ఎྯ
Switching Transistors
Switching Transistors ఎྯ FHS2907/A
2
FHS2907 -40
Collector-Emitter Breakdown
Voltage(3) 集電極-發射極擊穿電壓 V(BR)CEO FHS2907A IC=-10mAdc,
IB=0 -60 — — Vdc
FHS2907
Collector-Base Breakdown
Voltage集電極-基極擊穿電壓 V(BR)CBO FHS2907A IC=-10µ Adc,
IE=0 -60 — — Vdc
FHS2907
Emitter-Base Breakdown Voltage
發射極-基極擊穿電壓 V(BR)EBO FHS2907A IE=-10μAdc,
IC=0 -5.0 — — Vdc
FHS2907 35
— —
FHS2907A Ic=-0.1mAdc,
VCE=-10Vdc 75 — —
FHS2907 50
— —
FHS2907A Ic=-1mAdc,
VCE=-10Vdc 100 — —
FHS2907 75
— —
FHS2907A Ic=-10mAdc,
VCE=-10Vdc 100 — —
FHS2907
FHS2907A Ic=-150mAdc,
VCE=-10Vdc 100 — 300
FHS2907 30
— —
DC Current Gain
直流電流增益 hFE
FHS2907A Ic=-500mAdc,
VCE=-10Vdc 50 — —
—
IC=-150mAdc,
IB=-15mAdc — — -0.4
Collector-Emitter Saturation
Voltage(3)集電極-發射極飽和壓降 VCE(sat)FHS2907/
A Ic=-500mAdc,
IB=-50mAdc — — -2.6 Vdc
Ic=-150mAdc,
IB=-15mAdc — — -1.3
Base-Emitter Saturation Voltage
基極-發射極飽和壓降 V BE(sat) FHS2907/A IC=-500mAdc,
IB=-50mAdc — — -2.6 Vdc
Current-Gain-Bandwidth Product 電
流增益-帶寬乘積 fT FHS2907/A Ic=-50mAdc,
VCE=-20Vdc,
f=100MHz 200 — — MHz
Output Capacitance
輸出電容 Cobo FHS2907/A VCB=-10Vdc,
IE=0,f=1.0MHz — — 8.0 pF
Input Capacitance
輸入電容 Cibo FHS2907/A VEB=-2.0Vdc,
IC=0,f=1.0MHz — — 30 pF
SWITCHING CHARACTERISTICS 開關特性
T urn-On Time 開啟時間 ton — — 45
Delay T ime 延遲時間 td — — 10
Rise T ime 上升時間 tr
VCC=-30Vdc,IC=-150mAdc,
IB1=-15mAdc — — 40 nS
Storage Time 儲存時間 ts — — 80
Fall T i me 下降時間 tf — — 30
T urn-Of f Time 關斷時間 toff
VCC=-6.0Vdc, IC=-150mAdc,
IB1= IB2=-15mAdc — — 100 nS
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in, 99.5%alumina.
3. Pulse Width≤300µS;Duty Cycle≤2.0%.