Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low Gate Charge BVDSS 600V
▼ Fast Switching Characteristics RDS(ON) 12Ω
▼ Simple Drive Requirement ID160mA
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TA=25℃Continuous Drain Current, VGS @ 10V mA
ID@TA=100℃Continuous Drain Current, VGS @ 10V mA
IDM Pulsed Drain Current1mA
PD@TA=25℃Total Power Dissipation W
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient 150 ℃/W
Data & specifications subject to change without notice
600
Parameter
201023073-1/4
Storage Temperature Range -55 to 150
RoHS-compliant Product
-55 to 150
300
0.83
100
160
Parameter Rating
AP01L60AT
± 30
G
D
S
TO-92
GDS
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and cost-
effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 600 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=0.5A - - 12 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=0.1A - 6.0 10 nC
Qgs Gate-Source Charge VDS=480V - 1.0 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.5 - nC
td(on) Turn-on Delay Time2VDD=300V - 6.6 - ns
trRise Time ID=1A - 5.0 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11.7 - ns
tfFall Time RD=300Ω- 9.2 - ns
Ciss Input Capacitance VGS=0V - 170 270 pF
Coss Output Capacitance VDS=25V - 30.7 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.2V - - 160 mA
VSD Forward On Voltage2IS=160mA, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP01L60AT
± 30V ±100
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3/4
AP01L60A
T
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=0.5A
VGS =10V
0
0.5
1
1.5
0122436
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC
10V
6.0V
5.5V
5.0V
VGS =4.5V
0
0.25
0.5
0.75
1
0 10203040
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC 10V
5.0V
4.5V
VGS =4.0V
0.01
0.1
1
10
0 0.4 0.8 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCTj = 25 oC
1
2
3
4
-50 0 50 100 150
Tj , Junction Temperature ( o C )
VGS(th) (V)
0.8
0.9
1
1.1
1.2
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s. Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP01L60AT
0
4
8
12
16
02468
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I
D=0.1A
VDS =480V
1
10
100
1000
1 101928
VDS , Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
0
0.2
0.4
0.6
0.8
1
0 50 100 150
TA , Case Temperature ( oC )
PD (W)
0
0.05
0.1
0.15
0.2
25 50 75 100 125 150
TA , Case Temperature ( oC )
ID , Drain Current (A)
Package Outline : TO-92
Millimeters
MIN NOM MAX
A 4.32 4.83 5.34
D 4.1 4.8 5.3
E 3.1 3.9 4.7
b ---- 0.38 -----
L 12.7 --- ----
e1 ---- 1.27 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-92
S
YMBOL
S
ADVANCED POWER ELECTRONICS CORP.
E
Part Numbe
r
01L60AT
YWWSSS
e1
L
A
SEATING
PLANE
b
D
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
