151
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SD2438
160
150
5
8
1
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SD2438
100max
100max
150min
5000min∗
2.5max
3.0max
80typ
85typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=30mA
VCE=4V, IC=6A
IC=6A, IB=6mA
IC=6A, IB=6mA
VCE=12V, IE=–1A
VCB=10V, f=1MHz
Darlington 2SD2438
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
0
2
4
6
8
246
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
10mA
2.5mA
2.0mA
1.8mA
1.5mA
1.3mA
1.0mA
0.8mA
0.5mA
I
B
=0.3mA
02 0.5 1 5 8
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
1000
5000
10000
40000
Typ
0.2
1
4
0.5
1 10 100 10005 50 500 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
0
8
6
4
2
0 2 2.51
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
80
60
40
20
3.5
00 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10ms
10 5053 100 200
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
100ms
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=4A
IC=6A
IC=8A
(VCE=4V)
0.2 0.5 5 81
Collector Current IC(A)
DC Current Gain hFE
1000
500
5000
10000
50000
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –8
0
20
40
120
100
80
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Without Heatsink
Natural Cooling
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
60
RL
(Ω)
10
IC
(A)
6
VBB2
(V)
–2
IB2
(mA)
–6
ton
(
µ
s)
0.6typ
tstg
(
µ
s)
10.0typ
tf
(
µ
s)
0.9typ
IB1
( mA)
6
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0±0.3
16.2
9.5±0.2
5.5
15.6±0.2 5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
B
C
E
(70Ω)
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
