SILICON MOS FET POWER AMPLIFIER, 290-330MHz, 2W, FM PORTABLE RADIO MITSUBISHI RF POWER MODULE M68710EL OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 3040.2 26.640.2 21.240.2 2-R15+0-1 L PIN: Pin: RF INPUT (2)VeaG : GATE BIAS SUPPLY (VoD : DRAIN BIAS SUPPLY (4)Po : RF GUTPUT (S)GND: FIN i, 5 o 6 9 | ity LI LI 3 | loaf ow z 3; 3 W a a H46 ABSOLUTE MAXIMUM RATINGS (To=25C unless otherwise noted) Symbol Parameter Conditions Ratings Unit Vbb Supply voltage Vaes3 5V, Z7G=ZL=500 9 Vv Vac Gate bias voltage 4 Vv Pin Input power f=290-330MHz, 7G=Z1=500 30 mW Po Output power f=290-330MHz, Vop<9V, ZG=2ZL=500 3 Ww Te (oP) Operation case temperature f=290-330MHz, Vop<9V, 7=7L=500 -30 to 4110 ae Tsig Storage temperature -40 to +110 6G Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1c=25C, Za=Z1=500 unless otherwise noted) Limits Symbol P t Test conditi Unit ymbo| arameter est conditions Min Max n f Frequency range 290 330 MHz Po Output power 2 Ww qr Total efficiency Vop=6V, 40 % ; Vee=3.5V, 2fo 2nd. harmonic Ping20mW -20 dBc pin Input VSWR 4 - a ZG=500, Vop=4-9V, a ae Stability Load VSWRe4-:1 No parasitic oscillation Vop=9V, Pin=20mW, No degradation or Load VSWR tolerance Po=3W (Vee adjust), Z1=20:1 destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97