2N3960 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Low power switching transistor * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3960J) * JANTX level (2N3960JX) * JANTXV level (2N3960JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-18 metal can Also available in chip configuration Chip geometry 0003 Reference document: MIL-PRF-19500/399 Benefits * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 12 Collector-Base Voltage VCBO 20 Unit Volts Volts Emitter-Base Voltage VEBO 4.5 Volts Power Dissipation, TA = 25C Derate linearly above 25C PT 400 2.3 Operating Junction Temperature TJ -65 to +200 mW mW/C C TSTG -65 to +200 C Storage Temperature Copyright 2002 Rev. D Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N3960 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Test Conditions Min IC = 10 A V(BR)CEO Typ Max Units Volts 12 ICBO VCB = 20 Volts 10 A ICEX1 ICEX2 ICEX3 VCE = 10Volts, VBE = 0.4Volts VCE = 10Volts, VBE = 2 Volts VCE = 10Volts, VBE = 2 Volts, TA = 150C 1 5 5 A nA A IEBO VEB = 4.5 Volts 10 A On Characteristics Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage VBE1 VBE2 VCEsat1 VCEsat2 Test Conditions IC = 1 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts IC = 30 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55C VCE = 1 Volts, IC = 1 mA VCE = 1 Volts, IC = 30 mA IC = 1 mA, IB = 0.1 mA IC = 30 mA, IB = 3 mA Min 40 60 30 30 Test Conditions f = 100 MHz VCE = 4 Volts, IC = 5 mA, VCE = 4 Volts, IC = 10 mA, VCE = 4 Volts, IC = 30 mA, VCB = 4 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz Min Typ Max Units 300 0.8 1.0 0.2 0.3 Volts Volts Dynamic Characteristics Parameter Symbol Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE|1 |hFE|2 |hFE|3 Open Circuit Output Capacitance COBO Open Circuit Input Capacitance CIBO Copyright 2002 Rev. D Typ Max Units 2.5 pF 2.5 pF 13 14 12 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2