Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 6 1Publication Order Number:
1N6267A/D
1N6267A Series
1500 Watt Mosorb Zener
Transient Voltage
Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductors exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
Working Peak Reverse Voltage Range − 5.8 V to 214 V
Peak Power − 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 A Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
These devices are manufactured with a Pb−Free external lead
finish only*
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16 in from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D. Preferred devices are recommended choices for future use
and best overall value.
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week
Cathode Anode
Device Package Shipping
ORDERING INFORMATION
1.5KExxxA Axial Lead 500 Units/Box
1.5KExxxARL4 Axial Lead 1500/Tape & Reel
1N6xxxA Axial Lead 500 Units/Box
1N6xxxARL4* Axial Lead 1500/Tape & Reel
L
1N6
xxxA
1.5KE
xxxA
YYWW
*1N6302A Not Available in 1500/Tape & Reel
MARKING DIAGRAM
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For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
1N6267A Series
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MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ TL 25°C PPK 1500 W
Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8 in
Derated above TL = 75°C
PD5.0
20
W
mW/°C
Thermal Resistance, Junction−to−Lead RJL 20 °C/W
Forward Surge Current (Note 2) @ TA = 25°C IFSM 200 A
Operating and Storage
Temperature Range TJ, Tstg 65 to +175 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max., IF (Note 3) = 100 A)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
VBR Maximum Temperature Coefficient of VBR
IFForward Current
VFForward Voltage @ IF
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
VRWM
Breakdown Voltage VC @ IPP (Note 7)
JEDEC
Device
V
RWM
(Note 5) IR @ VRWM VBR (Note 6) (Volts) @ ITVCIPP VBR
Device
D
ev
i
ce
(Note 4) (Volts) (A) Min Nom Max (mA) (Volts) (A) (%/°C)
1.5KE6.8A 1N6267A 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057
1.5KE7.5A 1N6268A 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061
1.5KE8.2A 1N6269A 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065
1.5KE9.1A 1N6270A 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068
1.5KE10A 1N6271A 8.55 10 9.5 10 10.5 1 14.5 103 0.073
1.5KE11A 1N6272A 9.4 5 10.5 11 11.6 1 15.6 96 0.075
1.5KE12A 1N6273A 10.2 5 11.4 12 12.6 1 16.7 90 0.078
1.5KE13A 1N6274A 11.1 5 12.4 13 13.7 1 18.2 82 0.081
1.5KE15A 1N6275A 12.8 5 14.3 15 15.8 1 21.2 71 0.084
1.5KE16A 1N6276A 13.6 5 15.2 16 16.8 1 22.5 67 0.086
1.5KE18A 1N6277A 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088
1.5KE20A 1N6278A 17.1 5 19 20 21 1 27.7 54 0.09
1.5KE22A
1N6279A
18.8 5 20.9 22 23.1 1 30.6 49 0.092
1.5KE24A 1N6280A 20.5 5 22.8 24 25.2 1 33.2 45 0.094
1.5KE27A 1N6281A 23.1 5 25.7 27 28.4 1 37.5 40 0.096
1.5KE30A 1N6282A 25.6 5 28.5 30 31.5 1 41.4 36 0.097
1.5KE33A 1N6283A 28.2 5 31.4 33 34.7 1 45.7 33 0.098
1.5KE36A 1N6284A 30.8 5 34.2 36 37.8 1 49.9 30 0.099
1.5KE39A 1N6285A 33.3 5 37.1 39 41 1 53.9 28 0.1
1.5KE43A 1N6286A 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101
1.5KE47A 1N6287A 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101
1.5KE51A 1N6288A 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102
1.5KE56A
1N6289
47.8 5 53.2 56 58.8 1 77 19.5 0.103
1.5KE62A 1N6290A 53 5 58.9 62 65.1 1 85 17.7 0.104
1.5KE68A 1N6291A 58.1 5 64.6 68 71.4 1 92 16.3 0.104
1.5KE75A 1N6292A 64.1 5 71.3 75 78.8 1 103 14.6 0.105
1.5KE82A 1N6293A 70.1 5 77.9 82 86.1 1 113 13.3 0.105
1.5KE91A 1N6294A 77.8 5 86.5 91 95.5 1 125 12 0.106
1.5KE100A 1N6295A 85.5 5 95 100 105 1 137 11 0.106
1.5KE110A 1N6296A 94 5 105 110 116 1 152 9.9 0.107
1.5KE120A 1N6297A 102 5 114 120 126 1 165 9.1 0.107
1.5KE130A 1N6298A 111 5 124 130 137 1 179 8.4 0.107
1.5KE150A 1N6299A 128 5 143 150 158 1 207 7.2 0.108
1.5KE160A 1N6300A 136 5 152 160 168 1 219 6.8 0.108
1.5KE170A 1N6301A 145 5 162 170 179 1 234 6.4 0.108
1.5KE180A 1N6302A* 154 5 171 180 189 1 246 6.1 0.108
1.5KE200A 1N6303A 171 5 190 200 210 1 274 5.5 0.108
1.5KE220A 185 5 209 220 231 1 328 4.6 0.109
1.5KE250A 214 5 237 250 263 1 344 5 0.109
Devices listed in
bold, italic
are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
1N6267A Series
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4
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A= 25 C°
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25 50 75 100 125 150 175 200
PD, STEADY STATE POWER DISSIPATION (WATTS)
TL, LEAD TEMPERATURE (°C)
3/8
3/8
0
0
100
50
001 2 3 4
t, TIME (ms)
, VALUE (%)
tr
tP
PEAK VALUE − IPP
HALF VALUE − IPP
2
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP
.
tr 10s
1s 10s 100s 1 ms 10 ms
100
10
1
tP
, PULSE WIDTH
PPK, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1s
IPP
Figure 3. Capacitance versus Breakdown Voltage
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
VBR, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @ VRWM
MEASURED @
ZERO BIAS
Figure 4. Steady State Power Derating Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
VBR, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ VRWM
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1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3 0.5 0.7 1 2 3 5 7 10 20 30
VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
0.3 0.5 0.7 1 2 3 5 7 10 20 30
VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
IT, TEST CURRENT (AMPS)
VBR(NOM)=6.8 to 13V
TL=25°C
tP=10s
VBR(NOM)=6.8 to 13V
20V
24V 43V
75V
180V
120V
20V
24V 43V
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 s
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
TL=25°C
tP=10s
IT, TEST CURRENT (AMPS)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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6
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Vin
VL
V
Vin
Vin (TRANSIENT)
VL
td
V
VL
Vin (TRANSIENT)
Zin
LOAD
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
tt
Figure 8. Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a “CA”
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for VF which does not apply).
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a “CA” suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.
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OUTLINE DIMENSIONS
MOSORB
CASE 41A−04
ISSUE D
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.335 0.374 8.50 9.50
INCHES
B0.189 0.209 4.80 5.30
D0.038 0.042 0.96 1.06
K1.000 −−− 25.40 −−−
P−−− 0.050 −−− 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A−01 THRU 041A−03 OBSOLETE, NEW
STANDARD 041A−04.
D
K
P
PA
K
B
1N6267A Series
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
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Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
1N6267A/D
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
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