N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 200 Volt VDS
*R
DS(on)= 10Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuo us Drain Cur rent at Tamb=25°C ID180 mA
Pulsed Drain Current IDM 2A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 200 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1 3 V ID=1mA, V DS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=200V, VGS=0
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Cu rrent(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V,ID=250mA
Forward Transconductance
(1)(2) gfs 100 mS VDS=25V,ID=250mA
Input Capacitance (2) Ciss 85 pF
Common So urce Output
Capacitance (2) Coss 20 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 7pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD
≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 20 ns
Fall Time (2)(3) tf12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
3
E-Line
TO92 Compatible
ZVN2120A
3-368
D
G
S
TYPICAL CHA R ACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
246810
01020304050
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Tj-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=250mA
VGS=10V
ID=1mA
VGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
VGS=
0
0.8
0.4
1.0
1.4
1.2
VDS-Drain Source Voltage (Volts)
Volta ge S a turation Chara c te ris tics
VGS-Gate Source Voltage (Volts)
0
20
12
4
8
16
0246810
ID=
1.0A
0.5A
0.1A
8V
7V
VGS=10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(On)
-On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
012345678910
VDS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
ID=
1.0A
0.5A
0.1A
1
10
100
3V
ZVN2120A
3-369
Obsolete. Alternative is ZVN0124A.
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 200 Volt VDS
*R
DS(on)= 10Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS 200 V
Continuo us Drain Cur rent at Tamb=25°C ID180 mA
Pulsed Drain Current IDM 2A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb=25°C Ptot 700 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BVDSS 200 V ID=1mA, VGS=0V
Gate-Source Threshold
Voltage VGS(th) 1 3 V ID=1mA, V DS= VGS
Gate-Body Leakage IGSS 20 nA VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current IDSS 10
100 µA
µAVDS=200V, VGS=0
VDS=160V, VGS=0V,
T=125°C(2)
On-State Drain Cu rrent(1) ID(on) 500 mA VDS=25V, VGS=10V
Static Drain-Source On-State
Resistance (1) RDS(on) 10 ΩVGS=10V,ID=250mA
Forward Transconductance
(1)(2) gfs 100 mS VDS=25V,ID=250mA
Input Capacitance (2) Ciss 85 pF
Common So urce Output
Capacitance (2) Coss 20 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2) Crss 7pF
Turn-On Delay Time (2)(3) td(on) 8ns
VDD
≈25V, ID=250mA
Rise Time (2)(3) tr8ns
Turn-Off Delay Time (2)(3) td(off) 20 ns
Fall Time (2)(3) tf12 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test. (
3
E-Line
TO92 Compatible
ZVN2120A
3-368
D
G
S
TYPICAL CHA R ACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
246810
01020304050
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Tj-Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=250mA
VGS=10V
ID=1mA
VGS=VDS
180
0
0.8
0.4
1.2
2.0
1.6
5V
4V
6V
3V
5V
4V
8V
6V
7V
VGS=
0
0.8
0.4
1.0
1.4
1.2
VDS-Drain Source Voltage (Volts)
Volta ge S a turation Chara c te ris tics
VGS-Gate Source Voltage (Volts)
0
20
12
4
8
16
0246810
ID=
1.0A
0.5A
0.1A
8V
7V
VGS=10V
2V
10V
2V
0.6
0.2
0
Transfer Characteristics
I
D(On)
-On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
012345678910
VDS=
25V
0.8
0
1.6
1.2
0.6
1.4
1.0
0.4
0.2
10V
On-resistance vs gate-source voltage
VGS-Gate Source Voltage (Volts)
RDS(ON) -Drain Source Resistance (Ω)
1234567891020
ID=
1.0A
0.5A
0.1A
1
10
100
3V
ZVN2120A
3-369
TYPICAL CHA R ACTERISTICS
T ransconductance v drain current
ID(on)- Drain Current (Amps)
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
Q-Charge (nC)
Transconductan ce v ga te -source voltage
VGS-Gate Source Voltage (Volts)
V
GS
-Gate Source Voltage (Volts)
Gate charge v g ate-source voltage
0
10
8
6
2
0
4
12
14
16 VDS=
50V
ID=700mA
100V
150V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
00.2
0.4 0.6 0.8 1.0
VDS=25V
0
100
200
400
300
500
0246810
VDS=25V
0
300
200
100
400
500
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Coss
Ciss
Crss
010 20 30 40 50
60
40
20
80
100
1.2 1.4 1.6 1.8 2.0
ZVN2120A
3-370
