Absolute Maximum Ratings
Parameter Units
ID @VGS = -4.5V,TC = 25°C Continuous Drain Current -56*
ID @VGS = -4.5V,TC = 100°C Continuous Drain Current -56*
IDM Pulsed Drain Current À-224
PD @ TC = 25°C Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±10 V
EAS Single Pulse Avalanche Energy Á1060 mJ
IAR Avalanche Current À-56 A
EAR Repetitive Avalanche Energy À25 mJ
dv/dt Peak Diode Recovery dv/dt Â-3.7 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Pckg. Mounting Surface Temp. 300 (for 5s)
Weight 3.3 (Typical) g
Pre-Irradiation
°C
A
RADIATION HARDENED IRHLNA797064
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (SMD-2)
03/01/11
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60V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLNA797064 100K Rads (Si) 0.015Ω -56A*
IRHLNA793064 300K Rads (Si) 0.015Ω -56A*
For footnotes refer to the last page
SMD-2
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
International Rectifier’s R7TM
Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
* Current is limited by package
2N7622U2
PD-97174A
PRELIMINARY
IRHLNA797064, 2N7622U2 Pre-Irradiation
2www.irf.com
PRELIMINARY
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -56*
ISM Pulse Source Current (Body Diode) À— — -224
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -56A, VGS = 0V Ã
trr Reverse Recovery Time — — 159 ns Tj = 25°C, IF = -56A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 430 nC VDD ≤ -25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -60 — — V VGS = 0V, ID = -250µA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.06 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.015 ΩVGS = -4.5V, ID = -56A
Resistance
VGS(th) Gate Threshold Voltage -1.0 — -2.0 V VDS = VGS, ID = -250µA
∆VGS(th)/∆TJGate Threshold Voltage Coefficient — 4.1 — mV/°C
gfs Forward Transconductance 82 — — S VDS = -15V, IDS = -56A Ã
IDSS Zero Gate Voltage Drain Current — — -1.0 VDS= -48V ,VGS=0V
— — -10 VDS = -48V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -10V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 10V
QgTotal Gate Charge — — 190 VGS = -4.5V, ID = -56A
Qgs Gate-to-Source Charge — — 53 nC VDS = -30V
Qgd Gate-to-Drain (‘Miller’) Charge — — 56
td(on) Turn-On Delay Time — — 38 VDD = -30V, ID = -56A,
trRise Time — — 265 VGS = -6.0V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 210
tfFall Time — — 70
LS + LDTotal Inductance — 4.0 —
Ciss Input Capacitance — 10520 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 2780 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 310 —
nA
Ã
nH
ns
µA
Measured from the center of
drain pad to center of source pad
* Current is limited by package
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.5
RthJ-PCB Junction-to-PC board — 1.6 — soldered to a 2 square copper-cladboard
°C/W
RgGate Resistance 2.3 Ωf = 1.0MHz, open drain
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Pre-Irradiation IRHLNA797064, 2N7622U2
PRELIMINARY
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter Upto 300K Rads (Si)1Units Test Conditions
Min Max
BVDSS Drain-to-Source Breakdown Voltage -60 — VVGS = 0V, ID = -250µA
VGS(th) Gate Threshold Voltage -1.0 -2.0 VGS = VDS, ID = -250µA
IGSS Gate-to-Source Leakage Forward — -100 nA VGS = -10V
IGSS Gate-to-Source Leakage Reverse — 100 VGS = 10V
IDSS Zero Gate Voltage Drain Current — -10 µA VDS= -48V, VGS=0V
RDS(on) Static Drain-to-Source
On-State Resistance (TO-3) — 0.015 Ω VGS = -4.5V, ID = -56A
RDS(on) Static Drain-to-Source On-state
VSD Diode Forward Voltage— -5.0 V VGS = 0V, ID = -56A
Resistance (SMD-2) — 0.015 Ω VGS = -4.5V, ID = -56A
1. Part numbers IRHLNA797064, IRHLNA793064
Table 2. Single Event Effect Safe Operating Area
Ion LET Ener
g
y Ran
g
eVDS (V)
(
MeV/
(
m
g
/cm2
))
(
MeV
)
(µ
m
)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V 2V 4V 5V 6V 7V 8V 10V
Br 37 305 39 -60 -60 -60 -60 -40 -30 -25 -20
I 60 370 34 -60 -60 -60 -40 -20 - - -
Au 82 390 30 -60 -60 -60 - - - - -
-70
-60
-50
-40
-30
-20
-10
0
012345678910
VGS
VDS
Br
I
Au
IRHLNA797064, 2N7622U2 Pre-Irradiation
4www.irf.com
PRELIMINARY
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
10000
-ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 25°C
VGS
TOP -10V
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
-2.25V
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
10000
-ID, Drain-to-Source Current (A)
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP -10V
-7.5V
-5.0V
-4.5V
-3.5V
-3.0V
-2.5V
BOTTOM -2.25V
-2.25V
22.533.54
-VGS, Gate-to-Source Voltage (V)
10
100
1000
-ID, Drain-to-Source Current (A)
VDS = -25V
60µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
VGS = -4.5V
ID = -56A
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Pre-Irradiation IRHLNA797064, 2N7622U2
PRELIMINARY
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Temperature ( °C )
50
55
60
65
70
75
-V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
ID = -1.0mA
Fig 8. Typical Threshold Voltage Vs
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
TJ , Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
-VGS(th) Gate threshold Voltage (V)
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
246810 12
-VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
25
30
RDS(on), Drain-to -Source On Resistance (mΩ)
ID = -56A
TJ = 25°C
TJ = 150°C
Fig 5. Typical On-Resistance Vs
Gate Voltage
Fig 6. Typical On-Resistance Vs
Drain Current
020 40 60 80 100
-ID, Drain Current (A)
8
10
12
14
16
18
RDS(on), Drain-to -Source On Resistance (mΩ)
TJ = 25°C
TJ = 150°C
Vgs = -4.5V
IRHLNA797064, 2N7622U2 Pre-Irradiation
6www.irf.com
PRELIMINARY
Fig12. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
20
40
60
80
100
120
-I , Drain Current (A)
°
D
LIMITED BY PACKAGE
TC , Case Temperature (°C)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
110 100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
16000
C, Capacitance (pF)
VGS = 0V, f = 1 MHz
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
012345
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-ISD , Reverse Drain Current (A)
VGS = 0V
TJ = 150°C
TJ = 25°C
0 50 100 150 200 250 300
QG, Total Gate Charge (nC)
0
4
8
12
-VGS, Gate-to-Source Voltage (V)
VDS= -48V
VDS= -30V
VDS= -12V
ID = -56A
FOR TEST CIRCUIT
SEE FIGURE 17
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Pre-Irradiation IRHLNA797064, 2N7622U2
PRELIMINARY
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 13. Maximum Safe Operating Area
1 10 100
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on) 100µs
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05 SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
400
800
1200
1600
2000
2400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP -25A
-35.4A
BOTTOM -56A
P
t
t
DM
1
2
IRHLNA797064, 2N7622U2 Pre-Irradiation
8www.irf.com
PRELIMINARY
Fig 17b. Gate Charge Test Circuit
Fig 17a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
-4.5V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
Fig 16a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
VGS
VDD
+
-
Fig 16b. Unclamped Inductive Waveforms
tp
V
BR
DSS
I
AS
Fig 18a. Switching Time Test Circuit
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 18b. Switching Time Waveforms
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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Pre-Irradiation IRHLNA797064, 2N7622U2
PRELIMINARY
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L= 0.67mH
Peak IL = -56A, VGS = -10V
 ISD ≤ -56A, di/dt ≤ -380A/µs,
VDD ≤ -60V, TJ ≤ 150°C
Footnotes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2011
Case Outline and Dimensions — SMD-2