This product complies with the RoHS Directive (EU 2002/95/EC). DME50501 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification DME20501 in SMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SMini6-F3-B Pin Name 1: Emitter (Tr1) 2: Base (Tr2) 3: Base (Tr2) Basic Part Number DSA2001 + DSC2001 (Individual) Marking Symbol: B1 Packaging Internal Connection Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) (C1) 6 Absolute Maximum Ratings Ta = 25C Parameter Tr1 Tr2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V Collector-emitter voltage (Base open) VCEO -50 V Emitter-base voltage (Collector open) VEBO -7 V Collector current IC -100 mA Peak collector current ICP -200 mA Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Tj 150 C Tstg -55 to +150 C Overall Junction temperature Storage temperature Publication date: April 2010 4: Collector (Tr2) 5: Emitter (Tr2) 6: Collector (Tr1) ZJJ00744AED (E2) 5 Tr2 Tr1 1 (E1) (C2) 4 2 (B1) 3 (B2) 1 This product complies with the RoHS Directive (EU 2002/95/EC). DME50501 Electrical Characteristics Ta = 25C3C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 A, IE = 0 -60 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 -7 V Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0 - 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB = 0 -100 A Forward current transfer ratio hFE VCE = -10 V, IC = -2 mA 460 - 0.5 V Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 210 IC = -100 mA, IB = -10 mA - 0.2 VCE = -10 V, IC = -2 mA 150 MHz 2 pF VCB = -10 V, IE = 0, f = 1 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 A, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 A Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 A Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 460 0.3 V Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 210 IC = 100 mA, IB = 10 mA 0.13 VCE = 10 V, IC = 2 mA 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart DME50501_PT-Ta PT Ta Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 200 Ambient temperature Ta (C) 2 ZJJ00744AED This product complies with the RoHS Directive (EU 2002/95/EC). DME50501 Characteristics charts of Tr1 DME50501(Tr1)_IC-VCE DME50501(Tr1)_hFE-IC -120 -80 -400 A -300 A -60 -200 A -40 -100 A -20 -2 -4 -6 -8 -10 500 400 Ta = 85C 300 25C 200 100 0 - 0.1 -12 Collector-emitter voltage VCE (V) Collector current IC (mA) -80 -30C -60 -40 -20 - 0.4 - 0.8 -1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) 25C Ta = 85C 0 -10 2.0 1.0 0 -1 -10 150 A 100 A 50 A 4 6 8 10 12 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE Collector current IC (mA) 200 A 2 50 Ta = 85C 25C 300 -30C 200 100 0 0.1 1 10 Collector current IC (mA) ZJJ00744AED -10 -100 VCE(sat) IC 500 400 -1 Collector current IC (mA) DME50501(Tr2)_VCEsat-IC VCE = 10 V IB = 250 A 0 100 0 - 0.1 -100 600 20 150 hFE IC 100 -100 VCE = -10 V Ta = 25C 200 DME50501(Tr2)_hFE-IC Ta = 25C -10 250 Collector-base voltage VCB (V) 120 40 -1 DME50501(Tr1)_fT-IC 3.0 IC VCE 60 - 0.01 - 0.1 Collector current IC (mA) IE = 0 f = 1 MHz Ta = 25C Characteristics charts of Tr2 DME50501(Tr2)_IC-VCE 0 -100 -30C fT IC 4.0 Base-emitter voltage VBE (V) 80 Ta = 85C 25C Cob VCB -120 0 -1 DME50501(Tr1)_Cob-VCB IC VBE -100 IC / IB = 10 Collector current IC (mA) DME50501(Tr1)_IC-VBE VCE = -10 V -1 -10 - 0.1 -30C Transition frequency fT (MHz) 0 VCE = -10 V 100 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -500 A Forward current transfer ratio hFE IB = -600 A -100 0 VCE(sat) IC 600 Ta = 25C DME50501(Tr1)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 10 IC / IB = 10 1 0.1 0.01 0.1 Ta = 85C -30C 25C 1 10 100 Collector current IC (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). DME50501 DME50501(Tr2)_IC-VBE DME50501(Tr2)_Cob-VCB 25C Collector current IC (mA) 100 Ta = 85C 80 -30C 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) 4 1.2 fT IC 250 VCE = 10 V Ta = 25C 4.0 Transition frequency fT (MHz) 120 VCE = 10 V DME50501(Tr2)_fT-IC Cob VCB Collector output capacitance (Common base, input open circuited) Cob (pF) IC VBE 3.0 2.0 1.0 0 1 10 100 Collector-base voltage VCB (V) ZJJ00744AED 200 150 100 50 0 0.1 1 10 Collector current IC (mA) 100 This product complies with the RoHS Directive (EU 2002/95/EC). DME50501 SMini6-F3-B Unit: mm 2.0 0.1 1.3 0.1 (0.65) 4 1 2 3 7 (0.425) 5 1.25 0.10 6 2.1 0.1 (0.65) 0.20 0.05 +0.05 0.13 -0.02 (0.15) 0 to 0.10 0.7 0.1 7 ZJJ00744AED 5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. 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