AP01L60AT RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS(ON) 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device. The TO-92 package is widely used for commercial-industrial applications. G TO-92 D S Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 V ID@TA=25 Continuous Drain Current, VGS @ 10V 160 mA ID@TA=100 Continuous Drain Current, VGS @ 10V 100 mA 1 IDM Pulsed Drain Current 300 mA PD@TA=25 Total Power Dissipation 0.83 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 150 /W 201023073-1/4 AP01L60AT Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 600 - - V - 0.8 - V/ VGS=10V, ID=0.5A - - 12 VDS=VGS, ID=250uA 2 - 4 V VDS=10V, ID=0.5A - 0.8 - S Drain-Source Leakage Current (Tj=25 C) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS= 30V - - 100 nA ID=0.1A - 6.0 10 nC BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 VGS=0V, ID=1mA 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 1.0 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.5 - nC VDD=300V - 6.6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 5.0 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 11.7 - ns tf Fall Time RD=300 - 9.2 - ns Ciss Input Capacitance VGS=0V - 170 270 pF Coss Output Capacitance VDS=25V - 30.7 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF Min. Typ. VD=VG=0V , VS=1.2V - - 160 mA IS=160mA, VGS=0V - - 1.2 V Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) 2 Forward On Voltage Test Conditions Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2/4 AP01L60AT 1.5 1 10V 6.0V 5.5V 5.0V ID , Drain Current (A) T A =25 C 0.75 1 V GS =4.5V 0.5 10V 5.0V T A =150 o C ID , Drain Current (A) o 4.5V 0.5 V GS =4.0V 0.25 0 0 0 12 24 36 0 V DS , Drain-to-Source Voltage (V) 10 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 2.8 I D =0.5A V GS =10V 2.4 2 Normalized RDS(ON) Normalized BVDSS (V) 1.1 1 1.6 1.2 0.8 0.9 0.4 0 0.8 -50 0 50 100 -50 150 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction 100 150 v.s. Junction Temperature 4 1 3 VGS(th) (V) 10 IS (A) 50 Fig 4. Normalized On-Resistance Temperature T j = 150 o C 0 T j , Junction Temperature ( o C ) o T j = 25 C 2 0.1 1 0.01 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP01L60AT f=1.0MHz 1000 12 Ciss I D =0.1A V DS =480V 100 C (pF) VGS , Gate to Source Voltage (V) 16 8 Coss 10 4 Crss 0 1 0 2 4 6 8 1 10 19 28 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 0.2 0.6 PD (W) ID , Drain Current (A) 0.8 0.15 0.1 0.4 0.05 0.2 0 0 25 50 75 100 125 T A , Case Temperature ( o 150 0 50 Fig 9. Maximum Drain Current v.s. 100 T A , Case Temperature ( C) 150 o C) Fig 10. Typical Power Dissipation Case Temperature VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-92 E A Millimeters SYMBOLS MIN NOM MAX A 4.32 4.83 5.34 D 4.1 4.8 5.3 E 3.1 3.9 4.7 b ---- 0.38 ----- L 12.7 --- ---- e1 ---- 1.27 ---- SEATING PLANE 1.All Dimensions Are in Millimeters. L 2.Dimension Does Not Include Mold Protrusions. D e1 b Part Marking Information & Packing : TO-92 Part Number 01L60AT YWWSSS Package Code Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence