pF
VF
CT
250
VR
TEST CONDITION
IF = 1mA
VR = 40V
IF = 10mA
Power Dissipation Ta = 25oCPD
DESCRIPTION SYMBOL
Storage Temperature Range
40
MIN
IF
Surge Forward Current t=10ms IFSM
120
40
IR = 10uA
- 55 to +150
150
VALUE
MAX
0.38
VR = 30V 1
UNITS
K/W
430
Junction Temperature
mA
mW
Tstg oC
Tj
200
DESCRIPTION SYMBOL UNITS
Forward Current
V
mA
VR
*Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm
Thermal Resistance
From junction to ambient Rth(j-a)*
Reverse Voltage
5.00
Reverse Current IRVR = 40V 10
0.50
Forward Voltage
Diode Capacitance
Reverse Braekdown Voltage V
uA
IF = 40mA 1.00
V
SILICON PLANAR SCHOTTKY DIODE
BAS40
BAS40-04
BAS40-05
BAS40-06
Electrical Characteristics (Ta=25 oC unless otherwise specified) (per diode)
Absolute Maximum Ratings (per diode)
Unit: inch (mm)
SOT-23 SMD Package
Pin Configuration:
1. ANODE
2. CATHODE
3. ANODE/CATHODE
Pin Configuration:
1. ANODE
2. NC
3. CATHODE
Pin Configuration:
1. ANODE
2. ANODE
3. CATHODE
Pin Configuration:
1. CATHODE
2. CATHODE
3. ANODE
General Purpose Schottky Diode for High Speed switching
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