CRS04 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CRS04 Switching Mode Power Supply Applications Portable Equipment Battery Applications * Unit: mm Forward voltage: VFM = 0.49 V (max) * Average forward current: IF (AV) = 1.0 A * Repetitive peak reverse voltage: VRRM = 40 V * Suitable for compact assembly due to small surface-mount package "S-FLATTM" (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 40 V Average forward current IF (AV) Peak one cycle surge forward current (non-repetitive) 1.0 (Note 1) A IFSM 20 (50 Hz) A Junction temperature Tj -40~150 C Storage temperature Tstg -40~150 C Note 1: Ta = 31C Device mounted on a glass-epoxy board (board size: 50 mm x 50 mm, land size: 6 mm x 6 mm) JEDEC JEITA TOSHIBA 3-2A1A Note 2: Using continuously under heavy loads (e.g. the application of Weight: 0.013 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance (junction to ambient) Thermal resistance (junction to lead) Symbol Test Condition Min Typ. Max VFM (1) IFM = 0.1 A 0.395 VFM (2) IFM = 0.7 A 0.475 0.49 VFM (3) IFM = 1.0 A 0.51 IRRM (1) VRRM = 5 V 0.6 IRRM (2) VRRM = 40 V 100 VR = 10 V, f = 1.0 MHz 47 Device mounted on a ceramic board (soldering land: 2 mm x 2 mm) 70 Device mounted on a glass-epoxy board (soldering land: 6 mm x 6 mm) 140 20 Cj Rth (j-a) Rth (j-) Unit V A pF C/W C/W Start of commercial production 1999-07 1 2013-11-01 CRS04 Marking Abbreviation Code Part No. S4 CRS04 Standard Soldering Pad Unit: mm 1.2 1.2 2.8 Handling Precaution Schottky barrier diodes have reverse current characteristics compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a device at low temperature. IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating of IF(AV) and Tj be below 120C. When using this device, take the margin into consideration by using an allowable Tamax-IF(AV) curve. IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used at a Tj of below 120C. Thermal resistance between junction and ambient fluctuates depending on the device's mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2013-11-01 CRS04 iF - vF PF (AV) - IF (AV) 10 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 0.8 Tj = 150C 1 125C 75C 0.1 25C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous forward voltage VF 0.6 Rectangular waveform 0.2 0 360 0.1 Conduction angle 0.2 0.4 0.6 0.8 Maximum allowable lead ltemperature Ta max (C) 140 120 100 = 60 120 180 DC 60 0 360 IF (AV) 20 Conduction angle VR = 15 V 0 0.0 0.2 0.4 0.6 0.8 1.0 Average forward current 1.2 IF (AV) 1.4 1.2 IF (AV) 1.4 1.6 (A) Ta max - IF (AV) Glass-epoxy substrate (substrate size: 50 mm x 50 mm, soldering land: 6 mm x 6 mm) 160 Rectangular waveform 1.0 Average forward current Ceramic substrate (substrate size: 50 mm x 50 mm) Maximum allowable ltemperature Ta max (C) = 60 0.3 (V) 160 40 120 0.4 Ta max - IF (AV) 80 180 0.5 0 0.0 1.4 DC 0.7 140 (A) IF (AV) 0 360 120 VR = 20 V Conduction angle 100 80 60 40 20 0 0.0 1.6 Rectangular waveform = 60 0.2 0.4 120 0.6 0.8 Average forward current 180 1.0 1.2 IF (AV) DC 1.4 1.6 (A) rth (j-a) - t Transient thermal impedance rth (j-a) (C/W) 1000 100 10 1 Device mounted on a ceramic board: Soldering land: 2 mm x 2 mm Device mounted on a glass-epoxy board: Soldering land: 6 mm x 6 mm 0.1 1 10 100 1000 time t (ms) 10000 100000 3 2013-11-01 CRS04 Surge forward current Cj - VR (non-repetitive) Ta = 25C 28 300 (pF) f = 50 Hz 24 20 16 12 8 100 50 30 f = 1 MHz 4 Ta = 25C 10 1 0 1 10 3 IR - Tj (typ.) Average reverse power dissipation PR (AV) (W) Pulse test Reverse current IR (mA) 10 30 V 40 V 0.1 20 V 10 V VR = 5 V 0.001 20 40 60 80 30 100 Junction temperature Tj 120 140 VR 50 100 (V) PR (AV) - VR 0.6 0.01 10 Reverse voltage 100 1 5 100 Number of cycles 0.0001 0 (typ.) 500 Junction capacitance Cj Peak surge forward current IFSM (A) 32 0.5 0.4 (C) DC VR 300 Conduction angle Tj = 150C 240 0.3 180 0.2 120 60 0.1 0 0 160 10 20 Reverse voltage 4 (typ.) Rectangular waveform 0 360 30 VR 40 (V) 2013-11-01 CRS04 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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