3LP03S
No. A0010-1/4
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•2.5V drive.
•High ESD Voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --30 V
Gate-to-Source Voltage (*1) VGSS --10 V
Drain Current (DC) ID--0.25 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --1 A
Allowable Power Dissipation PD0.15 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 µA
Gate-to-Source Leakage Current IGSS VGS=--8V, VDS=0V --1 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--100µA --0.4 --1.4 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--120mA 0.24 0.4 S
RDS(on)1 ID=--120mA, VGS=--4V 1.5 1.9 Ω
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--60mA, VGS=--2.5V 2.0 2.8 Ω
RDS(on)3 ID=--10mA, VGS=--1.5V 4.0 8.0 Ω
Input Capacitance Ciss VDS=--10V, f=1MHz 40 pF
Output Capacitance Coss VDS=--10V, f=1MHz 8 pF
Reverse T ransfer Capacitance Crss VDS=--10V, f=1MHz 4.5 pF
Marking : XG Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0010
81005PE MS IM TA-101200
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
3LP03S P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
3LP03S
No. A0010-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Turn-ON Delay Time td(on) See specified Test Circuit. 9.5 ns
Rise T ime trSee specified Test Circuit. 5 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 15 ns
Fall T ime tfSee specified Test Circuit. 13 ns
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--250mA 0.8 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--250mA 0.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--250mA 0.2 nC
Diode Forward Voltage VSD IS=--250mA, VGS=0V --0.9 --1.2 V
Package Dimensions Switching Time Test Circuit
unit : mm
7027-004
3
1
2
1.6
1.6
0.75
0.8
0.4 0.4
0.50.5
0.6 0.2
0.3
0.1
0 to 0.1
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --120mA
RL=125Ω
VDD= --15V
VOUT
3LP03S
VIN
0V
--4V
VIN
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ambient Temperature, Ta --
°
C
RDS(on) -- Ta
IT07656
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
IT07653
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
IT07654
--0.1 --0.50
0
0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.25
--0.20
--0.15
--0.10
--0.05
--0.30
--6.0V
--4.5V
--4.0V --3.5V
--3.0V
--2.5V
--2.0V
VGS=
--
1.5V
--0.45
--0.40
--0.35
--0.30
--0.25
--0.20
--0.15
--0.10
--0.05
--0.50
--1.0 --1.5 --2.0 --2.5 --3.0 --3.5
Ta= --25
°
C
--25
°
C
25°C
25°C
Ta=75°C
75
°
C
VDS= --10V
--40--60 --20 0 20 40 60 80 100 120 140
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
ID= --60mA, VGS= --2.5V
ID= --120mA, VGS= --4.0V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
IT08162
--10
1.0
0--2 --3 --4 --5 --6 --7 --8 --9
2.0
3.0
4.0
4.5
0.5
1.5
2.5
3.5
5.0
--10
Ta=25
°C
--
60mA
ID=
--
120mA
3LP03S
No. A0010-3/4
0
00.80.1 0.2 0.3 0.4 0.5 0.6 0.7
--4.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT07661
RDS(on) -- ID
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
--0.1 23 5
7
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT07659
IT07658
Diode Forward Voltage, VSD -- V
IS -- VSD
Drain Current, ID -- A
IT07657
--0.001
0.1
0.01 --0.01
23 57 --0.1
22357 357
--1.0
7
5
3
2
1.0
7
5
3
2
Forward T ransfer Admittance,
y
fs -- S
y
fs-- ID
--0.8 --1.0--0.6 --1.2 --1.4--0.2 --0.40
--0.001
--0.1
--0.01
7
5
3
2
7
5
3
2
--1.0
7
5
3
2
Source Current, IS -- A
tf
tr
VDS= --10V
ID= --0.25A
RDS(on) -- ID
Drain Current, ID -- A
RDS(on) -- ID
Drain Current, ID -- A
VDS= --10V
Ta= --25°C
75°C
25
°
C
10
7
5
3
2
3
2
VGS=0V
25
°
C
--25°C
Ta=
75°C
td(off)
td(on)
VDS= --15V
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
23 57 23 57
--0.01 --0.1 --1.0
IT08164
0 --30--10 --15 --20 --25--5
IT08163
0
60
50
20
30
10
40
Coss
Ciss
VGS= --4V
Ta=
75°C
25°C
--25°C
5
7
1.0
2
3
5
5
7
1.0
2
3
23 57 23 57
--0.01 --0.1 --1.0
IT08165
VGS= --2.5V
Ta=
75°C
--25°C
5
7
2
3
23 57 23 57
--0.01 --0.1 --1.0
IT08166
VGS= --1.5V
25°C
Ta=
75°C
--25°C
25°C
Crss
3LP03S
No. A0010-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2005. Specifications and information herein are subject
to change without notice.
PS
0
020 40 60 80 100 120
0.05
0.10
0.15
0.20
140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT10079
Note on usage : Since the 3LP03S is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.