SDA-2000 - RF Micro Devices, Inc. (RFMD)

Features

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

InP HBT

LDMOS

RF MEMS

SDA-2000

GaAs DISTRIBUTED AMPLIFIER

RFMD’s SDA-2000 is a directly coupled (DC) GaAs microwave monolithic

integrated circuit (MMIC) distributed driver amplifier die designed to sup-

port a wide array of high frequency commercial, military, and space appli-

cations. They are ideal for wideband amplifier gain blocks, modulators,

clock drivers, broadband automated test equipment (ATE), military, and

aerospace applications.

RFIN

RFOUT

VG2

VTI

VTO

VG21

VCAS

DC to 22GHz Operation

Output Voltage to 8VPP

Gain=12dB Typical

Noise Figure=5.5 dB Typical

410 mA Total Current

Applications

Drive for Single-Ended (SE) MZM

NRZ, DPSK, ODB, RZ

Clock Driver for RZ and CS Pulse

Carver

Broadband ATE



Military

Aerospace

DS110126



Die: 3.1mmx1.45mmx0.102mm

SDA-2000

GaAs Distrib -

uted Amplifier

Parameter Specification Unit Condition

Min. Typ. Max.

Electrical Specifications TA=+25°C, VDD= +8V, VG2= +3.5VDC,

IDD=410mA*

Operating Frequency DC 22 GHz 3dB BW

Gain 12 dB 10GHz

Output Voltage 8 VP-P

OIP3 at Mid-Band 38 dBm 10GHz

P1dB at Mid- Band 24 dBm 10GHz

Noise Figure at Mid-Band 6.0 dB 10GHz

Input Return Loss 20 dB

Output Return Loss 17.5

Supply Current 410 mA

Supply Voltage 8.0 VDC

*Adjust VTI between -2.0VDC to 0VDC to achieve IDD=410mA typical.

2 of 8 DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

Typical Electrical Performance

(See section at the end of the data sheet for measurement comments)

Data Set for VDD =5.0V, VG2=2.2V

Absolute Maximum Ratings

Parameter Rating Unit

Drain Bias Voltage (VDD)+9.0V

Gate Bias Voltage (VTI) -2 to +1 VDC

Gate Bias Voltage (VG2)(V

DD- 8.0) to VDD VDC

RF Input Power (VDD=+7.0VDC)dBm

Operating Junction Temperature (TJ)+175 °C

Continuous Power Dissipation

(T=+85°C) 5W

Thermal Resistance (Pad to Die Bot-

tom) 17 °C/W

Storage Temperature -40 to +150 °C

Operating Temperature -40 to +85 °C

ESD JESD22-A114 Human Body

Model (HBM) Class 0 (All Pads)

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

S11 versus Frequency

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

02468101214161820222426

Fr e q ue ncy ( GHz)

S11 (dB)

-40C

25C

85C

S21 versus Frequency

0 2 4 6 8 10121416 1820 2224 26

Fr e q ue ncy ( GHz )

S21 (dB)

-40C

25C

85C

S12 versus Frequency

-80

-70

-60

-50

-40

-30

-20

-10

0 2 4 6 8 101214161820222426

Frequency (GHz)

S12 (dB)

-40C

25C

85C

S22 versus Frequency

-40

-35

-30

-25

-20

-15

-10

-5

0 2 4 6 8 101214161820222426

Frequency (GHz)

S22 dB

-40C

25C

85C

3 of 8DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

P1dB versus Frequency

0 2 4 6 8 1012141618202224

Frequency (GHz)

P1dB (dB)

25C

-40 C

85C

OIP3 vs Frequency

@ Pout = 5 dBm/tone (1.3 MHz tone spacing)

024681012141618202224

Frequency (GHz)

IP3 (dBm)

25c

-40c

85c

NF verses Frequency

024681012141618202224

Frequency (GHz)

NF (dB)

25C

-40c

85C

4 of 8 DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

Die Drawing

1. All dimensions in microns

2. No connection required for unlabeled bond pads

3. Die thickness is 0.102mm (4 MIL)

4. Typical bond pad is 0.100mm square

5. Backside metallization: gold

6. Backside metal is ground

7. Bond pad metallization: gold

5 of 8DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

Bias Sequence (turn device on):

• VTI - Apply negative -2.0 volts. (This shuts the device off.)

• VG2 - Apply positive 3.5 volts.

• VDD - Apply positive 8.0 volts to the RF output bias tee.

• Important - Adjust VTI between -2 to +1.0 volts to achieve IDD=410mA nominal.

Bias Sequence (turn device off):

• VTI - Return to negative -2.0 volts.

• VDD - Remove positive 8.0 volts to the RF output bias tee.

• VG2 - Remove positive 3.5 volts.

Pin Function Description Interface Schematic

1RFIN

RF Input. This pad is DC coupled and matched to 50 from DC to 22GHz. 50

microstrip transmission line on 0.127mm (5mil) thick alumina thin film sub-

strate is recommended for RF input and output. A DC blocking capacitor is

required for this connection. The calue of this capacitor will be based on the

desired frequency range of application.

2VG2

Each amplifier stage in the SDA-2OOO is a cascade configuration. The gate of

each upper FET in the cascade amplifiers is biased with the 3.5VDC (for

VDD=8V). The DC connection for the upper device gates runs across the length

of the die. Pads 2 and 5 are both on this DC connection but are on opposite ends

of the die. The VG2 connection can therefore be placed on either pad. A bypass

capacitor is recommended on both ends, pads 2 and 5.

3VTO

The output drain termination pad. This pad requires a 1000pF bypass capacitor

with the shortest wirebond length to prevent low frequency gain ripple.

4RFOUT and

VDD

RF Output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina

thin film substrate is recommended for RF input and output. Connect the DC bias

(VDD) network to provide drain current (IDD).

Note: Drain Bias (VDD) must be applied through a broadband bias tee or external

bias network.

5VCAS

Each amplifier stage in the SDA-2OOO is a cascade configuration. The gate of

each upper FET in the cascade amplifiers is biased with the 3.5VDC (for

VDD=8V). The DC connection for the upper device gates runs across the length

of the die. Pads 2 and 5 are both on this DC connection but are on opposite ends

of the die. The VG2 connection can therefore be placed on either pad. A bypass

capacitor is recommended on both ends, pads 2 and 5.

6VG21

Not connected.

7VTI

Input gate voltage for the lower devices in the cascade amplifier. This pad also

serves as the RF ground for the input termination resistor. The DC voltage

applied to this pad will be between -2.0VDC (device is pinched OFF) to 0VDC (fully

ON). The value of this capacitor will effect the low frequency response of the

amplifier.

Die GND Ground connection. Connect die bottom directly to ground plane for best perfor-

mance. NOTE: The die should be connected directly to the ground plane with con-

ductive epoxy.

RFIN

1000 pF

RFOUT

VDD

Note: Drain Bias (VDD) must be applied

through a broadband bias tee or

external bias network

1000 pF

6 of 8 DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

Assembly Diagram

Application Circuit Schematic

SDA-2000 Product Image

RFIN

VG2

1000pF

4RFOUT

VDD

NOTE

NOTE: Drain Bias (Vdd) must be applied through a broadband bias tee or

external bias network.

1000pF

VTO

VTI

VG2 (optional)

7 of 8DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

8 of 8 DS110126

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SDA-2000

Measurement Technique

All data presented in this document represents the integrated circuit and accompanying bond wires.

All performance data reported in this document were measured in the following manner. Data was taken using a temperature

controlled probe station utilizing 150μm pitch GSG probes. The interface between the probes and integrated circuit was made

with a coplanar to microstrip ceramic test interface. The test interface was wire bonded to the die using 1mil diameter bond-

wires. The spacing between the test interface and the die was 200μm, and the bond wire loop height was 100μm. The calibra-

tion of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of

bond wire attachment to the ceramic interface.

Ordering Information

Part Number Description Delivery Method Die/GelPak

SDA-2000 GaAs Distributed Amplifier, 22GHz GelPak 10 or more

SDA-2000SB Sample Bag, GaAs Distributed Amplifier, 22GHz GelPak 2