SDA-2000 SDA-2000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD's SDA-2000 is a directly coupled (DC) GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier die designed to support a wide array of high frequency commercial, military, and space applications. They are ideal for wideband amplifier gain blocks, modulators, clock drivers, broadband automated test equipment (ATE), military, and aerospace applications. GaAs HBT VTO SiGe BiCMOS Output Voltage to 8VPP Gain=12dB Typical Noise Figure=5.5 dB Typical 410mA Total Current 4 Drive for Single-Ended (SE) MZM NRZ, DPSK, ODB, RZ 2 Si BiCMOS RFOUT 3 InGaP HBT DC to 22GHz Operation Applications Optimum Technology Matching(R) Applied GaAs MESFET VG2 SiGe HBT RFIN GaAs pHEMT 1 Si CMOS VTI 6 7 VG21 VCAS Clock Driver for RZ and CS Pulse Carver Broadband ATE 5 Si BJT GaN HEMT InP HBT Military Aerospace RF MEMS LDMOS Parameter Min. Specification Typ. Max. Unit Electrical Specifications Operating Frequency DC Gain 12 Output Voltage 8 OIP3 at Mid-Band 38 P1dB at Mid- Band 24 Noise Figure at Mid-Band 6.0 Input Return Loss 20 Output Return Loss 17.5 Supply Current 410 Supply Voltage 8.0 *Adjust VTI between -2.0VDC to 0VDC to achieve IDD =410mA typical. 22 GHz dB VP-P dBm dBm dB dB Condition TA =+25C, VDD =+8V, VG2 =+3.5VDC, IDD =410mA* 3dB BW 10GHz 10GHz 10GHz 10GHz mA VDC RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. DS110126 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 8 SDA-2000 Absolute Maximum Ratings Parameter Drain Bias Voltage (VDD) Rating Unit +9.0 VDC Gate Bias Voltage (VTI) -2 to +1 VDC Gate Bias Voltage (VG2) (VDD -8.0) to VDD VDC RF Input Power (VDD =+7.0VDC) Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). dBm Operating Junction Temperature (TJ) +175 C Continuous Power Dissipation (T=+85C) 5 W Thermal Resistance (Pad to Die Bottom) 17 C/W Storage Temperature -40 to +150 C Operating Temperature -40 to +85 C ESD JESD22-A114 Human Body Model (HBM) The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Class 0 (All Pads) Typical Electrical Performance (See section at the end of the data sheet for measurement comments) Data Set for VDD =5.0V, VG2 =2.2V S12 versus Frequency S11 versus Frequency 0 0 -5 -10 -10 -20 -20 -40C -25 25C -30 85C S12 (dB) S11 (dB) -15 -35 -30 -40C -40 25C -50 85C -60 -40 -70 -45 -50 -80 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 Frequency (GHz) S21 versus Frequency 16 0 14 -5 16 18 20 22 24 26 -10 10 -40C 8 25C 6 85C S22 dB S21 (dB) 12 14 S22 versus Frequency 12 -15 -40C -20 25C -25 85C 4 -30 2 -35 -40 0 0 2 4 6 8 10 12 14 16 Frequency (GHz) 2 of 8 10 Frequency (GHz) 18 20 22 24 26 0 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency (GHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110126 SDA-2000 P1dB versus Frequency OIP3 vs Frequency @ Pout = 5 dBm /tone (1.3 MHz tone spacing) 30 50 45 40 35 20 IP3 (dBm) P1dB (dB) 25 25C 15 -40C 85C 10 30 25c 25 -40c 20 85c 15 10 5 5 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 24 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) Frequency (GHz) NF verses Frequency 16 14 NF (dB) 12 10 25C 8 -40c 6 85C 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency (GHz) DS110126 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 8 SDA-2000 Die Drawing 1. 2. 3. 4. 5. 6. 7. All dimensions in microns No connection required for unlabeled bond pads Die thickness is 0.102mm (4 MIL) Typical bond pad is 0.100mm square Backside metallization: gold Backside metal is ground Bond pad metallization: gold 4 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110126 SDA-2000 Pin 1 Function RFIN 2 VG2 3 4 VTO RFOUT and VDD Description Interface Schematic RF Input. This pad is DC coupled and matched to 50 from DC to 22GHz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. A DC blocking capacitor is required for this connection. The calue of this capacitor will be based on the desired frequency range of application. Each amplifier stage in the SDA-2OOO is a cascade configuration. The gate of each upper FET in the cascade amplifiers is biased with the 3.5VDC (for VDD =8V). The DC connection for the upper device gates runs across the length of the die. Pads 2 and 5 are both on this DC connection but are on opposite ends of the die. The VG2 connection can therefore be placed on either pad. A bypass capacitor is recommended on both ends, pads 2 and 5. The output drain termination pad. This pad requires a 1000pF bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for RF input and output. Connect the DC bias (VDD) network to provide drain current (IDD). Note: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network. RFIN 1000 pF 1000 pF RFOUT 1000 pF VDD RFOUT Note: Drain Bias (VDD) must be applied through a broadband bias tee or external bias network 5 6 7 Die VCAS VG21 VTI GND Each amplifier stage in the SDA-2OOO is a cascade configuration. The gate of each upper FET in the cascade amplifiers is biased with the 3.5VDC (for VDD =8V). The DC connection for the upper device gates runs across the length of the die. Pads 2 and 5 are both on this DC connection but are on opposite ends of the die. The VG2 connection can therefore be placed on either pad. A bypass capacitor is recommended on both ends, pads 2 and 5. Not connected. Input gate voltage for the lower devices in the cascade amplifier. This pad also serves as the RF ground for the input termination resistor. The DC voltage applied to this pad will be between -2.0VDC (device is pinched OFF) to 0VDC (fully ON). The value of this capacitor will effect the low frequency response of the amplifier. Ground connection. Connect die bottom directly to ground plane for best performance. NOTE: The die should be connected directly to the ground plane with conductive epoxy. 1000 pF 1000 pF Bias Sequence (turn device on): * VTI - Apply negative -2.0 volts. (This shuts the device off.) * VG2 - Apply positive 3.5 volts. * VDD - Apply positive 8.0 volts to the RF output bias tee. * Important - Adjust VTI between -2 to +1.0 volts to achieve IDD=410mA nominal. Bias Sequence (turn device off): * VTI - Return to negative -2.0 volts. * VDD - Remove positive 8.0 volts to the RF output bias tee. * VG2 - Remove positive 3.5 volts. DS110126 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 8 SDA-2000 Assembly Diagram Application Circuit Schematic 1000pF VTO VG2 2 VDD 3 1000pF 1 RFIN 7 5 6 4 RFOUT 1000pF 1000pF NOTE VG2 (optional) VTI NOTE: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network. SDA-2000 Product Image 6 of 8 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110126 SDA-2000 DS110126 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 8 SDA-2000 Measurement Technique All data presented in this document represents the integrated circuit and accompanying bond wires. All performance data reported in this document were measured in the following manner. Data was taken using a temperature controlled probe station utilizing 150m pitch GSG probes. The interface between the probes and integrated circuit was made with a coplanar to microstrip ceramic test interface. The test interface was wire bonded to the die using 1mil diameter bondwires. The spacing between the test interface and the die was 200m, and the bond wire loop height was 100m. The calibration of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment to the ceramic interface. Ordering Information 8 of 8 Part Number Description Delivery Method Die/GelPak SDA-2000 SDA-2000SB GaAs Distributed Amplifier, 22GHz Sample Bag, GaAs Distributed Amplifier, 22GHz GelPak GelPak 10 or more 2 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS110126