TJ70A06J3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ70A06J3 1. Applications * Relay Drivers * DC-DC Converters * Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 5.6 m (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 A (max) (VDS = -60 V) (3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220SIS unless otherwise specified) 25 4. Absolute Maximum Ratings (Note) (Ta = 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS -60 Gate-source voltage VGSS 20 Drain current (DC) (Note 1) ID -70 Drain current (pulsed) (Note 1) IDP -280 PD 54 W (Note 2) EAS 685 mJ IAR -70 A Channel temperature (Note 3) Tch 175 Storage temperature (Note 3) Tstg -55 to 175 Power dissipation (Tc = 25) Single-pulse avalanche energy Avalanche current Note: A Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2011-09-28 Rev.1.0 TJ70A06J3 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 2.78 /W Channel-to-ambient thermal resistance Rth(ch-a) 62.5 Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = -25 V, Tch = 25 (initial), L = 190 H, RG = 25 , IAR = -70 A Note 3: The definitions of the absolute maximum channel and storage temperatures are based on AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2011-09-28 Rev.1.0 TJ70A06J3 6. Electrical Characteristics unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current IGSS VGS = 16 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage (Note 4) Min Typ. Max Unit 10 A IDSS VDS = -60 V, VGS = 0 V -10 V(BR)DSS ID = -10 mA, VGS = 0 V -60 V(BR)DSX ID = -10 mA, VGS = 20 V -35 Vth VDS = -10 V, ID = -1 mA -0.8 -2.0 RDS(ON) VGS = -4.5 V, ID = -35 A 7 10 VGS = -10 V, ID = -35 A 5.6 8 Gate threshold voltage Drain-source on-resistance Test Condition V m Note 4: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min Typ. Max Unit 9810 pF Reverse transfer capacitance Crss 1130 Output capacitance Coss 1505 Switching time (rise time) tr 16 Switching time (turn-on time) ton 33 tf 120 toff 400 Switching time (fall time) Switching time (turn-off time) See Figure 6.2.1. ns Fig. 6.2.1 Switching Time Test Circuit unless otherwise specified) 6.3. Gate Charge Characteristics (Ta = 25 25 Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Test Condition VDD -48 V, VGS = -10 V, ID = -70 A Min Typ. Max Unit 246 nC Gate-source charge 1 Qgs1 30 Gate-drain charge Qgd 71 unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Reverse drain current (DC) (Note 5) Reverse drain current (pulsed) (Note 5) Symbol Test Condition Min Typ. Max Unit IDR -70 A -280 VDSF IDR = -70 A, VGS = 0 V 1.2 Reverse recovery time trr 84 ns Qrr IDR = -70 A, VGS = 0 V dIDR/dt = 50 A/s Reverse recovery charge 82 nC Diode forward voltage IDRP V Note 5: Ensure that the channel temperature does not exceed 175. 3 2011-09-28 Rev.1.0 TJ70A06J3 7. Marking (Note) Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2011-09-28 Rev.1.0 TJ70A06J3 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2011-09-28 Rev.1.0 TJ70A06J3 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Tc (Guaranteed Maximum) 6 2011-09-28 Rev.1.0 TJ70A06J3 Fig. 8.12 rth/Rth(ch-c) - tw (Guaranteed Maximum) Fig. 8.14 EAS - Tch (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Fig. 8.15 Test Circuit/Waveform Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2011-09-28 Rev.1.0 TJ70A06J3 Package Dimensions Unit: mm Weight: 1.7 g (typ.) Package Name(s) TOSHIBA: 2-10U1S Nickname: TO-220SIS 8 2011-09-28 Rev.1.0 TJ70A06J3 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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