Dual N-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM8005K
Features
Applications
Pin Description
Ordering and Marking Information
N-Channel MOSFET
• 80V/4.7A,
RDS(ON) =45mΩ (Typ.) @ VGS = 10V
RDS(ON) =55mΩ (Typ.) @ VGS = 5V
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
G1
S1
D1 D1
G2
S2
D2 D2
SOP-8
S1G1S2G2
D1D1D2D2
APM8005
Handling Code
Temperature Range
Package Code
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM8005 K : APM8005
XXXXX XXXXX - Date Code
Assembly Material
• LED Application System.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw2
APM8005K
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter Rating Unit
V
DSS
Drain-Source Voltage 80
V
GSS
Gate-Source Voltage ±25 V
I
D
* Continuous Drain Current 4.7
I
DM
* Pulsed Drain Current VGS=10V 18
IS* Diode Continuous Forward Current 2.5
ISM** Pulse Source Current 18
A
T
J
Maximum Junction Temperature 150
T
STG
Storage Temperature Range -55 to 150 °C
TA=25°C 2
PD* Maximum Power Dissipation TA=100°C 0.8 W
RθJA* Thermal Resistance-Junction to Ambient 62.5 °C/W
EAS Drain-Source Avalanche Energy, L=0.1mH 16.3 mJ
Note：*Surface Mounted on 1in2 pad area, t ≤ 10sec.
APM8005K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 80 - - V
VDS=64V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current
TJ=85°C
- - 30 µA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1 - 3 V
IGSS Gate Leakage Current VGS=±25V, VDS=0V - - ±100
nA
VGS=10V, IDS=4.7A - 45 57
RDS(ON) a
Drain-Source On-state Resistance VGS=5V, IDS=4.5A - 55 72 mΩ
Diode Characteristics
VSDa Diode Forward Voltage ISD=2.5A, VGS=0V - 0.75
1.1 V
trr Reverse Recovery Time - 36 - ns
Qrr Reverse Recovery Charge ISD=2.5A, dISD/dt=100A/µs
- 30 - nC
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw3
APM8005K
Electrical Characteristics (Cont.) (TA = 25°C Unless Otherwise Noted)
APM8005K
Symbol
Parameter Test Conditions Min.
Typ.
Max.
Unit
Dynamic Characteristics b
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz
- 2.5 - Ω
Ciss Input Capacitance - 1100
-
Coss Output Capacitance - 105
-
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=30V,
Frequency=1.0MHz - 60 - pF
td(ON) Turn-on Delay Time - 9 17
Tr Turn-on Rise Time - 6 12
td(OFF) Turn-off Delay Time - 38 69
Tf Turn-off Fall Time
VDD=40V, RL=40Ω,
IDS=1A, VGEN=10V,
RG=6Ω - 12 23
ns
Gate Charge Characteristics b
Qg Total Gate Charge - 23 32
Qgs Gate-Source Charge - 4 -
Qgd Gate-Drain Charge
VDS=40V, VGS=10V,
IDS=4.7A - 6 -
nC
Note a : Pulse test ; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw4
APM8005K
Typical Operating Characteristics
ID - Drain Current (A)
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
VDS - Drain - Source Voltage (V)
Thermal Transient Impedance
Square Wave Pulse Duration (sec)
Power Dissipation
Ptot - Power (W)
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Normalized Transient Thermal Resistance
020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
020 40 60 80 100 120 140 160
0
1
2
3
4
5
6
TA=25oC,VG=10V
0.01 0.1 110 100 500
0.01
0.1
1
10
50
300µs
Rds(on) Limit
1s
TA=25oC
10ms
100ms
DC
1ms
1E-4 1E-3 0.01 0.1 110 30
1E-3
0.01
0.1
1
2
Mounted on 1in2 pad
RθJA :62.5 oC/W
0.01
0.02
0.05
0.1
0.2
Single Pulse
Duty = 0.5
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw5
APM8005K
RDS(ON) - On - Resistance (mΩ)
Drain-Source On Resistance
ID - Drain Current (A)
Tj - Junction Temperature (°C)
Gate Threshold Voltage
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
VGS - Gate - Source Voltage (V)
Normalized Threshold Voltage
Typical Operating Characteristics (Cont.)
Gate-Source On Resistance
RDS(ON) - On Resistance (mΩ)
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
2
4
6
8
10
12
14
16
18
3V
3.5V
VGS=4,5,6,7,8,9,10V
0246810
30
35
40
45
50
55
60
65
70
75
VGS=5V
VGS=10V
-50 -25 025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 IDS =250µA
Output Characteristics
2 3 4 5 6 7 8 9 10
30
40
50
60
70
80
90
100
IDS=4.7A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw6
APM8005K
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
Normalized On Resistance
Tj - Junction Temperature (°C)
C - Capacitance (pF)
VSD - Source - Drain Voltage (V)
Source-Drain Diode Forward
IS - Source Current (A)
Capacitance Gate Charge
QG - Gate Charge (nC)
VGS - Gate - source Voltage (V)
Typical Operating Characteristics (Cont.)
-50 -25 025 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
RON@Tj=25oC: 45mΩ
VGS = 10V
IDS = 4.7A
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
20
Tj=150oC
Tj=25oC
0 5 10 15 20 25 30 35 40
0
200
400
600
800
1000
1200
1400
Frequency=1MHz
Crss
Coss
Ciss
0 5 10 15 20 25
0
1
2
3
4
5
6
7
8
9
10 VDS=40V
IDS= 4.7A
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw7
APM8005K
Avalanche Test Circuit and Waveforms
DUT
0.01Ω
tp
VDD
VDS L
IL
RG
EAS
VDD
tAV
IAS
VDS
tpVDSX(SUS)
Switching Time Test Circuit and Waveforms
VDD
RD
DUT
VGS
VDS
RG
tp
td(on) trtd(off) tf
VGS
VDS
90%
10%
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw8
APM8005K
Package Information
SOP-8
D
e
E
E1
SEE VIEW A
cb
h X 45
°
A
A1A2
L
VIEW A
0.25
SEATING PLANE
GAUGE PLANE
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
S
Y
M
B
O
LMIN. MAX.
1.75
0.10
0.17 0.25
0.25
A
A1
c
D
E
E1
e
h
L
MILLIMETERS
b0.31 0.51
SOP-8
0.25 0.50
0.40 1.27
MIN. MAX.
INCHES
0.069
0.004
0.012 0.020
0.007 0.010
0.010 0.020
0.016 0.050
0
0.010
1.27 BSC 0.050 BSC
A2 1.25 0.049
0
°
8
°
0
°
8
°
3.80
5.80
4.80
4.00
6.20
5.00 0.189 0.197
0.228 0.244
0.150 0.157
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw9
APM8005K
Application
A H T1 C d D W E1 F
330.0±
2.00 50 MIN.
12.4+2.00
-0.00
13.0+0.50
-0.20
1.5 MIN.
20.2 MIN.
12.0±0.30
1.75±0.10
5.5±0.05
P0 P1 P2 D0 D1 T A0 B0 K0
SOP-8
4.0±0.10
8.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.5 MIN.
0.6+0.00
-0.40
6.40±0.20
5.20±0.20
2.10±0.20
(mm)
Carrier Tape & Reel Dimensions
H
T1
A
d
A
E1
A
B
W
F
T
P0
OD0
BA0
P2
K0
B0
SECTION B-B
SECTION A-A
OD1
P1
Devices Per Unit
Package Type Unit Quantity
SOP-8 Tape & Reel 2500
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw10
APM8005K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Classification Profile
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw11
APM8005K
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
Average ramp-up rate
(Tsmax to TP) 3 °C/second max. 3°C/second max.
Liquidous temperature (TL)
Time at liquidous (tL) 183 °C
60-150 seconds 217 °C
60-150 seconds
Peak package body Temperature
(Tp)* See Classification Temp in table 1 See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc) 20** seconds 30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Classification Reflow Profiles
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
350-2000 Volume mm3
>2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness Volume mm3
<350 Volume mm3
≥350
<2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C
Reliability Test Program
Test item Method Description
SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C
PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -65°C~150°C
Copyright ANPEC Electronics Corp.
Rev. A.1 - Dec., 2009 www.anpec.com.tw12
APM8005K
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
