Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5339
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5339J)
• JANTX level (2N5339JX)
• JANTXV level (2N5339JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose switching transistor
• Low power
• NPN silicon transistor
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9201
• Reference document:
MIL-PRF-19500/560
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 100
Volts
Collector-Base Voltage VCBO 100
Volts
Emitter-Base Voltage VEBO 6
Volts
Collector Current, Continuous IC 5
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1
5.71
W
mW/°C
Thermal Resistance RθJC 17.5 °C/W
Operating Junction Temperature
Storage Temperature
TJ
TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5339
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 50 mA 100 Volts
Collector-Base Cutoff Current ICBO V
CB = 100 Volts 10 µA
Collector-Emitter Cutoff Current ICEO V
CE = 100 Volts 100 µA
Collector-Emitter Cutoff Current
ICEX1
ICEX2
VCE = 90Volts, VBE = 1.5Volts
VCE =90Volts, VBE = 1.5Volts,
TA = 150°C
10
10
µA
mA
Emitter-Base Cutoff Current IEBO V
EB = 6 Volts 100 µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 0.5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
IC = 5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
TA = -55°C
60
60
40
12
240
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
1.2
1.8 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
0.7
1.2 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 10 Volts, IC = 500 mA,
f = 10 MHz 3 15
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 250
pF
Open Circuit Input Capacitance CIBO VEB = 2 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz 1,000
pF
Switching Characteristics
Delay Time
Rise Time
td
tr IC = 2 A, IB1 = 200 mA 100
100 ns
Storage Time
Fall Time
ts
tf IC = 2 mA, IB1=IB2 = 200 mA 2
200
µs
ns
