 3 C 5 --2 = C Ta 75 2 0.1 25 7 C 5 3 3 2 --0.01 7 5 2 --0.001 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 IT07657 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V SW Time -- ID 3 --1.4 IT07658 Ciss, Coss, Crss -- VDS 60 VDS= --15V VGS= --4V 2 50 td (off) tf Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --0.1 7 5 3 Drain Current, ID -- A 10 td(on) 7 tr 5 Ciss 40 30 20 10 3 2 5 3 0 7 Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Total Gate Charge, Qg -- nC --20 --25 VGS= --4V Ta=75C 2 25C --25C 1.0 7 2 3 5 7 --0.1 2 3 25C 1.0 2 3 5 7 --0.1 VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- --25C 2 Drain Current, ID -- A 3 5 7 --1.0 IT08165 7 --1.0 IT08164 RDS(on) -- ID 7 2 5 Drain Current, ID -- A VGS= --2.5V Ta=75C --30 IT08163 RDS(on) -- ID IT07661 3 7 --0.01 --15 3 5 --0.01 0.8 RDS(on) -- ID 5 --10 Drain-to-Source Voltage, VDS -- V 5 VDS= --10V ID= --0.25A 0 --5 IT07659 VGS -- Qg --4.0 --3.5 Coss Crss 0 2 --0.1 Gate-to-Source Voltage, VGS -- V 3 2 2 0.01 --0.001 Static Drain-to-Source On-State Resistance, RDS(on) -- VGS=0V Ta=7 5C 25C --25C 7 IS -- VSD --1.0 7 5 VDS= --10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 1.0 5 Ta=75C --25C 25C 3 2 --0.01 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 --1.0 IT08166 No. A0010-3/4 3LP03S PD -- Ta Allowable Power Dissipation, PD -- W 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT10079 Note on usage : Since the 3LP03S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2005. Specifications and information herein are subject to change without notice. PS No. A0010-4/4