PMBTA92 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of September 1994

File under Discrete Semiconductors, SC04

1997 Jul 03

DISCRETE SEMICONDUCTORS

PMBTA92; PMBTA93

PNP high-voltage transistors

ook, halfpage

M3D088

1997 Jul 03 2

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

FEATURES

•Low current (max. 100 mA)

•High voltage (max. 300 V).

APPLICATIONS

•Telephony

•Professional communication equipment.

DESCRIPTION

PNP high-voltage transistor in a SOT23 plastic package.

NPN complements: PMBTA42 and PMBTA43.

PINNING

PIN DESCRIPTION

1 base

2 emitter

3 collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

MAM256

Top view

MARKING

TYPE NUMBER MARKING CODE

PMBTA92 p2D

PMBTA93 p2E

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

PMBTA92 −−300 V

PMBTA93 −−200 V

VCEO collector-emitter voltage open base

PMBTA92 −−300 V

PMBTA93 −−200 V

ICM peak collector current −−200 mA

Ptot total power dissipation Tamb ≤25 °C−250 mW

hFE DC current gain IC=−10 mA; VCE =−10 V 40 −

fTtransition frequency IC=−10 mA; VCE =−20 V; f = 100 MHz 50 −MHz

1997 Jul 03 3

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

PMBTA92 −−300 V

PMBTA93 −−200 V

VCEO collector-emitter voltage open base

PMBTA92 −−300 V

PMBTA93 −−200 V

VEBO emitter-base voltage open collector −−5V

Ccollector current (DC) −−100 mA

ICM peak collector current −−200 mA

IBM peak base current −−100 mA

Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

1997 Jul 03 4

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current IE= 0; VCB =−200 V

PMBTA92 −−250 nA

ICBO collector cut-off current IE= 0; VCB =−160 V

PMBTA93 −−250 nA

IEBO emitter cut-off current IC= 0; VEB =−3V −−100 nA

hFE DC current gain VCE =−10 V; note 1

IC=−1 mA; 25 −

IC=−10 mA 40 −

IC=−30 mA 25 −

VCEsat collector-emitter saturation voltage IC=−20 mA; IB=−2mA −−500 mV

VBEsat base-emitter saturation voltage IC=−20 mA; IB=−2mA −−900 mV

Cccollector capacitance IE=i

e= 0; VCB =−20 V; f = 1 MHz

PMBTA92 −6pF

PMBTA93 −8pF

1997 Jul 03 5

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT23

1997 Jul 03 6

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1997 Jul 03 7

Philips Semiconductors Product speciﬁcation

PNP high-voltage transistors PMBTA92; PMBTA93

NOTES

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Printed in The Netherlands 117047/00/02/pp8 Date of release: 1997 Jul 03 Document order number: 9397 750 02319