Microsemi
RF Products Divisi on
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 1
Copyright 2000
MSC1610.PDF 2000-11-06
WWW.Microsemi .COM
MS1077
RF & MICROWAVE TRANSISTORS
PR
O
D
UC
T PREVIEW
RF PRODUCTS DIVISION
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS1077 is a Class AB epitaxial silicon NPN planar transistor
designed primarily for SSB communications. This device utilizes
emitter ballasting to achieve extreme ruggedness under severe
operating conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
!"
Optimiz ed for SSB
!"
30 MHz
!"
28 Volts
!"
IMD –30dB
!"
Common Emitter
!"
Gold Metallization
!"
POUT = 130 W PEP
!"
GP = 12 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
!"
HF SSB Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°
°°
°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 70 V
VCEO Collector-Emitter Voltage 35 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 12 A
PDISS Power Dissipation 175 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature -65 to +150 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 1.0 °C/W
M
MS
S1
10
07
77
7
Microsemi
RF Products Divisi on
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page 2
Copyright 2000
MSC1610.PDF 2000-11-06
WWW.Microsemi .COM
MS1077
RF & MICROWAVE TRANSISTORS
PR
O
D
UC
T PREVIEW
RF PRODUCTS DIVISION
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
MS1077
Symbol Test Conditions Min. Typ. Max.
Units
BVCES IC = 50 mA VBE = 0 V 70 V
BVCEO IC = 100 mA IB = 0 mA 35 V
BVEBO IE = 20 mA IC = 0 mA 4.0 V
ICES VCE =35 V IE = 0 mA 20 mA
hFE VCE = 5 V IC = 7 A 18 50
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C
MS1077
Symbol Test Conditions Min. Typ. Max.
Units
POUT f = 30 MHz VCE = 28 V ICQ = 150 mA 130 W
GP POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 12 dB
IMD * POUT = 130 W PEP VCE = 28 V ICQ = 150 mA -30 dBc
ηC POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 37 %
COB f = 1 MHz VCB = 28 V 220 260 pF
Note: * f1 = 30.00 MHz, f2 = 30.01 MHz
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
Microsemi
RF Products Divisi on
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page
3
Copyright 2000
MSC1610.PDF 2000-11-06
WWW.Microsemi .COM
MS1077
RF & MICROWAVE TRANSISTORS
PR
O
D
UC
T PREVIEW
RF PRODUCTS DIVISION
P
PA
AC
CK
KA
AG
GE
E
D
DA
AT
TT
TA
A
Microsemi
RF Products Divisi on
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
Page
4
Copyright 2000
MSC1610.PDF 2000-11-06
WWW.Microsemi .COM
MS1077
RF & MICROWAVE TRANSISTORS
PR
O
D
UC
T PREVIEW
RF PRODUCTS DIVISION
N
NO
OT
TE
ES
S
