NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 50 Volt VCEO
* Gain of 15k at IC = 0.5 Amp
*P
tot=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL 2N6724 2N6725 UNIT
Collector-Base Voltage VCBO 50 60 V
Collector-Emitter Voltage VCEO 40 50 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Current ICM 2A
Continuous Collector Current IC1A
Power Dissipation at Tamb
= 25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL 2N6724 2N6725 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 50 60 V IC=1µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 40 50 V IC=1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10 10 V IE=10µA, IC=0
Collector Cut-Off
Current
ICBO 1.0
1.0 µA
µA
VCB
=30V, IE=0
VCB
=40V, IE=0
Emitter Cut-Off
Current
IEBO 0.1 0.1 µAVEB
=8V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) 1.0
1.5
1.0
1.5
V
V
IC=200mA, IB=2mA*
IC=1A, IB=2mA*
Base-Emitter
Saturation Voltage
VBE(sat) 2.0 2.0 V IC=1A, IB=2mA*
Base-Emitter
Turn-On Voltage
VBE(on) 2.0 2.0 V IC=1A, VCE
=5V*
Static Forward
Current Transfer
Ratio
hFE 25K
15K
4K 40K
25K
15K
4K 40K
IC=200mA, VCE
=5V*
IC=500mA, VCE
=5V*
IC=1A, VCE
=5V*
Collector Base
Capacitance
CCB 10 10 pF VCB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
E-Line
TO92 Compatible
2N6724
2N6725
3-7
C
B
E
