SAJDINPNIESLYPIVBKIGYIAS(PCTAD) SILICON NPN EPITAXIAL TRANSISTOR (PCT PROCESS O CR mee He o Low Noise Audio Amplifier Applications. RHE CT MBM Bp en: REMHEAEL: Voro = 50V NF = 2aB CR, = 10K), f = 100Hz ) Dep 200 ~ 700 28as@e av 7AVAYFVCKVIV ET. e~ omplementary to 28A493 MAKER MAXIMUM RATINGS ( Ta = 250) (Max. ) } ELMS) >v INDUSTRIAL APPLICATIONS Unit in mm asc 10006 958 MAX. P4.95MAX LOMAX, S3MAg K POTHACroMBInNneTHET. Produced by Perfect Crystal Device Technology. go.45 g CHARACTERISTIC SYMBOL RATING UNIT a | AVIA N-AM RE Voro 55 Vv avgee tive MRE | Von 50 Vv 1.27 La aan RIIRON-AMME | Vago 5 Vv A Ya \arerst J 3 ave shh Ig 100 mA +y x7 ys Rt Ip 100 mA 1 EMITTER 7 7 a im & Po 200 mw 2 COLLECTOR 3 BASE HEBER T; 125 Cc Ree Tstg 55 ~ 125 c JEDEC - EIAJ - TOSHIBA 2-5BiA 533} 4 __asc10000 \\ WMA MH wLecTRICAL CHARACTERISTICS ( Ta = 250) CHARACTERISTIC SYMBOL CONDITION MIN, TYP, MAX,, UNIT . Von = lev IVA7A LOM RE Igpo =o - - a2 HA . Ven = BV TI7sF LOM EH lupo EB - - {| 01 | wa Iq =0 Ke MWK ote) | n Vou = 6V 200 | - | ) FE Ig = 2A 700 sm Vog = Vv . hovevary BRR fp Ig = ma - 80 - | MH Von = OV AVIsHDS # Cop Iz =0 - 6 10 pF f= IM, Yor = & NF (1) | fC = oe - - |} 20 4B a e mR 5 = ~ CE > Iq = Q1mA NF (2) | 2 < joo, | 7 - 2 dB R, = 10K) Note 5; beep (CLO FROLICSMLRARRLEL ChHVET, According to the value of hpg, the 25C1000 () is classified as follows. GLASSIFICATION MIN, MAX, 2801000 ~ ar 200 400 2801000@ - BL 350 700 ,, hve#{h PARAMETERS (TYP. ) C= 8 4% COMMON EMITTER, Vog=6V, Ip=~-1ma, f=270Hz, Ta=25C ) CHARACTERISTIC SYMBOL | C1000@-aR | cic00o@-BL UNIT AWA 4 E-# YR CHHGH)) his "5 15 ko RB BZ CANBK)] nro 62 13 xi1o7 = wt @ B BR CH wMe) hre 280 530 HOT FSR YR (CADSR) hog 64 13 40 5342sc 1000@ Ic - Vor STATIC CHARACTERISTICS (LOW VOLTAGE,LOW CURRENT REGION) ? aly COMMON EMITTER Ta= 25TC aU7 9 Bit To (mA) 0 Oo 10 20 30 VIF Diy 9M BEE Von (V) = 1 2 3 4 5 6 ~ 04 Ae Diy Fe {a COMMON 399+ ey FMB Vow (V) o EMITTER O06 Ke Ta=25T x h PARAMETERS - Vog hpp- Io Zi, F eh a COMMON % EMITTER a Vou= 5V 3 4 Ta=25T s ie q Py a = = = iW 5 79 et OMMON Fe] EMITTER a Im=-imA =270H2 =25C QO1 al 1 10 100 a5 1 3 5 10 30 50 100 av27 9 Mit Io (mA) avIg9- 2s SMM Vor (VY) 535escl0006. \ h PARAMETERS Ip f mm a & a = <a i < Pa a x w a x 8 co yeni T TER 2287 one 1 Ta=25T 20 60 -100 = - 200-500-1000 3000 -5000 Diy S Rit Ip (4A) NF-Vop ~ g Zz Ba 2 x a) z 5000 1 1k as 1 3. 5 10 30 50 AUIS- iy 9 MBE Vor (Vv) 536 MEM NP (dB) MEK NEF GB) NF-Vop Ig=100#4 f=1kHs as 1 3 5 10 w AUP9+- zt y SMM Vom CV) NF-Vop Ig=100HA fF=100Hz 16 b as 1 3 5 10 30 AVUI9+ zi y SMM Vow (V)2sc 1 0006 NF-Rg, Ig NF-Rg, Ig BME Re (xO) 1 10 100 1000 5000 1 10 100 1000 5000 aAU7P MBE To CHA) 2UIF MIE Ig CHA) NF-Rg, Io 250 oN 200 A S oO & 150 x xg x 100 S Fa 50 0 1 10 100 1000 5000 0 25 50 6 100 125 150 3V7 9 Wii I (4A) FBR Ta (CT) 537