APTGF180H60G Full - bridge NPT IGBT Power Module VBUS Q1 Q3 G1 G3 E1 E3 OUT1 OUT2 Q2 Q4 G2 G4 E2 E4 0/VBUS VCES = 600V IC = 180A @ Tc = 80C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25C Max ratings 600 220 180 630 20 833 Tj = 150C 400A @ 600V Tc = 25C Tc = 80C Tc = 25C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTGF180H60G - Rev 3 October, 2012 Symbol VCES APTGF180H60G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 180A Tj = 125C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 2.0 2.2 3 Max 300 1000 2.5 Unit 5 200 V nA Max Unit A V Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time VGS = 15V VBus = 300V IC = 180A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 VGE = 15V Tj = 125C VBus = 400V IC = 180A Tj = 125C RG = 2.5 Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Typ 8.6 0.94 0.8 660 580 400 26 25 150 nF nC ns 30 26 25 170 ns 40 8.6 mJ 7 Reverse diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=600V IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/s www.microsemi.com Min 600 Tj = 25C Tj = 125C Tc = 80C Typ Max 350 750 Tj = 125C 200 1.6 1.9 1.4 Tj = 25C 180 Tj = 125C 220 Tj = 25C 780 Tj = 125C 2900 Unit V A A 1.8 V ns nC 2-7 APTGF180H60G - Rev 3 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGF180H60G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Typ Max 0.15 0.32 Unit C/W V 150 125 100 5 3.5 300 C N.m g SP6 Package outline (dimensions in mm) www.microsemi.com 3-7 APTGF180H60G - Rev 3 October, 2012 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF180H60G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 600 250s Pulse Test < 0.5% Duty cycle 500 TJ=-55C TJ=25C Ic, Collector Current (A) 400 300 TJ=125C 200 100 0 250s Pulse Test < 0.5% Duty cycle 500 400 TJ=25C 300 200 TJ=125C 100 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 500 400 300 200 TJ=125C 100 TJ=25C TJ=-55C 0 VCE, Collector to Emitter Voltage (V) 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=360A 5 4 3 Ic=180A 2 Ic=90A 1 0 6 8 10 12 14 14 VCE=300V 12 10 VCE=480V 8 6 4 2 0 0 100 200 300 400 500 600 700 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 6 VCE=120V IC = 180A TJ = 25C 16 10 8 7 4 Gate Charge 18 250s Pulse Test < 0.5% Duty cycle VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 600 On state Voltage vs Junction Temperature 4 3.5 Ic=360A 3 2.5 Ic=180A 2 1.5 Ic=90A 1 0.5 250s Pulse Test < 0.5% Duty cycle VGE = 15V 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (C) 125 DC Collector Current vs Case Temperature 300 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) www.microsemi.com 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) 4-7 APTGF180H60G - Rev 3 October, 2012 Ic, Collector Current (A) 600 APTGF180H60G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25C VCE = 400V RG = 2.5 20 15 50 100 150 200 250 250 200 VGE=15V, TJ=125C 150 100 50 300 50 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, TJ=125C 20 250 300 60 TJ = 125C 40 20 TJ = 25C 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) 50 300 Turn-On Energy Loss vs Collector Current 12 VCE = 400V RG = 2.5 12 Eoff, Turn-off Energy Loss (mJ) 16 Eon, Turn-On Energy Loss (mJ) 200 VCE = 400V, VGE = 15V, RG = 2.5 tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 2.5 0 TJ=125C, VGE=15V 8 TJ=25C, VGE=15V 4 0 50 100 150 200 250 VCE = 400V VGE = 15V RG = 2.5 10 24 Eon, 360A Eoff, 360A Eoff, 180A 16 Eon, 180A Eoff, 90A 8 Eon, 90A 0 0 5 10 15 20 Gate Resistance (Ohms) 25 www.microsemi.com TJ = 125C 8 6 TJ = 25C 4 2 50 100 150 200 250 ICE, Collector to Emitter Current (A) 300 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125C 300 0 300 Switching Energy Losses vs Gate Resistance 32 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) Switching Energy Losses (mJ) 150 Current Fall Time vs Collector Current 80 40 100 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25C VCE = 400V RG = 2.5 20 VCE = 400V VGE = 15V RG = 2.5 16 Eon, 360A Eoff, 360A 12 Eon, 180A 8 Eoff, 180A 4 Eon, 90A Eoff, 90A 0 0 25 50 75 100 125 TJ, Junction Temperature (C) 5-7 APTGF180H60G - Rev 3 October, 2012 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF180H60G Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 450 IC, Collector Current (A) C, Capacitance (pF) 100000 Cies 10000 Coes 1000 Cres 100 400 350 300 250 200 150 100 50 0 0 10 20 30 40 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.08 0.06 0.9 0.7 0.5 0.3 0.04 0.02 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 180 10 Operating Frequency vs Collector Current 150 120 ZCS VCE = 400V D = 50% RG = 2.5 TJ = 125C Tc=75C 90 60 ZVS 30 Hard switching 0 40 www.microsemi.com 1 80 120 160 200 IC, Collector Current (A) 240 6-7 APTGF180H60G - Rev 3 October, 2012 0.14 Fmax, Operating Frequency (kHz) Thermal Impedance (C/W) 0.16 APTGF180H60G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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