Single N-channel Trench MOSFET 30V, 36.1A, 10.7m Features General Description The MDV1595S uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1595S is suitable for DC/DC converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 36.1A @VGS = 10V RDS(ON) < 10.7m @VGS = 10V < 13.0m @VGS = 4.5V 100% UIL Tested 100% Rg Tested SBD Built In D G PDFN33 S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V 12 V VGSS TC=25oC 36.1 TC=100oC Continuous Drain Current (1) ID o TA=25 C TA=70oC IDM o TC=25 C 13.4 80 A 24.5 TC=100oC 9.8 PD o TA=25 C TA=70oC Single Pulse Avalanche Energy A (3) 10.8(3) Pulsed Drain Current Power Dissipation 22.8 W 3.4(3) 2.2(3) (2) EAS 48 TJ, Tstg -55~150 Characteristics Symbol Rating (1) RJA 36 RJC 5.1 Junction and Storage Temperature Range mJ o C Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Feb. 2012 Version 1.1 1 Unit o C/W MagnaChip Semiconductor Ltd. MDV1595S - Single N-Channel Trench MOSFET 30V MDV1595S Part Number Temp. Range Package Packing RoHS Status MDV1595SURH -55~150oC PDFN33 Tape & Reel Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.0 1.5 2.0 - - 0.5 - - 100 Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance IDSS IGSS VDS = 30V, VGS = 0V o TJ=125 C VGS = 12V, VDS = 0V - - 100 VGS = 10V, ID = 13A - 8.2 10.7 - 14.9 13.5 VGS = 4.5V, ID = 11A - 10.0 13.0 VDS = 5V, ID = 13A - 27.3 - 15.6 22.3 29.0 6.9 9.9 12.9 - 3.0 - - 2.7 - - 1426 1853 - 75.4 98 TJ=125oC RDS(ON) gfs V mA nA m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15.0V, ID = 13A, VGS = 10V Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss - 198 257 Turn-On Delay Time td(on) - 7.8 - tr - 3.1 - - 33.5 - Rise Time Turn-Off Delay Time td(off) VDS = 15.0V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 15.0V, ID = 13A, RG = 3.0 Fall Time tf Gate Resistance Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr nC pF ns - 4.3 - 0.5 1.0 2.0 - 0.45 0.7 V - 24.2 36.3 ns - 16.4 24.6 nC Drain-Source Body Diode Characteristics IF = 13A, dl/dt = 100A/s Note : 1. Surface mounted FR4 board with 2oz. Copper. Continuous current at TC=25 is silicon limited. 2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V. 3. T < 10sec Feb. 2012 Version 1.1 2 MagnaChip Semiconductor Ltd. MDV1595S - Single N-Channel Trench MOSFET 30V Ordering Information 12 Drain-Source On-Resistance [m] 3.0V ID, Drain Current [A] 40 3.5V 4.0V 30 VGS = 10V 20 2.5V 10 11 10 VGS = 4.5V 9 8 VGS = 10V 7 0 0 1 2 3 4 6 5 5 10 15 20 VDS, Drain-Source Voltage [V] 25 30 35 40 30 1.8 Notes : Notes : ID = 13A RDS(ON) [m ], Drain-Source On-Resistance 1. VGS = 10 V 2. ID = 13 A 1.6 1.4 1.2 1.0 0.8 25 20 15 10 TJ = 25 5 0.6 -50 -25 0 25 50 75 100 125 0 150 2 3 o Fig.3 On-Resistance Variation with Temperature 5 6 7 8 9 10 Fig.4 On-Resistance Variation with Gate to Source Voltage 100 30 Notes : Notes : VGS = 0V VDS = 5V IDR, Reverse Drain Current [A] 27 4 VGS, Gate to Source Volatge [V] TJ, Junction Temperature [ C] 24 ID, Drain Current [A] 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics RDS(ON), (Normalized) Drain-Source On-Resistance 45 ID, Drain Current [A] 21 18 15 TJ=25 12 9 6 80 60 TJ=25 40 20 3 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Feb. 2012 Version 1.1 0.5 1.0 1.5 VSD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDV1595S - Single N-Channel Trench MOSFET 30V 50 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Note : ID = 13A VDS = 15V 1600 Capacitance [F] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 1200 800 Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 400 2 Crss 0 0 0 5 10 15 20 25 0 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 3 10 2 20 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 50 Operation in This Area is Limited by R DS(on) 40 10 1 10 0 10 s 100 ms 1s DC 100 s 10 ID, Drain Current [A] ID, Drain Current [A] 10 ms 30 20 -1 10 Single Pulse TJ=Max Rated TC=25 10 -2 10 -1 10 0 10 1 10 0 25 2 VDS, Drain-Source Voltage [V] 50 75 100 TC, Case Temperature [ 125 150 ] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 0.2 0 10 0.1 0.05 0.02 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC(t) + TC -1 10 0.01 Z JC , Thermal Response D=0.5 single pulse -2 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Feb. 2012 Version 1.1 4 MagnaChip Semiconductor Ltd. MDV1595S - Single N-Channel Trench MOSFET 30V 2000 10 MDV1595S - Single N-Channel Trench MOSFET 30V Package Dimension PDFN33 (3.3x3.3mm) Dimensions are in millimeters, unless otherwise specified (Unit: mm) Feb. 2012 Version 1.1 5 MagnaChip Semiconductor Ltd. MDV1595S - Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Feb. 2012 Version 1.1 6 MagnaChip Semiconductor Ltd.