VEMI35AA-HAF
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Rev. 1.1, 08-Jan-2019 1Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3-Channel EMI-Filter with ESD-Protection
MARKING (example only)
Dot = pin 1 marking
YY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS
FEATURES
• Ultra compact LLP75-7L package
• 3-channel EMI-filter and ESD-protection
• Low leakage current
• Line resistance RS = 100
• Typical cut off frequency f3dB = 100 MHz
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu)
(no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20517
1
19423
7
123
654
21001
XX
YY
click logo to get started
Available
Models
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY
VEMI35AA-HAF VEMI35AA-HAF-G-08 3000 15 000
PACKAGE DATA
DEVICE NAME PACKAGE
NAME
TYPE
CODE WEIGHT MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL SOLDERING CONDITIONS
VEMI35AA-HAF LLP75-7L 9F 4.2 mg UL 94 V-0 MSL level 1
(according J-STD-020) Peak temperature max. 260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current All I/O pin to pin 7; acc. IEC 61000-4-5;
tp = 8/20 μs; single shot IPPM 4A
ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses VESD
± 30 kV
Air discharge acc. IEC 61000-4-2; 10 pulses ± 30
Operating temperature Junction temperature TJ-40 to +125 °C
Storage temperature TSTG -55 to +150 °C
VEMI35AA-HAF
www.vishay.com Vishay Semiconductors
Rev. 1.1, 08-Jan-2019 2Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE
With the VEMI35AA-HAF 3 different signal or data lines can be filtered and clamped to ground. Due to the different clamping
levels in forward and reverse direction the clamping behavior is Bidirectional and Asymmetric (BiAs).
The 3 independent EMI-filter are placed between
pin 1 and pin 6
pin 2 and pin 5, and
pin 3 and pin 4.
They all are connected to a common ground pin 7 on the backside of the package. Each filter is symmetrical so that all ports
(pin 1 to 6) can be used as input or output.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output to ground.
These Z-diodes are characterized by the breakthrough voltage level (VBR) and the diode capacitance (CD). Below the
breakthrough voltage level the Z-diodes can be considered as capacitors. Together with these capacitors and the line
resistance RS between input and output the device works as a low pass filter. Low frequency signals (f < f3dB) pass the filter
while high frequency signals (f > f3dB) will be shorted to ground through the diode capacitances CD.
Each filter is symmetrical so that both ports can be used as input or output.
19420
19421
19424
L1
IN
L2
IN
L3
IN
L1
OUT
L2
OUT
L3
OUT
7
1
2
3
6
5
4
VEMI35AA-HAF
www.vishay.com Vishay Semiconductors
Rev. 1.1, 08-Jan-2019 3Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
ELECTRICAL CHARACTERISTICS All inputs (pin 1, 2, and 3) to ground (pin 7)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of channels which can be protected Nchannel - - 3 channel
Reverse stand off voltage Max. reverse working voltage VRWM --5V
Reverse voltage at IR = 1 μA VR5--V
Reverse current at VR = 5 V IR--1μA
Reverse break down voltage IR = 1 mA VBR 6--V
Pos. clamping voltage
at IPP = 1 A applied at the input, measured at the
output; acc. IEC 61000-4-5 VC-out --7.8V
at IPP = IPPM = 4 A applied at the input, measured
at the output; acc. IEC 61000-4-5 VC-out --8V
Neg. clamping voltage
at IPP = -1 A applied at the input, measured at the
output; acc. IEC 61000-4-5 VC-out -1 - - V
at IPP = IPPM = -4 A applied at the input,
measured at the output; acc. IEC 61000-4-5 VC-out -1.2 - - V
Input capacitance
at VR = 0 V; f = 1 MHz CIN -60-pF
at VR = 2.5 V; f = 1 MHz CIN -37-pF
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2 VCESD -7.5- V
Line resistance Measured between input and output;
IS = 10 mA RS90 100 110
Cut-off frequency VIN = 0 V; measured in a 50 system f3dB -100-MHz
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
VEMI35AA-HAF
www.vishay.com Vishay Semiconductors
Rev. 1.1, 08-Jan-2019 4Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Current IF vs. Forward Voltage VF
Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR
Fig. 5 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Fig. 6 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 7 - Typical Small Signal Transmission (S21)
at ZO = 50
0.001
0.01
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9 1
VF (V)
IF (mA)
21086
0
1
2
3
4
5
6
7
8
0.01 0.1 1 10 100 1000 10 000
I
R
(µA)
V
R
(V)
21087
0
2
4
6
8
10
12
0123456
IPP (A)
VC (V)
21088
Measured
acc. IEC 61000-4-5
(8/20 µs - wave form)
Input clamping voltage
Output clamping voltage
VC
0
10
20
30
40
50
60
70
012345
VR (V)
CD (pF)
21089
f = 1 MHz
- 40
- 35
- 30
- 25
- 20
- 15
- 10
- 5
0
1 10 100 1000 10 000
Frequency in MHz
Transmission (S21) in dB
VINPUT = 5 V
VINPUT = 0 V
Measured in a 50 Ω system
21090
VEMI35AA-HAF
www.vishay.com Vishay Semiconductors
Rev. 1.1, 08-Jan-2019 5Document Number: 83314
For technical questions, contact: EMIFilter@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): LLP75-7L
1.05 (0.041)
0.5 (0.020)
0.95 (0.037)
Heat sink
0.3 (0.012)
0.2 (0.008)
0.3 (0.012)
0.2 (0.008)
0.3 (0.012)
0.2 (0.008)
0.55 (0.022)
0.45 (0.018)
0.6 (0.024)
0.25 (0.010)
0.6 (0.024)
0.54 (0.021)
0.05 (0.002)
0 (0.000)
0.15 (0.006)
1.65 (0.065)
1.55 (0.061)
1.65 (0.065)
1.55 (0.061)
Pin 1 marking
0.5 (0.020) 0.5 (0.020)
0.3 (0.012) 0.3 (0.012)
0.15 (0.006) 0.15 (0.006)
0.5 (0.020)
0.5 (0.020)
1 (0.039)
0.25 (0.010)
Solder resist mask
Solder pad
Document no.:S8-V-3906.02-014 (4)
20500
Created - Date: 04. April 2006
Foot print recommendation:
1 (0.039)
1 (0.039)
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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