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TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CRS04
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
• Forward voltage: VFM = 0.49 V (max)
• Average forward current: IF (AV) = 1.0 A
• Repetitive peak reverse voltage: VRRM = 40 V
• Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 40 V
Average forward current IF (AV) 1.0 (Note 1) A
Peak one cycle surge forward current
(non-repetitive) IFSM 20 (50 Hz) A
Junction temperature Tj −40~150 °C
Storage temperature Tstg −40~150 °C
Note 1: Ta = 31°C
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm, land size: 6 mm × 6 mm)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM (1) I
FM = 0.1 A ⎯ 0.395 ⎯
VFM (2) I
FM = 0.7 A ⎯ 0.475 0.49
Peak forward voltage
VFM (3) I
FM = 1.0 A ⎯ 0.51 ⎯
V
IRRM (1) V
RRM = 5 V ⎯ 0.6 ⎯
Repetitive peak reverse current
IRRM (2) V
RRM = 40 V ⎯ ⎯ 100
μA
Junction capacitance Cj V
R = 10 V, f = 1.0 MHz ⎯ 47 ⎯ pF
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm) ⎯ ⎯ 70
Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy
board
(soldering land: 6 mm × 6 mm)
⎯ ⎯ 140
°C/W
Thermal resistance (junction to lead) Rth (j-ℓ) ⎯ ⎯ ⎯ 20 °C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
Start of commercial production
1999-07
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Marking
Abbreviation Code Part No.
S4 CRS04
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
VRRM: Use this rating with reference to the above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account designing a device at low temperature.
IF(AV): We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of IF(AV) and Tj be below 120°C. When using this device, take the margin into consideration by
using an allowable Tamax-IF(AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a Tj of below 120°C.
Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition. When
using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value.
Please refer to the Rectifiers databook for further information.
2.8
1.2
1.2
Unit: mm
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Transient thermal impedance
rth (j-a) (°C/W)
Maximum allowable lead ltemperature
Ta max (°C)
Instantaneous forward voltage VF (V)
iF – vF
Instantaneous forward current iF (A)
Average forward current IF (AV) (A)
PF (AV) – IF (AV)
Average forward power dissipation
PF (AV) (W)
Average forward current IF (AV) (A)
Ta m a x – I F (AV)
Ceramic substrate (substrate size: 50 mm × 50 mm)
Maximum allowable ltemperature
Ta max (°C)
Average forward current IF (AV) (A)
Ta m a x – I F (AV)
Glass-epoxy substrate (substrate size:
50 mm × 50 mm, soldering land: 6 mm × 6 mm)
time t (ms)
rth (j-a) – t
0 0.2
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.4 1.2
75°C
25°C
125°C
Tj = 150°C
0.0
160
0.2 0.6 0.8 1.0 1.4 1.60.4 1.2
0
40
20
60
120
100
80
α = 60° 120° DC
360° 0°
Rectangular waveform
α
VR = 20 V
IF
(
AV
)
Conduction angle α
180°
140
②
①
① Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm × 6 mm
0.1
1
100
1000
1 10 100 1000001000 10000
10
180° 120°
0.0
0
40
160
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
α = 60°
DC
360° 0° α
VR = 15 V
IF
(
AV
)
Conduction
an
g
le α
140
Rectangular
waveform
0.0 0.2 0.6 0.8 1.0 1.4 1.60.4 1.2 0.0 0.2 0.6 0.8 1.0 1.4 1.60.4 1.2
0.8
0
0.4
0
0.2
0.1
0.3
0.5
360° 0°
Rectangular
waveform
α
Conduction angle α
α = 60°
120°
180°
DC
0.6
0.7
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Average reverse power dissipation
PR (AV) (W)
Number of cycles
Surge forward current
(non-repetitive)
Peak surge forward current IFSM (A)
Reverse voltage VR (V)
Cj – VR (typ.)
Junction ca
p
acitance C
j
(
p
F
)
Junction temperature Tj (°C)
I
R – Tj (typ.)
Reverse current IR (mA)
Reverse voltage VR (V)
PR (AV) – VR (typ.)
1 100 10
0
8
16
32
20
24
4
12
28 Ta = 25°C
f = 50 Hz
f = 1 MHz
Ta = 25°C
1
100
300
10 100
10
500
30
50
3 30 5 50
0 20 120 80 40 60 100
100
1
0.0001
0.01
10
140
0.1
160
0.001
Pulse test
VR = 5 V
20 V
10 V
40 V
30 V
0.3
0
0.1
0.2
0.4
0.6
0.5
0 10 20 40 30
60°
120°
180°
240°
300°
DC
360°0°
Rectangula
r
waveform
Conduction angle α
Tj = 150°C
VR
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