ON Semiconductor MJE18204 MJF18204 SWITCHMODE NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS The MJE/MJF18204 have an application specific state-of-the-art die dedicated to the electronic ballast ("light ballast") and power supply applications. * Improved Global Efficiency Due to Low Base Drive Requirements: * * * High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Fast Turn-Off (No Current Tail) Full Characterization at 125C ON Semiconductor "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions Two Package Choices: Standard TO-220 or Isolated TO-220 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIIIIII III IIII IIII IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIII IIII III IIIIIII IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIII III IIII IIII III IIIIIII IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIII III IIII IIII III IIIIIII IIIIIIIIIIIII III IIII IIII III IIIIIIIIIIIII III IIIIIII III IIIIIIIIIIIII III IIIIIII III MAXIMUM RATINGS Rating Symbol MJE18204 MJF18204 Unit Collector-Emitter Voltage VCEO 600 Vdc Collector-Base Voltage VCBO 1200 Vdc Collector-Emitter Voltage VCES 1200 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 5 10 Adc Base Current -- Continuous -- Peak (1) IB IBM 2 4 Adc RMS Isolation Voltage (2) (for 1 sec, R.H. 30%) TC = 25C Per Figure 22 Per Figure 23 Per Figure 24 *Total Device Dissipation @ TC = 25C *Derate above 25C VISOL1 VISOL2 VISOL3 PD 75 0.6 4500 3500 1500 Volts 35 0.28 Watt W/C TJ, Tstg -65 to 150 C Rating Symbol MJE18204 MJF18204 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient RJC RJA Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds TL Operating and Storage Temperature CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS 1.65 62.5 3.55 62.5 260 C/W CASE 221D-02 TO-220 FULLPACK C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 2 1 Publication Order Number: MJE18204/D MJE18204 MJF18204 IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIII IIII IIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIII IIIII IIII IIIII IIIII III IIII IIII III IIIIIIII IIIII IIII IIIII IIIII III IIII IIII III IIIIIIII IIIII IIII IIIII IIIII III IIII IIII III IIIIIIII IIIII IIII IIIII IIIII III IIII IIII III IIIIIIII IIIII IIII IIIII IIIII III IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO 600 660 VCEO(sus) VCER(sus) 550 600 630 700 Collector-Base Breakdown Voltage (ICBO = 1 mA, IE = 0) VCBO 1200 1300 Vdc Emitter-Base Breakdown Voltage (IEBO = 1 mA, IC = 0) VEBO 10 12.9 Vdc OFF CHARACTERISTICS Collector-Emitter Voltage (IC = 1 mA, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) (IC = 200 mA, L = 25 mH, R = 2 ) Vdc Vdc Collector Cutoff Current (VCE = 600 V, IB = 0) Collector Cutoff Current (VCE = 550 V, IB = 0) @ TC = 25C @ TC = 125C ICEO 200 2000 Adc Collector Cutoff Current (VCE = Rated VCES, VBE = 0) @ TC = 25C @ TC = 125C @ TC = 125C ICES 100 500 100 Adc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO 100 Adc Emitter-Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO 100 Adc Collector Cutoff Current (VCE = 1000 V, VBE = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) VBE(sat) Vdc 0.83 0.92 1.1 1.25 @ TC = 25C @ TC = 125C 0.3 0.7 1 1.25 @ TC = 25C @ TC = 125C 0.3 0.8 0.6 1.25 VCE(sat) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) (IC = 2 Adc, IB = 0.4 Adc) Vdc hFE DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) 18 @ TC = 25C @ TC = 125C 10 8 13 (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25C @ TC = 125C 5 4 8 6 -- (IC = 5 mAdc, VCE = 5 Vdc) @ TC = 25C @ TC = 125C 10 25 33 -- 13 MHz (IC = 1 Adc, VCE = 1 Vdc) 35 -- @ TC = 25C @ TC = 125C 23 22 DYNAMIC CHARACTERISTICS fT Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Input Capacitance (VEB = 8 Vdc) Cob 200 pF Cib 2000 pF DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 s and 3 s respectively after rising IB1 reaches 90% of final IB1 IC = 2 Adc IB1 = 660 mAdc VCC = 300 V IC = 2 Adc IB1 = 0.4 0 4 Adc VCC = 300 V @ 3 s @ 3 s @ TC = 25C VCE(dsat) 2.5 @ TC = 125C 7.5 @ TC = 25C 7 @ TC = 125C 15 http://onsemi.com 2 V MJE18204 MJF18204 IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III IIIIIIII IIIIIIII IIIII IIIII III IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) continued Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-on Time Turn-off Time Turn-on Time Turn-off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc @ TC = 25C ton 105 175 ns @ TC = 25C toff 1.75 2.5 s IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 0 4 Adc VCC = 300 Vdc @ TC = 25C ton 95 200 ns @ TC = 25C toff 3.5 4.5 s 150 ns @ TC = 25C td 70 IC = 0.7 0 7 Adc, Adc IB1 = 50 mAdc IB2 = 0.4 Adc VCC = 125 Vdc PW = 70 s tr 210 400 ns Turn-on Time Turn-off Time @ TC = 25C ts 0.9 1.2 s tf 275 450 ns SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time @ TC = 25C @ TC = 125C tf 110 95 175 ns @ TC = 25C @ TC = 125C ts 1.35 1.9 2 s Crossover Time @ TC = 25C @ TC = 125C tc 150 115 250 ns Fall Time @ TC = 25C @ TC = 125C tf 120 180 200 ns @ TC = 25C @ TC = 125C ts 1.9 2.35 2.75 s @ TC = 25C @ TC = 125C tc 190 180 300 ns @ TC = 25C tf 185 300 ns @ TC = 25C ts 4 5 s @ TC = 25C tc 350 500 ns Storage Time Storage Time IC = 1 Adc IB1 = 0.1 Adc IB2 = 0.5 Adc IC = 2 Adc IB1 = 0.4 Adc IB2 = 1 Adc Crossover Time Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 0 4 Adc Ad http://onsemi.com 3 MJE18204 MJF18204 TYPICAL STATIC CHARACTERISTICS 100 100 TJ = 25C TJ = 125C hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C VCE = 1 V TJ = -20C 10 1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 TJ = -20C 1 0.01 10 Figure 1. DC Current Gain @ 1 Volt TJ = 25C VCE , VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 10 2 VCE = 5 V TJ = 125C TJ = 25C TJ = -20C 4A 3A 1 2A 1.5 A IC = 1 A 1 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 10 10 100 1000 IB, BASE CURRENT (mA) 10000 Figure 4. Collector Saturation Region Figure 3. DC Current Gain @ 5 Volts 10 1.5 IC/IB = 10 1 VBE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 2. DC Current Gain @ 3 Volts 100 10 VCE = 3 V TJ = 25C IC/IB = 5 0.1 1 TJ = -20C 0.5 TJ = 125C TJ = 125C TJ = 25C 0.01 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25C 0 0.01 10 Figure 5. Collector-Emitter Saturation Voltage IC/IB = 5 IC/IB = 10 1 0.1 IC, COLLECTOR CURRENT (AMPS) Figure 6. Base-Emitter Saturation Region http://onsemi.com 4 10 MJE18204 MJF18204 TYPICAL STATIC CHARACTERISTICS 10000 1600 1000 1400 Cib (pF) Cob (pF) 100 IC/IB = 10 1200 t, TIME (ns) C, CAPACITANCE (pF) TJ = 25C f(test) = 1 MHz 1000 IC/IB = 5 800 600 TJ = 125C TJ = 25C 400 IB1 = IB2 VCC = 300 V PW = 20 s 200 10 1 10 VR, REVERSE VOLTAGE (VOLTS) 0 100 0.5 Figure 7. Capacitance 8 TJ = 125C TJ = 25C 7 6 IB1 = IB2 VCC = 300 V PW = 20 s 5 4 3 1 1 1.5 2 2.5 3 3.5 4 IC, COLLECTOR CURRENT (AMPS) 4.5 2 5 6 IC/IB = 10 0.5 1500 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 1000 t, TIME (ns) t si , STORAGE TIME (s) 5 1 2 2.5 1.5 IC, COLLECTOR CURRENT (AMPS) 3 4 TJ = 125C TJ = 25C tc tfi tc 500 3 5 tfi TJ = 125C TJ = 25C IC = 2 A 7 11 9 hFE, FORCED GAIN 3.5 Figure 10. Inductive Storage Time, tsi IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 1 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC/IB = 5 Figure 9. Resistive Switching, toff 3 5 4.5 4 3 IC/IB = 10 0.5 TJ = 125C TJ = 25C 5 IC/IB = 5 2 2 2.5 3 3.5 4 1.5 IC, COLLECTOR CURRENT (AMPS) Figure 8. Resistive Switching, ton t, TIME (ns) t, TIME (s) 6 1 0 15 13 0 Figure 11. Inductive Storage Time, tsi (hFE) 1 2 IC, COLLECTOR CURRENT (AMPS) Figure 12. Inductive Switching, tc and tfi @ IC/IB = 5 http://onsemi.com 5 3 MJE18204 MJF18204 TYPICAL STATIC CHARACTERISTICS 1000 900 t, TIME (ns) 800 680 TJ = 125C TJ = 25C IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H tc 700 600 500 400 300 1 2 3 IC, COLLECTOR CURRENT (AMPS) 0 280 80 4 3 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A 800 5 6 7 8 9 10 11 hFE, FORCED GAIN 15 BVCER (VOLTS) @ 10 mA 1100 1000 900 800 BVCER(sus) @ 200 mA 700 12 13 600 15 14 10 100 RBE () 1000 Figure 16. BVCER = f (RBE) Figure 15. Inductive Crossover Time 6 IC, COLLECTOR CURRENT (AMPS) 100 1 s 10 5 ms 1 ms 10 s 1 MJE18204-DC 0.1 EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 13 TJ = 25C 1200 IC = 1 A 400 4 11 9 hFE, FORCED GAIN 1300 600 3 7 1400 TJ = 125C TJ = 25C 1000 5 Figure 14. Inductive Fall Time BVCER (VOLTS) t c , CROSSOVER TIME (ns) 1200 MJF18204-DC 0.01 IC = 2 A IC = 1 A Figure 13. Inductive Switching, tc and tfi @ IC/IB = 10 200 TJ = 125C TJ = 25C tfi 200 100 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H 480 t fi , FALL TIME (ns) 1100 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 4 3 2 -5 V 1 0 1000 TC 125C GAIN 5 LC = 4 mH 5 -1.5 V 0V 400 Figure 17. Forward Bias Safe Operating Area 800 600 500 700 900 1000 1100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 18. Reverse Bias Switching Safe Operating Area http://onsemi.com 6 1200 MJE18204 MJF18204 TYPICAL STATIC CHARACTERISTICS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 19 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figures 21 and 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse biased. The safe level is specified as a reverse- biased safe operating area (Figure 17). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. POWER DERATING FACTOR 1.0 SECOND BREAKDOWN DERATING 0.8 0.6 0.4 THERMAL DERATING 0.2 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 160 Figure 19. Forward Bias Power Derating TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES) 10 VCE 9 dyn 1 s IC 90% IC 8 dyn 3 s tfi tsi 7 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 s 2 IB 90% IB1 1 2 1 3 s 0 TIME 0 3 4 5 6 7 TIME Figure 20. Dynamic Saturation Voltage Measurements Figure 21. Inductive Switching Measurements http://onsemi.com 7 8 MJE18204 MJF18204 TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES) Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 100 F MTP8P10 100 3W 150 3W MTP8P10 MPF930 MUR105 MPF930 +10 V RB1 Iout A 50 RB2 MJE210 COMMON MTP12N10 150 3W 500 F 1 F -Voff IC PEAK VCE PEAK VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 http://onsemi.com 8 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 MJE18204 MJF18204 TYPICAL THERMAL RESPONSE (IB1 = IB2 FOR ALL CURVES) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 10 RJC(t) = r(t) RJC RJC = 1.65C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 t, TIME (ms) Figure 22. Typical Thermal Response (ZJC(t)) for MJE18204 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 D = 0.5 0.2 0.1 P(pk) 0.1 t1 0.05 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 RJC(t) = r(t) RJC RJC = 3.55C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) SINGLE PULSE 0.1 1 10 100 1000 t, TIME (ms) Figure 23. Typical Thermal Response (ZJC(t)) for MJF18204 http://onsemi.com 9 10000 100000 MJE18204 MJF18204 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS HEATSINK 0.107 MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107 MIN 0.110 MIN Figure 24. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 25. Clip Mounting Position for Isolation Test Number 2 Figure 26. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 27a. Screw-Mounted Figure 27b. Clip-Mounted Figure 27. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 10 MJE18204 MJF18204 PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N http://onsemi.com 11 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MJE18204 MJF18204 PACKAGE DIMENSIONS CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D -T- -B- F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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