W55FXX
SERIAL FLASH EEPROM SERIES
Publication Release Date: August 1996
- 1 - Revision A2
GENERAL DESCRIPTION
The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell
of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeechTM series.
The single voltage supply eliminates the need for an extra pump circuit during programming and
erasing.
FEATURES
•Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeechTM series
•512K/1M/2M memory sizes available
•Directly cascadable for longer duration
•Fast frame-write operation
−Frame (32 bits) program cycle time: 400 µS (typ.)
•Fast whole-chip-erase duration: 50 mS (max.)
•Read data access time: 500 nS (max.)
•Program/erase cycles: 10,000 (typ.)
•Data retention: 10 years (typ.)
•Low power consumption:
−Operating: 5 mA (typ.)
−Standby: 2 µA (typ.)
PIN CONFIGURATION
MODE
EOP
CTRL
V
ADDR DATA
CLK
V
18
2
3
45
6
7
SS
DD
W55FXX
- 2 -
PIN DESCRIPTION
NO. PIN NAME I/O DESCRIPTION
1 EOP O End of process signal output
2 CTRL I Enable signal for program and erase operations when MODE = 0
Input clock for mode counter when MODE = 1
3VSS I Ground
4 ADDR I Input clock for start adress shift-in
5 DATA I/O Bidirectional data line
6 CLK I Input clock for data write-in and read-out
7VDD I Positive voltage supply
8 MODE I Mode select control pin
BLOCK DIAGRAM
ADDR
DATA
CLK shift register
/address counter
Decoder
Write-in Buffer
Control
Circuit
CTRL
MODE
EOP
page-code cells
/page-code flag
/comparator
Output
Buffer
Core
Array
POR
Circuit
Pump
Circuit
W55FXX
Publication Release Date: August 1996
- 3 - Revision A2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL CONDITION RATED VALUE UNIT
Operating Temp. TOPR - 0 to +70 °C
Storage Temp. TSTG - -65 to +150 °C
Power Supply VDD−VSS - -0.3 to +7.0 V
Input DC Voltage VDC All pins -0.5 to VDD +1.0 V
Transient Voltage (< 20 nS) VTRAN All pins -1.0 to VDD +1.0 V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
DC CHARACTERISTICS
(VDD = 4.5V, VSS = 0V, TA = 25° C)
PARAMETER SYMBOL CONDITIONS LIMITS UNIT
MIN. TYP. MAX.
Operating voltage VDD - 2.4
(Note)
4.5 5.5 V
Standby current ISB All inputs = GND
DATA & EOP open
-24
µA
Operating current IOP In read mode
DATA & EOP open
FOSC = 1 MHz
-510mA
Input voltage High VIH All input pins 2.0 VDD V
Low VIL -0.3 - 0.8 V
Output current Sink IOL VOL = 0.5V 2.5 5 - mA
Drive IOH VOH = 4.0V -2.5 -5 - mA
Input leakage current
of CTRL, MODE
ILI1 VIN = 4.5V - - 4.5 µA
Input leakage current
of DATA
ILI2 VIN = 0V - - -4.5 µA
Note: For been working with W52900, the minimum operating voltage couldn't be less than 3.6 volt.
W55FXX
- 4 -
AC CHARACTERISTICS
(VDD = 4.5V, VSS = 0V, TA = 25° C)
PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT
MODE pulse width TMP -1--
µS
CTRL pulse width TWP Page coding mode 400 - 700 µS
Clock frequency of ADDR FADDR - - - 1 MHz
Clock frequency of CLK FCLK - - - 1 MHz
Clock frequency of CTRL FCTRL - - - 1 MHz
Interval between ADDR end
& CLK begin
TIRead/Write mode 1 - - µS
Interval between CLK &
CTRL
TGCC Write mode 1 - - µS
Interval between ADDR &
CTRL
TGCA Page coding mode 1 - - µS
Interval between addressing
end & block-erase begin
TAE Block erase mode 1 - - µS
Interval between MODE
rising edge & CTRL clock
begin
TMB Mode selection 500 - - nS
Interval between CTRL clock
end & MODE falling edge
TME Mode selection 500 - - nS
Interval between MODE
falling edge & another pin
active
TGM -1--
µS
Data access time TRA Read mode - - 500 nS
Data set up time TWS Write mode 250 - - nS
TAS - 250 - - nS
Data hold time TRH Read mode 0 - - nS
TWH Write mode 10 - - nS
TAH -10--nS
Programming duration TPR Write mode 400 - - µS
Whole-chip-erase time TWE Whole-chip-erase
mode
45 - 50 mS
Block-erase time TBE Block-erase mode 40 - 45 mS
W55FXX
Publication Release Date: August 1996
- 5 - Revision A2
TIMING WAVEFORM
T
T
1/F
CLK
DATA
Write Cycle
T
T
1/F
CLK
DATA
Read Cycle
T
T
1/F
ADDR
DATA
Address Shift-in Cycle
T
T
MODE
CTRL
Mode Select Duration
1/F
TT
1/F
CTRL
DATA
Page-code Cell Read Out Cycle
Note: The duty cycle of any clock is 50%.
CLK
RH
RA WH
WS
ME
CTRL
MB
CLK
ADDR
AS AH
CTRL
RH
RA
W55FXX
- 6 -
APPLICATION CIRCUITS (for reference only)
ADDR
DATA
CLK
CTRL
EOP
MODE
W55FXX
EOP
ADDR
DATA
CLK
CTRL
MODE
W51300
For Voice Recorder Applications
ADDR
DATA
CLK
CTRL
EOP
MODE
W55FXX
EOP
ADDR
DATA
CLK
CTRL
MODE
W51300
ADDR
DATA
CLK
CTRL
EOP
MODE
W55FXX
ADDR
DATA
CLK
CTRL
EOP
MODE
W55FXX
For PowerSpeech Applications
ADDR
DATA
CLK
CTRL
EOP
MODE
W55FXX
ADDR
DATA
CLK
W5280/
W52900
ORDERING INFORMATION
PART NO. MEMORY SIZE
W55F05 512K BITS
W55F10 1M BITS
W55F20 2M BITS
W55FXX
Publication Release Date: August 1996
- 7 - Revision A2
Headquarters
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5792697
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-7197006
Taipei Office
11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: 886-2-7190505
FAX: 886-2-7197502
Winbond Electronics (H.K.) Ltd.
Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: 852-27516023
FAX: 852-27552064
Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.
2730 Orchard Parkway, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-9436668
Note: All data and specifications are subject to change without notice.
