
SILICON PLANAR DUAL SWITCHING DIODES
Marking
BAW74 - JD
High-Speed Switching Dual Diodes, Common Anode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION SYMBOL UNIT
Maxium Repetitive Reverse Voltage VRRM V
Average Rectified Forward Current IF(AV) mA
Power Dissipation Ta=25ºC PDmW
Non Repetitive Peak Forward Surge
Current IFSM
Pulse Width=1s A
A
Storage Temperature Range Tstg oC
Operating Junction Temperature TjoC
THERMAL RESISTANCE
Junction to Ambient in free air Rth (j-a) oC/W
ELECTRICAL CHARACTERISTICS (T
=25º C unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN UNIT
Breakdown Voltage VRIR = 100µA50 V
Forward Voltage *VFIF = 100mA V
Reverse Current *IR
R
nA
VR=50V, Ta=150ºC µA
Total Capacitance CTVR=0V, f=1MHz pF
Reverse Recovery Time trr IF=IR=10mA, IRR
RL=100Ωns
*Pulse Test : Pulse Width =300
s, Duty Cycle=2%
2
4
1
2
- 55 to +150
100
VALUE
50
200
MAX
1
100
350
150
357
1 =
2 =
3 =
CATHODE
CATHODE
ANODE
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