2SA1295 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) 2SA1295 Unit ICBO VCB=-230V -100max A 36.40.3 24.40.2 VEB=-5V -100max A IC=-25mA -230min V VCEO -230 V IEBO VEBO -5 V V(BR)CEO IC -17 A hFE VCE=-4V, IC=-5A 50min IB -5 A VCE(sat) IC=-5A, IB=-0.5A -2.0max V PC 200(Tc=25C) W fT VCE=-12V, IE=2A 35typ MHz Tj 150 C COB VCB=-10V, f=1MHz 500typ pF -55 to +150 C hFE Rank O(50 to 100), Y(70 to 140) 2-o3.20.1 7 9 21.40.3 20.0min Tstg a b 2 3 5.450.1 RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -60 12 -5 -10 5 -500 500 0.35typ 1.50typ 0.30typ 0mA -200 mA -1 00 mA -5 -50mA I B =-20mA 0 0 -1 -2 -3 -15 -2 -1 I C =-10A -5 -5A 0 -4 0 -0.5 Collector-Emitter Voltage V C E (V) -1.0 -1.5 h FE - I C Temperature Characteristics (Typical) (V C E =-4V) 200 200 -0.5 -1 -5 25C 100 50 -30C 10 -0.02 -10 -17 Transient Thermal Resistance DC Cur rent Gain h FE Typ 50 -0.8 -0.1 -0.5 -1 -1.6 f T - I E Characteristics (Typical) -2.4 -3.2 -5 -10 -17 j-a - t Characteristics 2 1 0.5 0.1 1 10 Collector Current I C (A) Collector Current I C (A) 100 1000 2000 Time t(ms) Safe Operating Area (Single Pulse) P c - T a Derating (V C E =-12V) 60 200 -40 D 1 Emitter Current I E (A) 16 10 -0.05 -3 -10 -100 Collector-Emitter Voltage V C E (V) -300 nk 0.1 si 0 0.02 at Without Heatsink Natural Cooling -0.1 he -0.5 120 ite 20 -1 fin p 160 In Ty -5 ith 40 s C W Collect or Cur ren t I C (A) -10 m M aximum Power Dissipa ti on P C (W) 10 Cu t-of f Fr eque ncy f T ( MH Z ) DC Cur rent Gain h F E 125C -0.1 0 Base-Emittor Voltage V B E (V) (V C E =-4V) 10 -0.02 0 -2.0 Base Current I B (A) h FE - I C Characteristics (Typical) 100 -10 p) -30 -10 mA Weight : Approx 18.4g a. Type No. b. Lot No. -17 em Collector Current I C (A) 0 -50 E (V C E =-4V) - 3 eT - A 1.0 125 C ( Cas 25C A Collector Current I C (A) .5 -1 C I C - V BE Temperature Characteristics (Typical) j- a ( C/W) -15 0A Collector-Emitter Saturation Voltage V C E (s a t) (V ) A -3 .0 . -2 V CE ( sat ) - I B Characteristics (Typical) 3.0 +0.3 -0.1 5.450.1 B VCC (V) -17 0.65 +0.2 -0.1 1.05 +0.2 -0.1 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) 6.00.2 2.1 mp) V Conditions e Te -230 External Dimensions MT-200 (Ta=25C) Symbol Cas Unit VCBO Electrical Characteristics (Ta=25C) 2SA1295 C ( Symbol -30 Absolute maximum ratings Application : Audio and General 4.0max LAPT 80 40 5 0 Without Heatsink 0 25 50 75 100 125 Ambient Temperature Ta(C) 150