© Semiconductor Components Industries, LLC, 2009
June, 2009 Rev. 3
1Publication Order Number:
Z0103MN/D
Z0103MN, Z0107MN,
Z0109MN
Sensitive Gate Triac Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 V
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
TJ = 40 to +125°C)
VDRM,
VRRM
600 V
OnState Current RMS (TC = 80°C)
(Full Sine Wave 50 to 60 Hz)
IT(RMS) 1.0 A
Peak Nonrepetitive Surge Current (One Full
Cycle Sine Wave, 60 Hz, TC = 25°C)
ITSM 8.0 A
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
I2t 0.4 A2s
Average Gate Power (TC = 80°C, t v 8.3 ms) PG(AV) 1.0 W
Peak Gate Current (t v 20 ms, TJ = +125°C) IGM 1.0 A
Operating Junction Temperature Range TJ40 to
+125
°C
Storage Temperature Range Tstg 40 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient PCB
Mounted per Figure 1
RqJA 156 °C/W
Thermal Resistance, JunctiontoTab Meas-
ured on MT2 Tab Adjacent to Epoxy
RqJT 25 °C/W
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
TL260 °C
TRIAC
1.0 AMPERE RMS
600 VOLTS
MT1
G
MT2
4
23
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
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SOT223
CASE 318E
STYLE 11
MARKING
DIAGRAM
AYW
10XMN G
G
A = Assembly Location
Y = Year
W = Work Week
10XMN = Device Code
x = 3, 7, 9
G= PbFree Package
(Note: Microdot may be in either location)
1
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Z0103MNT1G SOT223
(PbFree)
1000/Tape & Reel
Z0107MNT1G SOT223
(PbFree)
1000/Tape & Reel
Z0109MNT1G SOT223
(PbFree)
1000/Tape & Reel
Z0103MN, Z0107MN, Z0109MN
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(VD = Rated VDRM, VRRM; Gate Open) TJ = +125°C
IDRM, IRRM
5.0
500
mA
mA
ON CHARACTERISTICS
Peak OnState Voltage
(ITM = "1.4 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
VTM 1.56 V
Gate Trigger Current (Continuous dc) Z0103MN
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
0.15
0.15
0.15
0.25
3.0
3.0
3.0
5.0
mA
Gate Trigger Current (Continuous dc) Z0107MN
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
0.15
0.15
0.15
0.25
5.0
5.0
5.0
7.0
mA
Gate Trigger Current (Continuous dc) Z0109MN
(VD = 12 Vdc, RL = 30 Ohms)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
0.15
0.15
0.15
0.25
10
10
10
10
mA
Latching Current (VD = 12 V, IG = 1.2 x IGT) Z0103MN
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
7.0
15
7.0
7.0
mA
Latching Current (VD = 12 V, IG = 1.2 x IGT) Z0107MN
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
10
20
10
10
mA
Latching Current (VD = 12 V, IG = 1.2 x IGT) Z0109MN
MT2(+), G(+) All Types
MT2(+), G() All Types
MT2(), G() All Types
MT2(), G(+) All Types
IL
15
25
15
15
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ohms) VGT 1.3 V
Gate NonTrigger Voltage (VD = 12 V, RL = 30 Ohms, TJ = 125°C)
All Four Quadrants
VGD 0.2 V
Holding Current (Z0103MA)
(VD = 12 Vdc, Initiating Current = 50 mA, Gate Open) (Z0107MA, Z0109MA)
IH
7.0
10
mA
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 0.84 A, Commutating dv/dt = 1.5 V/ms, Gate Open,
TJ = 110°C, f = 250 Hz, with Snubber)
di/dt(c) 1.6 A/ms
Critical Rate of Rise of OffState Voltage (VD = 67% Rated VDRM, Exponential
Waveform, Gate Open, TJ = 110°C) Z0103MN
Z0107MN
Z0109MN
dv/dt
10
20
50
30
60
75
V/ms
Repetitive Critical Rate of Rise of OnState Current, TJ = 125°C
Pulse Width = 20 ms, IPKmax = 15 A, diG/dt = 1 A/ms, f = 60 Hz
di/dt 20 A/ms
Z0103MN, Z0107MN, Z0109MN
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT + IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
Z0103MN, Z0107MN, Z0109MN
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4
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
0.079
2.0
0.079
2.0
0.059
1.5
0.091
2.3
0.091
2.3
mm
inches
0.472
12.0
0.096
2.44
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.984
25.0
0.244
6.2
0.059
1.5
0.059
1.5
0.096
2.44
0.096
2.44
0.059
1.5
0.059
1.5
0.15
3.8
Z0103MN, Z0107MN, Z0109MN
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5
TA, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C)°
110
100
90
80
60
50
70
IT(RMS), RMS ON‐STATE CURRENT (AMPS)
110
100
90
80
60
50
40
30
20
70
TA, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C)°
Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
FOIL AREA (cm2)
θJA, JUNCTION TO AMBIENT THERMAL
vT
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
IT, INSTANTANEOUS ON‐STATE CURRENT (AMPS)
IT(RMS), RMS ON‐STATE CURRENT (AMPS)
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
10
1.0
0.1
0.01 5.04.03.02.0 30
60
70
80
90
160
2.00
110
0.5
0.30.20.10
IT(RMS), RMS ON‐STATE CURRENT (AMPS)
0.70.60.50.40.30.20.10
0.50.40.30.20.10
1.00 4.0 6.0 8.0 10
100
90
80
60
50
40
30
20
0.6 0.7 0.8
RESISTANCE, C/W°
150
140
130
120
110
40
50
100
TYPICAL
MAXIMUM
4
123
MINIMUM
FOOTPRINT = 0.076 cm2
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
PCB WITH TAB AREA
AS SHOWN
0.4
70
TA, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)°
dc
30°60°
90°
α = 180°
dc
30°
MINIMUM FOOTPRINT
50 OR 60 Hz
120°
T(tab), MAXIMUM ALLOWABLE
TAB TEMPERATURE ( C)°
110
105
100
95
90
85
80
IT(RMS), ON‐STATE CURRENT (AMPS)
Figure 7. Current Derating
Reference: MT2 Tab
0.50.40.30.20.10 0.6 0.7 0.8
120°
dc
30°
120°
R
L
L
90°
120°
90°
60°
30°
90°
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
60°
α = 180°
1.0 cm2 FOIL AREA
50 OR 60 Hz
dc
α = 180°α = 180°
REFERENCE:
FIGURE 1
60°
α
α
α
α
α = CONDUCTION
ANGLE
α
α
α
α
4.0 cm2 FOIL AREA
α = CONDUCTION
ANGLE
α = CONDUCTION
ANGLE
α = CONDUCTION
ANGLE
Z0103MN, Z0107MN, Z0109MN
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6
COMMUTATING dv/dt
dv/dt , (V/ S)
cμ
Figure 8. Power Dissipation
P(AV), MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
1.0
0.8
0.7
0.5
0.4
0.2
0
IT(RMS), RMS ON‐STATE CURRENT (AMPS)
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
0.50.40.30.20.10 0.6 0.7 0.8
dc 90°
120°
10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
t, TIME (SECONDS)
r(t), TRANSIENT THERMAL
0.01
1.0
0.0010.0001
1.0
0.01 0.1 10 100
10
RESISTANCE (NORMALIZED)
0.1
10
1.0
TJ, JUNCTION TEMPERATURE (°C)
90807060 100 110
VDRM = 200 V
400 Hz
300 Hz
0.9
0.6
0.3
0.1
1.0
110°
VDRM
ITM
60 Hz
tw
30°
f = 1
2 tw
COMMUTATING dv/dt
dv/dt , (V/ S)
cμ
60°
80°
180 Hz
α = 180°60°
(dińdt)c+
6fITM
1000
100°
α
α
α = CONDUCTION
ANGLE
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c
LL1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE TRIGGER
NON‐POLAR
CL
51 W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
RS
ADJUST FOR
dv/dt(c)
CS
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
Z0103MN, Z0107MN, Z0109MN
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7
STATIC dv/dt (V/ s)
60
20
RG, GATE - MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 13. Exponential Static dv/dt versus
Gate Main Terminal 1 Resistance
10 10,000
Figure 14. Typical Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (°C)
0.1
10
0-40 20 100
I
1.0
V , GATE TRIGGER VOLTAGE (VOLTS)
1.1
0.3
TJ, JUNCTION TEMPERATURE (°C)
-40
μ
GT
600 Vpk
TJ = 110°C
IGT4
IGT1
50
40
30
1000100
IGT3
IGT2
GT, GATE TRIGGER CURRENT (mA)
-20 40 60 80
0 20 100-20 40 60 80
VGT2
VGT1
VGT3 VGT4
MAIN TERMINAL #2
POSITIVE
MAIN TERMINAL #1
POSITIVE
HOLDING CURRENT (mA)
6.0
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Holding Current Variation
-40
5.0
4.0
3.0
2.0
1.0
I ,
H
0 20 100-20 40 60 80
MAIN TERMINAL #2
POSITIVE
MAIN TERMINAL #1
POSITIVE
Figure 16. Gate Trigger Voltage Variation
Z0103MN, Z0107MN, Z0109MN
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8
PACKAGE DIMENSIONS
SOT223 (TO261)
CASE 318E04
ISSUE L
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
e1
0°10°0°10°
q
q
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Z0103MN/D
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